公开(公告)号：US20080108160A1

公开(公告)日：2008-05-08

申请号：US11969088

申请日：2008-01-03

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US20060273326A1

公开(公告)日：2006-12-07

申请号：US11425595

申请日：2006-06-21

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US07439546B2

公开(公告)日：2008-10-21

申请号：US11425595

申请日：2006-06-21

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L27/15 ,  H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

公开(公告)号：US08460958B2

公开(公告)日：2013-06-11

申请号：US13080802

申请日：2011-04-06

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制造的半导体发光器件的制造方法包括由含有In和Ga的第一氮化物III-V化合物半导体，例如InGaN构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US20110183452A1

公开(公告)日：2011-07-28

申请号：US13080802

申请日：2011-04-06

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/44

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制造的半导体发光器件的制造方法包括由含有In和Ga的第一氮化物III-V化合物半导体，例如InGaN构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US07964419B2

公开(公告)日：2011-06-21

申请号：US11969088

申请日：2008-01-03

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/36

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US07339195B2

公开(公告)日：2008-03-04

申请号：US10606176

申请日：2003-06-25

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L27/15 ,  H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US06950451B2

公开(公告)日：2005-09-27

申请号：US10480568

申请日：2002-06-14

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01S3/10 ,  H01S3/082 ,  H01S3/14 ,  H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US07149235B2

公开(公告)日：2006-12-12

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US20050218422A1

公开(公告)日：2005-10-06

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L29/24

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μM while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光器之间的距离B <2 <2> 条纹（42D）和n型电极（52A）不大于150μm。