Method of producing an LC composite part and an LC network part
    3.
    发明授权
    Method of producing an LC composite part and an LC network part 失效
    LC复合部件和LC网络部件的制造方法

    公开(公告)号:US5197170A

    公开(公告)日:1993-03-30

    申请号:US613071

    申请日:1990-11-15

    IPC分类号: H01G4/40 H03H1/00 H03H7/01

    摘要: A process of forming an LC composite part. The process includes the steps of: forming a substrate having a capacitor section by laminating ceramic sheets having a plurality of capacitor electrodes formed thereon such that the ceramic sheets and electrode layers alternate, sintering the substrate, forming a plurality of coil sections on the sintered substrate, cutting the substrate into composite parts, and electrically connecting the capacitor electrode layers with the coil section.

    摘要翻译: 形成LC复合部件的工艺。 该方法包括以下步骤:通过层叠形成有多个电容器电极的陶瓷片来形成具有电容器部的基板,使得陶瓷片和电极层交替,烧结基板,在烧结基板上形成多个线圈部 将基板切割成复合部件,并将电容器电极层与线圈部分电连接。

    Silicide targets for sputtering
    4.
    发明授权
    Silicide targets for sputtering 失效
    用于溅射的硅化物靶

    公开(公告)号:US5618397A

    公开(公告)日:1997-04-08

    申请号:US423233

    申请日:1995-04-17

    摘要: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

    摘要翻译: 提供金属硅化物靶用于溅射,其具有至少99%的密度,不超过一个在溅射表面上以每平方毫米出现的尺寸为10μm或更大的粗硅相,并且氧含量最多 150 ppm。 它们通过包括细粉碎合成的硅化物粉末,在不加压力的情况下在热压模具中真空退火精细粉碎的方法制造,然后通过热压压制和烧结至少99%的密度 。 或者,将细粉末以50〜75%的密度比作为预烧结体真空退火,然后压实烧结。

    Temperature compensating titanate ceramic capacitor with nickel or
copper electroless metal electrodes
    5.
    发明授权
    Temperature compensating titanate ceramic capacitor with nickel or copper electroless metal electrodes 失效
    具有镍或铜无电金属电极的温度补偿钛酸盐陶瓷电容器

    公开(公告)号:US4482934A

    公开(公告)日:1984-11-13

    申请号:US516744

    申请日:1983-07-25

    CPC分类号: C04B35/47 H01G4/1227

    摘要: A ceramic dielectric composition for temperature compensating capacitors comprising 64-70.5% by weight of SrTiO.sub.3, 28-34% by weight of CaTiO.sub.3 and 1.5-4.5% by weight of Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3.nTiO.sub.2 (where n=1 to 5). Not more than 10% by weight of MgTiO.sub.3 may be added, as necessary. The composition has high dielectric constant above 235 and Q above 2000 and low temperature coefficient of a dielectric constant up to -1000.times.10.sup.-6 /.degree.C. The ceramic element obtained by the composition has a large adhesion strength to electroless plating electrodes (nickel or copper).

    摘要翻译: 一种用于温度补偿电容器的陶瓷电介质组合物,其包含64-70.5重量%的SrTiO 3,28-34重量%的CaTiO 3和1.5-4.5重量%的Bi 2 O 3或Bi 2 O 3·nTiO 2(其中n = 1至5)。 根据需要可添加不超过10重量%的MgTiO 3。 该组合物具有高于235的高介电常数和2000以上的Q,介电常数的低温系数低至-1000×10 -6 /℃。通过该组合物获得的陶瓷元件对化学镀电极(镍或铜 )。

    Titanium oxide photocatalyst and method for preparation thereof
    6.
    发明申请
    Titanium oxide photocatalyst and method for preparation thereof 审中-公开
    二氧化钛光催化剂及其制备方法

    公开(公告)号:US20070161504A1

    公开(公告)日:2007-07-12

    申请号:US10592471

    申请日:2005-03-10

    IPC分类号: B01J27/02

    摘要: A titanium oxide photocatalyst obtained by hydrolyzing or neutralizing with an alkali an aqueous solution of titanium chloride to obtain a solid component, incorporating sulfur or a sulfur-containing compound in any step of the process, and baking the solid containing the sulfur or sulfur-containing compound. The titanium oxide photocatalyst can be efficiently produced in an industrial production scale and has a high photocatalytic activity in a visible-light region.

    摘要翻译: 通过碱性水解或中和氯化钛水溶液得到的氧化钛光催化剂,得到固体成分,在该方法的任何步骤中加入硫或含硫化合物,并焙烧含有硫或硫的固体 复合。 氧化钛光催化剂可以以工业生产规模有效地生产,并且在可见光区域具有高的光催化活性。

    High-purity copper sputtering targets and thin films
    7.
    发明授权
    High-purity copper sputtering targets and thin films 失效
    高纯度铜溅射靶和薄膜

    公开(公告)号:US06451135B1

    公开(公告)日:2002-09-17

    申请号:US09081684

    申请日:1998-05-20

    IPC分类号: C23C1434

    摘要: There is provided copper targets for sputtering capable of forming a deposition film with low electric resistance indispensable for high-speed operation elements and also with excellent thickness uniformity, and such thin copper films. A high-purity copper sputtering target is characterized by comprising up to 0.1 ppm each Na and K, up to 1 ppm each Fe, Ni, Cr, Al, Ca, Mg, up to 5 ppm each carbon and oxygen, up to 1 ppb each U and Th, and, excluding gaseous constituents, more than 99.999% copper. Preferably the average grain size on the sputter surface is 250 &mgr;m or below, with its dispersion thin plus or minus 20%. I(111)/I(200) of X-ray diffraction peak intensity on the sputter plane is at least 2.4 with its dispersion within plus or minus 20%.

    摘要翻译: 提供用于溅射的铜靶,其能够形成对于高速操作元件不可缺少的低电阻并且具有优异的厚度均匀性的沉积膜,以及这种薄的铜膜。 高纯度铜溅射靶的特征在于每个Na和K含有高达0.1ppm的Fe,Ni,Cr,Al,Ca,Mg,每个碳和氧高达5ppm,最高达1ppb 每个U和Th,不包括气体组分,铜超过99.999%。 优选地,溅射表面上的平均晶粒尺寸为250μm或更小,其分散体薄加或减20%。 溅射平面上的X射线衍射峰强度的I(111)/ I(200)至少为2.4,其分散在正或负20%之内。

    Silicide targets for sputtering and method of manufacturing the same
    8.
    发明授权
    Silicide targets for sputtering and method of manufacturing the same 失效
    用于溅射的硅化物靶及其制造方法

    公开(公告)号:US5464520A

    公开(公告)日:1995-11-07

    申请号:US94283

    申请日:1993-07-19

    摘要: Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer. The burden of the deformed layer-removal step on the process is light.

    摘要翻译: 用于溅射的硅化物靶,其具有在溅射表面上出现的硅相的面积比不超过23%,密度至少为99%,其中变形的层部分地从表面去除以获得表面粗糙度 大于0.05μm至1μm,优选地,出现在溅射表面上的直径至少为10μm的粗硅相数量最多为10 / mm 2。 早期颗粒产生的减少又减少了二次颗粒的产生,从而实现了早期阶段和稳定阶段颗粒产生的减少。 将最大粒径不大于20μm的Si粉末与Si最低混合比的最大粒径不大于60μm的金属粉末混合。 从混合物中合成硅化物粉末并进行热压,将烧结体加工并进行表面处理以除去变形层。 过程中变形层去除步骤的负担很轻。

    Silicide targets for sputtering and method of manufacturing the same
    9.
    发明授权
    Silicide targets for sputtering and method of manufacturing the same 失效
    用于溅射的硅化物靶及其制造方法

    公开(公告)号:US5460793A

    公开(公告)日:1995-10-24

    申请号:US224445

    申请日:1994-04-07

    摘要: Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.

    摘要翻译: 提供金属硅化物靶用于溅射,其具有至少99%的密度,不超过一个在溅射表面上以每平方毫米出现的尺寸为10μm或更大的粗硅相,并且氧含量最多 150 ppm。 它们通过包括细粉碎合成的硅化物粉末,在不加压力的情况下在热压模具中真空退火精细粉碎的方法制造,然后通过热压压制和烧结至少99%的密度 。 或者,将细粉末以50〜75%的密度比作为预烧结体进行真空退火,然后压实烧结。

    Image processing apparatus
    10.
    发明授权
    Image processing apparatus 失效
    图像处理装置

    公开(公告)号:US08538197B2

    公开(公告)日:2013-09-17

    申请号:US12452902

    申请日:2008-07-03

    摘要: There is provided an image processing apparatus capable of preventing colors from changing while being displayed when images are combined. The image processing apparatus according to an embodiment includes a video graphic processor that combines a plurality of image signals to generate a combined image signal and an HDMI Tx that transmits, when the combined image signal is transmitted, an identification flag of one of a first color space standard and a second color space standard having a color gamut wider than a color gamut of the first color space standard as the color space standard of the combined image signal and a host CPU decides the first or second color space standard so as to prevent change in color while being displayed.

    摘要翻译: 提供一种图像处理装置,其能够在图像组合时在显示时防止颜色变化。 根据实施例的图像处理装置包括组合多个图像信号以产生组合图像信号的视频图形处理器和当发送组合图像信号时发送第一颜色之一的识别标志的HDMI Tx 空间标准和具有比第一颜色空间标准的色域宽的色域的第二颜色空间标准作为组合图像信号的色彩空间标准,并且主机CPU决定第一或第二颜色空间标准以防止改变 在显示时颜色。