公开(公告)号：US6136678A

公开(公告)日：2000-10-24

申请号：US33422

申请日：1998-03-02

申请人： Olubunmi Adetutu ,  James D. Hayden ,  Chitra Subramanian ,  Archana Redkar ,  Anthony Mark Miscione ,  Mark G. Fernandes

发明人： Olubunmi Adetutu ,  James D. Hayden ,  Chitra Subramanian ,  Archana Redkar ,  Anthony Mark Miscione ,  Mark G. Fernandes

IPC分类号： C23C16/02 ,  H01L21/28 ,  H01L21/321 ,  H01L29/49 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28247 ,  C23C16/0227 ,  H01L21/28061 ,  H01L21/321 ,  H01L29/4933

摘要： A method for processing a conductive layer, such as a doped polysilicon layer (14) of a gate stack, provides a degas step after precleaning to reduce particle count and defectivity. The conductive layer is provided on a substrate (10), e.g., a silicon wafer. The substrate (10) and conductive layer are subjected to an elevated temperature, under a vacuum, whereby certain species are liberated. The substrate having the conductive layer formed thereon is then removed from the chamber, and moved to a second, separate chamber, in which a second conductive layer (20) is deposited. By switching chambers, the liberated species are largely prevented from contributing to particle count at the interface between the conductive layers. Alternatively, the second conductive layer is formed in the same chamber, provided that the liberated species are removed from the chamber prior to deposition of the second conductive layer.

摘要翻译： 用于处理诸如栅叠层的掺杂多晶硅层（14）的导电层的方法在预清洗之后提供脱气步骤以减少颗粒数量和缺陷率。 导电层设置在例如硅晶片的基板（10）上。 在真空下使衬底（10）和导电层经受升高的温度，从而释放某些物质。 然后将其上形成有导电层的衬底从腔室移除，并移动到沉积有第二导电层（20）的第二分离室。 通过切换室，释放的物质被大大地防止在导电层之间的界面处对颗粒计数的贡献。 或者，第二导电层形成在相同的室中，条件是在沉积第二导电层之前将释放的物质从室中除去。