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    OPTO-ELECTRONIC DEVICE WITH NANOPARTICLE DEPOSITED LAYERS
    1.
    发明公开
    OPTO-ELECTRONIC DEVICE WITH NANOPARTICLE DEPOSITED LAYERS 审中-公开

    公开(公告)号：US20230413603A1

    公开(公告)日：2023-12-21

    申请号：US18034577

    申请日：2021-09-29

    申请人： OTI LUMIONICS INC.

    发明人： Michael HELANDER ,  Zhibin WANG ,  Yi-Lu CHANG ,  Qi WANG

    IPC分类号： H10K50/86 ,  H10K71/00

    CPC分类号： H10K50/86 ,  H10K71/621

    摘要： A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.

    OPTO-ELECTRONIC DEVICE INCLUDING PATTERNED EM RADIATION-ABSORBING LAYER
    5.
    发明公开
    OPTO-ELECTRONIC DEVICE INCLUDING PATTERNED EM RADIATION-ABSORBING LAYER 审中-公开

    公开(公告)号：US20240065082A1

    公开(公告)日：2024-02-22

    申请号：US18468641

    申请日：2023-09-15

    申请人： OTI Lumionics, Inc.

    发明人： Zhibin WANG ,  Qi WANG ,  Yi-Lu CHANG ,  Michael HELANDER

    IPC分类号： H10K59/80 ,  H10K59/12

    CPC分类号： H10K59/8792 ,  H10K59/1201 ,  H10K2102/331

    摘要： A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.

    DEVICE INCLUDING A LOW-INDEX COATING AND A RADIATION-MODIFYING LAYER
    6.
    发明公开
    DEVICE INCLUDING A LOW-INDEX COATING AND A RADIATION-MODIFYING LAYER 审中-公开

    公开(公告)号：US20230413649A1

    公开(公告)日：2023-12-21

    申请号：US18030984

    申请日：2021-10-11

    申请人： OTI LUMIONICS INC.

    发明人： Michael HELANDER ,  Zhibin WANG ,  Yi-Lu CHANG ,  Qi WANG ,  Yingjie Zhang

    IPC分类号： H10K59/80

    CPC分类号： H10K59/879 ,  H10K59/12

    摘要： A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one low(er)-index coating disposed on a first layer surface and at least one EM radiation-modifying layer embedded within the at least one low(er)-index coating and comprising at least one particle structure comprising a deposited material. Embedding the at least one particle structure of the at least one EM radiation-modifying layer within the at least one low(er)-index coating modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing at least partially therethrough at a non-zero angle relative to the lateral aspect therein in at least a part of the EM spectrum. A lower part comprising a first at least one low(er)-index coating may be disposed between the first layer surface and the at least one EM radiation-modifying layer and a second part comprising a second at least one low(er)-index coating may be disposed on the at least one EM radiation-modifying layer.

    NUCLEATION-INHIBITING COATING CONTAINING RARE EARTH COMPOUNDS AND DEVICES INCORPORATING SAME
    7.
    发明公开
    NUCLEATION-INHIBITING COATING CONTAINING RARE EARTH COMPOUNDS AND DEVICES INCORPORATING SAME 审中-公开

    公开(公告)号：US20230354677A1

    公开(公告)日：2023-11-02

    申请号：US17925300

    申请日：2021-05-17

    申请人： OTI LUMIONICS, INC.

    发明人： Yi-Lu CHANG ,  Qi WANG ,  Zhibin WANG ,  Michael HELANDER

    IPC分类号： H10K59/80 ,  C01F17/224 ,  C01F5/02 ,  H10K59/12

    CPC分类号： H10K59/80523 ,  C01F17/224 ,  C01F5/02 ,  H10K59/12

    摘要： A device having a plurality of layers comprises a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second layer surface, wherein an initial sticking probability against deposition of the deposited layer onto a surface of the NIC in the first portion is substantially less than the initial sticking probability against deposition of the deposited layer onto the second layer surface, such that the NIC is substantially devoid of a closed coating of the deposited material and wherein the NIC comprises a compound containing a rare earth element. The deposited layer can comprise a closed coating on the second layer surface in a second portion of the lateral aspect, and/or a discontinuous layer of at least one particle structure on a surface of the NIC.

    COMPOUNDS FOR FORMING A PATTERNING COATING AND DEVICES INCORPORATING SAME
    8.
    发明公开
    COMPOUNDS FOR FORMING A PATTERNING COATING AND DEVICES INCORPORATING SAME 审中-公开

    公开(公告)号：US20230240128A1

    公开(公告)日：2023-07-27

    申请号：US18001461

    申请日：2021-06-14

    申请人： OTI LUMIONICS INC.

    发明人： Michael HELANDER ,  Scott Nicholas GENIN ,  Zhibin WANG ,  Qi WANG ,  Yi-Lu CHANG

    IPC分类号： H10K85/10 ,  C07F9/6593 ,  C07F9/6581 ,  H01L33/44 ,  H10K71/10

    CPC分类号： H10K85/111 ,  C07F9/65815 ,  C07F9/65817 ,  C07F9/65818 ,  H01L33/44 ,  H10K71/10

    摘要： A phosphazene derivative compound including a chain moiety including a backbone and an attached fluorine atom and an opto-electronic device including such compound. The chain moiety includes an intermediate moiety, a terminal moiety arranged at a terminal portion of thereof bonded to the intermediate moiety, and/or a core moiety comprising a phosphazene unit attached to the chain moiety, including by a linker moiety of the chain moiety. The chain moiety attaches to the phosphorous atom of the unit and/r comprises a cyclophosphazene comprising a plurality of units. The device has two electrodes and an active region comprising a semiconducting layer bounded longitudinally by the electrodes and laterally confined to an emissive region defined thereby that lacks the compound. A device patterning coating includes the compound in a first lateral portion. The device has a deposited layer of deposited material, but the first portion lacks a closed coating of deposited material.

    OPTO-ELECTRONIC DEVICE INCLUDING AN AUXILIARY ELECTRODE AND A PARTITION
    9.
    发明申请
    OPTO-ELECTRONIC DEVICE INCLUDING AN AUXILIARY ELECTRODE AND A PARTITION 有权

    公开(公告)号：US20230084617A1

    公开(公告)日：2023-03-16

    申请号：US17949162

    申请日：2022-09-20

    申请人： OTI LUMIONICS INC.

    发明人： Zhibin WANG ,  Yi-Lu CHANG ,  Qi WANG

    IPC分类号： H01L51/52 ,  H01L27/32

    摘要： An opto-electronic device having a plurality of layers, comprising a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof. In the first portion, the device comprises a first electrode, a second electrode and a semiconducting layer between them. The second electrode lies between the NIC and the semiconducting layer in the first portion. In the second portion, a conductive coating is disposed on a second layer surface. The first portion is substantially devoid of the conductive coating. The conductive coating is electrically coupled to the second electrode and to a third electrode in a sheltered region of a partition in the device.

    OPTO-ELECTRONIC DEVICE INCLUDING AN AUXILIARY ELECTRODE AND A PARTITION
    10.
    发明申请
    OPTO-ELECTRONIC DEVICE INCLUDING AN AUXILIARY ELECTRODE AND A PARTITION 有权

    公开(公告)号：US20220278299A1

    公开(公告)日：2022-09-01

    申请号：US17634232

    申请日：2020-08-07

    申请人： OTI Lumionics Inc.

    发明人： Zhibin WANG ,  Yi-Lu CHANG ,  Qi WANG

    IPC分类号： H01L51/52 ,  H01L27/32

    摘要： An opto-electronic device having a plurality of layers, comprising a nucleation-inhibiting coating (MC) disposed on a first layer surface in a first portion of a lateral aspect thereof. In the first portion, the device comprises a first electrode, a second electrode and a semiconducting layer between them. The second electrode lies between the NIC and the semiconducting layer in the first portion. In the second portion, a conductive coating is disposed on a second layer surface. The first portion is substantially devoid of the conductive coating. The conductive coating is electrically coupled to the second electrode and to a third electrode in a sheltered region of a partition in the device.