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    METHOD FOR PROVIDING AN AUXILIARY ELECTRODE AND DEVICE INCLUDING AN AUXILIARY ELECTRODE
    1.
    发明公开
    METHOD FOR PROVIDING AN AUXILIARY ELECTRODE AND DEVICE INCLUDING AN AUXILIARY ELECTRODE 审中-公开

    公开(公告)号：US20240260305A1

    公开(公告)日：2024-08-01

    申请号：US18610137

    申请日：2024-03-19

    申请人： OTI Lumionics Inc.

    发明人： Zhibin WANG ,  Michael HELANDER

    IPC分类号： H10K50/824 ,  H10K71/00

    CPC分类号： H10K50/824 ,  H10K71/00

    摘要： An opto-electronic device includes: (i) a substrate having a surface; (ii) a first electrode disposed over the surface; (iii) a semiconducting layer disposed over at least a portion of the first electrode; (iv) a second electrode disposed over the semiconducting layer; (v) a nucleation inhibiting coating disposed over at least a portion of the second electrode; (vi) a patterning structure disposed over the surface, the patterning structure providing a shadowed region between the patterning structure and the second electrode; (vii) an auxiliary electrode disposed over the surface; and (viii) a conductive coating disposed in the shadowed region, the conductive coating electrically connecting the auxiliary electrode and the second electrode.

    OPTO-ELECTRONIC DEVICE WITH NANOPARTICLE DEPOSITED LAYERS
    2.
    发明公开
    OPTO-ELECTRONIC DEVICE WITH NANOPARTICLE DEPOSITED LAYERS 审中-公开

    公开(公告)号：US20230413603A1

    公开(公告)日：2023-12-21

    申请号：US18034577

    申请日：2021-09-29

    申请人： OTI LUMIONICS INC.

    发明人： Michael HELANDER ,  Zhibin WANG ,  Yi-Lu CHANG ,  Qi WANG

    IPC分类号： H10K50/86 ,  H10K71/00

    CPC分类号： H10K50/86 ,  H10K71/621

    摘要： A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.

    PATTERNING A CONDUCITVE DEPOSITED LAYER USING A NUCLEATION INHIBITING COATING AND AN UNDERLYING METALLIC COATING
    4.
    发明公开
    PATTERNING A CONDUCITVE DEPOSITED LAYER USING A NUCLEATION INHIBITING COATING AND AN UNDERLYING METALLIC COATING 审中-公开

    公开(公告)号：US20230345757A1

    公开(公告)日：2023-10-26

    申请号：US18265634

    申请日：2021-12-07

    申请人： OTI Lumionics, Inc.

    发明人： Michael HELANDER ,  Zhibin WANG

    IPC分类号： H10K50/824 ,  H10K71/60

    CPC分类号： H10K50/824 ,  H10K71/60 ,  H10K50/852

    摘要： A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.

    LIGHT EMITTING DEVICE INCLUDING A CAPPING LAYER AND A METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    LIGHT EMITTING DEVICE INCLUDING A CAPPING LAYER AND A METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20230044829A1

    公开(公告)日：2023-02-09

    申请号：US17789127

    申请日：2020-12-24

    申请人： OTI LUMIONICS INC.

    发明人： Michael HELANDER ,  Zhibin WANG

    IPC分类号： H01L51/50 ,  H01L51/52 ,  H01L27/32

    摘要： An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

    OPTO-ELECTRONIC DEVICE WITH NANOPARTICLE DEPOSITED LAYERS
    9.
    发明公开
    OPTO-ELECTRONIC DEVICE WITH NANOPARTICLE DEPOSITED LAYERS 审中-公开

    公开(公告)号：US20240099055A1

    公开(公告)日：2024-03-21

    申请号：US18507486

    申请日：2023-11-13

    申请人： OTI Lumionics Inc.

    发明人： Michael HELANDER ,  Zhibin WANG ,  Yi-Lu CHANG ,  Qi WANG

    IPC分类号： H10K50/86 ,  H10K71/00

    CPC分类号： H10K50/86 ,  H10K71/621

    摘要： A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.