公开(公告)号：US06950451B2

公开(公告)日：2005-09-27

申请号：US10480568

申请日：2002-06-14

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01S3/10 ,  H01S3/082 ,  H01S3/14 ,  H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US06784010B2

公开(公告)日：2004-08-31

申请号：US10275497

申请日：2002-11-06

申请人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

发明人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The nitride-based semiconductor laser device 10 has a stacked structure comprising a first contacting layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contacting layer 26 and a second electrode 30 which are consecutively stacked, the second cladding layer 24 comprises a lower layer 24A and an upper layer 24B, the first cladding layer 14, the active layer 20 and the lower layer 24A of the second cladding layer have a mesa structure, the upper layer 24B of the second cladding layer and the second contacting layer 26 have a ridge structure, an insulating layer 40 covering at least part of each of both side surfaces of the upper layer 24B of the second cladding layer is formed on the portions of the lower layer 24A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer 42 having substantially the same width as the mesa structure is formed on the top surface of the insulating layer 40 and the top surface of the second electrode 30 such that the metal layer 42 continues from one top surface to the other.

摘要翻译： 氮化物系半导体激光装置10具有包括第一接触层14，第一包层16，有源层20，第二包覆层24，第二接触层26和第二电极30的层叠结构， 第二包覆层24包括下层24A和上层24B，第二包覆层的第一包层14，有源层20和下层24A具有台面结构，第二包层的上层24B 层和第二接触层26具有脊状结构，在第二包层的下层24A的部分上形成有覆盖第二包层的上层24B的两个侧面的至少一部分的至少一部分的绝缘层40 层，这些部分对应于台面结构的顶表面，此外，具有与台面结构基本相同的宽度的金属层42形成在绝缘层1a的顶表面上 yer 40和第二电极30的顶表面，使得金属层42从一个顶表面延伸到另一个顶表面。

公开(公告)号：US06960482B2

公开(公告)日：2005-11-01

申请号：US10184902

申请日：2002-07-01

申请人： Osamu Matsumoto ,  Shinichi Ansai ,  Satoru Kijima

发明人： Osamu Matsumoto ,  Shinichi Ansai ,  Satoru Kijima

IPC分类号： H01L29/43 ,  C30B33/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/324 ,  H01S5/042 ,  H01S5/323 ,  H01L21/00

CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/28575 ,  H01L21/3245

摘要： A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and, hence, the variation in characteristics of the nitride semiconductor.

摘要翻译： 一种制造氮化物半导体的方法包括以下步骤：形成掺杂有p型杂质的氮化物半导体，在含有活性氧的气氛中处理氮化物半导体的表面以除去残留在表面上的碳并在其上形成氧化膜， 并激活p型杂质以使氮化物半导体的导电类型变为p型。 由于去除残留在氮化物半导体的表面上的碳，并且在其上形成氧化物膜，所以通过激活处理来防止氮化物半导体的表面劣化，并且提高了p型杂质的激活速率。 结果，可以降低氮化物半导体与电极的接触电阻，并因此降低氮化物半导体的特性的变化。

公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

申请人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

发明人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：US06838703B2

公开(公告)日：2005-01-04

申请号：US10779236

申请日：2004-02-13

申请人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

发明人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

IPC分类号： H01S5/223 ,  H01L33/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The nitride-based semiconductor laser device 10 has a stacked structure comprising a first contacting layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contacting layer 26 and a second electrode 30 which are consecutively stacked, the second cladding layer 24 comprises a lower layer 24A and an upper layer 24B, the first cladding layer 14, the active layer 20 and the lower layer 24A of the second cladding layer have a mesa structure, the upper layer 24B of the second cladding layer and the second contacting layer 26 have a ridge structure, an insulating layer 40 covering at least part of each of both side surfaces of the upper layer 24B of the second cladding layer is formed on the portions of the lower layer 24A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer 42 having substantially the same width as the mesa structure is formed on the top surface of the insulating layer 40 and the top surface of the second electrode 30 such that the metal layer 42 continues from one top surface to the other.

摘要翻译： 氮化物系半导体激光装置10具有包括第一接触层14，第一包层16，有源层20，第二包层24，第二接触层26和第二电极30的层叠结构，第一接触层14，第二包层24，第二接触层26和第二电极30 第二包覆层24包括下层24A和上层24B，第二包覆层的第一包层14，有源层20和下层24A具有台面结构，第二包层的上层24B 层和第二接触层26具有脊状结构，在第二包层的下层24A的部分上形成有覆盖第二包层的上层24B的两个侧面的至少一部分的至少一部分的绝缘层40 层，这些部分对应于台面结构的顶表面，此外，具有与台面结构基本相同的宽度的金属层42形成在绝缘层1a的顶表面上 yer 40和第二电极30的顶表面，使得金属层42从一个顶表面延伸到另一个顶表面。

公开(公告)号：US07149235B2

公开(公告)日：2006-12-12

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

公开(公告)号：US20050218422A1

公开(公告)日：2005-10-06

申请号：US11132981

申请日：2005-05-19

申请人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

发明人： Tsuyoshi Tojo ,  Tomonori Hino ,  Osamu Goto ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L29/24

CPC分类号： H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μM while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

摘要翻译： 提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。 该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。 相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。 在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极 ）。 激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。 激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光器之间的距离B <2 <2> 条纹（42D）和n型电极（52A）不大于150μm。