摘要:
A process for production of titanium alloy material has steps of hydrogenating titanium alloy material to generate hydrogenated titanium alloy; grinding, sifting and dehydrogenating the hydrogenated titanium alloy powder to generate titanium alloy powder; adding at least one of copper powder, chromium powder or iron powder to obtain titanium alloy complex powder; consolidating the titanium alloy complex powder by CIP process and subsequent HIP process, or by HIP process after filling the titanium alloy complex powder into a capsule. In addition, titanium alloy complex powder and titanium alloy material produced by the process are provided.
摘要:
Titanium alloy complex powder is yielded by hydrogenating titanium alloy raw material to generate hydrogenated titanium alloy, grinding and sifting it to obtain hydrogenated titanium alloy powder, adding ceramic powder selected from SiC, TiC, SiOx, TiOx (here, index x is a real number which is in 1≦x≦2) and Al2O3, and dehydrogenating the mixture of the hydrogenated titanium alloy powder and the ceramic powder. In addition, consolidated titanium alloy material is obtained by CIP process and subsequent HIP process to the titanium alloy complex powder or by HIP process after filling the titanium alloy complex powder into capsule.
摘要翻译:通过氢化钛合金原料生成氢化钛合金,研磨和筛分得到氢化钛合金粉末,加入选自SiC,TiC,SiOx,TiOx的陶瓷粉末,得到钛合金复合粉末(这里,折射率x为实数 其在1≦̸ x< 2; 2)和Al 2 O 3中,并使氢化钛合金粉末和陶瓷粉末的混合物脱氢。 此外,通过CIP工艺和随后的HIP工艺,通过钛合金复合粉末或通过HIP工艺将钛合金复合粉末填充到胶囊中后获得固结的钛合金材料。
摘要:
A process of forming an LC composite part. The process includes the steps of: forming a substrate having a capacitor section by laminating ceramic sheets having a plurality of capacitor electrodes formed thereon such that the ceramic sheets and electrode layers alternate, sintering the substrate, forming a plurality of coil sections on the sintered substrate, cutting the substrate into composite parts, and electrically connecting the capacitor electrode layers with the coil section.
摘要:
Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.
摘要:
A ceramic dielectric composition for temperature compensating capacitors comprising 64-70.5% by weight of SrTiO.sub.3, 28-34% by weight of CaTiO.sub.3 and 1.5-4.5% by weight of Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3.nTiO.sub.2 (where n=1 to 5). Not more than 10% by weight of MgTiO.sub.3 may be added, as necessary. The composition has high dielectric constant above 235 and Q above 2000 and low temperature coefficient of a dielectric constant up to -1000.times.10.sup.-6 /.degree.C. The ceramic element obtained by the composition has a large adhesion strength to electroless plating electrodes (nickel or copper).
摘要翻译:一种用于温度补偿电容器的陶瓷电介质组合物,其包含64-70.5重量%的SrTiO 3,28-34重量%的CaTiO 3和1.5-4.5重量%的Bi 2 O 3或Bi 2 O 3·nTiO 2(其中n = 1至5)。 根据需要可添加不超过10重量%的MgTiO 3。 该组合物具有高于235的高介电常数和2000以上的Q,介电常数的低温系数低至-1000×10 -6 /℃。通过该组合物获得的陶瓷元件对化学镀电极(镍或铜 )。
摘要:
A titanium oxide photocatalyst obtained by hydrolyzing or neutralizing with an alkali an aqueous solution of titanium chloride to obtain a solid component, incorporating sulfur or a sulfur-containing compound in any step of the process, and baking the solid containing the sulfur or sulfur-containing compound. The titanium oxide photocatalyst can be efficiently produced in an industrial production scale and has a high photocatalytic activity in a visible-light region.
摘要:
There is provided copper targets for sputtering capable of forming a deposition film with low electric resistance indispensable for high-speed operation elements and also with excellent thickness uniformity, and such thin copper films. A high-purity copper sputtering target is characterized by comprising up to 0.1 ppm each Na and K, up to 1 ppm each Fe, Ni, Cr, Al, Ca, Mg, up to 5 ppm each carbon and oxygen, up to 1 ppb each U and Th, and, excluding gaseous constituents, more than 99.999% copper. Preferably the average grain size on the sputter surface is 250 &mgr;m or below, with its dispersion thin plus or minus 20%. I(111)/I(200) of X-ray diffraction peak intensity on the sputter plane is at least 2.4 with its dispersion within plus or minus 20%.
摘要:
Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer. The burden of the deformed layer-removal step on the process is light.
摘要翻译:用于溅射的硅化物靶,其具有在溅射表面上出现的硅相的面积比不超过23%,密度至少为99%,其中变形的层部分地从表面去除以获得表面粗糙度 大于0.05μm至1μm,优选地,出现在溅射表面上的直径至少为10μm的粗硅相数量最多为10 / mm 2。 早期颗粒产生的减少又减少了二次颗粒的产生,从而实现了早期阶段和稳定阶段颗粒产生的减少。 将最大粒径不大于20μm的Si粉末与Si最低混合比的最大粒径不大于60μm的金属粉末混合。 从混合物中合成硅化物粉末并进行热压,将烧结体加工并进行表面处理以除去变形层。 过程中变形层去除步骤的负担很轻。
摘要:
Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.
摘要:
There is provided an image processing apparatus capable of preventing colors from changing while being displayed when images are combined. The image processing apparatus according to an embodiment includes a video graphic processor that combines a plurality of image signals to generate a combined image signal and an HDMI Tx that transmits, when the combined image signal is transmitted, an identification flag of one of a first color space standard and a second color space standard having a color gamut wider than a color gamut of the first color space standard as the color space standard of the combined image signal and a host CPU decides the first or second color space standard so as to prevent change in color while being displayed.