Device incorporating an IR signal transmissive region

    公开(公告)号:US12113279B2

    公开(公告)日:2024-10-08

    申请号:US17767858

    申请日:2021-09-22

    IPC分类号: H01Q17/00 G06F3/044

    CPC分类号: H01Q17/004 G06F3/0445

    摘要: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.

    Opto-electronic device including an auxiliary electrode and a partition

    公开(公告)号:US11744101B2

    公开(公告)日:2023-08-29

    申请号:US17949162

    申请日:2022-09-20

    摘要: An opto-electronic device having a plurality of layers, comprising a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof. In the first portion, the device comprises a first electrode, a second electrode and a semiconducting layer between them. The second electrode lies between the NIC and the semiconducting layer in the first portion. In the second portion, a conductive coating is disposed on a second layer surface. The first portion is substantially devoid of the conductive coating. The conductive coating is electrically coupled to the second electrode and to a third electrode in a sheltered region of a partition in the device.