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公开(公告)号：US06242746B1
公开(公告)日：2001-06-05
申请号：US09239855
申请日：1999-01-29
IPC分类号： G01J124
CPC分类号： H01L27/14676 , H01L27/12
摘要： In a two-dimensional image detecting device, an active-matrix substrate which is provided with an electrical charge storage capacity and TFT(thin-film transistor) and an opposing substrate which is provided with a semiconductive substrate are bonded to each other by using connecting members with conductivity and bonding property that are patterned in accordance with pixel electrodes of the electrical charge storage capacity. With this arrangement, it is not necessary to form a semiconductive layer onto the active-matrix substrate, the TFT having been already formed on the active-matrix substrate; thus, it is possible to form the semiconductive substrate of the opposing substrate that is made of a material selected from the group consisting of CdTe and CdZnTe, etc. Consequently, the two-dimensional image detecting device is superior in response and is capable of dealing with moving image as well.
摘要翻译： 在二维图像检测装置中，具有电荷存储容量的有源矩阵基板和TFT（薄膜晶体管）和具有半导体基板的相对基板通过使用连接 具有根据电荷存储容量的像素电极图案化的导电性和结合性的构件。 通过这种布置，不需要在有源矩阵基板上形成半导体层，TFT已经形成在有源矩阵基板上; 因此，可以形成由选自CdTe和CdZnTe等的材料制成的相对基板的半导体基板。因此，二维图像检测装置的响应性优异并且能够交易 还有运动图像。
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公开(公告)号：US06262408B1
公开(公告)日：2001-07-17
申请号：US09229269
申请日：1999-01-13
IPC分类号： H01L2700
CPC分类号： H01L27/14676 , H01L2924/351
摘要： A two-dimensional image detector of the present invention includes: an active matrix substrate equipped with charge storage capacitors and TFTs; and an opposing substrate equipped with a semiconductor substrate. The two-dimensional image detector is formed by adhering the active matrix substrate and the opposing substrate to each other with an anisotropic conductive adhesive agent. With this structure, since a semiconductor layer is not required to be deposited on the active matrix substrate where the TFTs are already formed, it is possible to use CdTe, CdZnTe, etc. The use of CdTe, CdZnTe, etc. as a material of the semiconductor layer having photoconductivity allows the two-dimensional image detector to show good response and to deal with the dynamic images.
摘要翻译： 本发明的二维图像检测器包括：配备有电荷存储电容器和TFT的有源矩阵基板; 以及配备有半导体基板的对置基板。 二维图像检测器通过用各向异性导电粘合剂将有源矩阵基板和相对基板彼此粘合而形成。 利用这种结构，由于半导体层不需要沉积在已经形成TFT的有源矩阵基板上，所以可以使用CdTe，CdZnTe等。使用CdTe，CdZnTe等作为 具有光电导性的半导体层允许二维图像检测器显示出良好的响应并且处理动态图像。
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公开(公告)号：US07388184B2
公开(公告)日：2008-06-17
申请号：US10531277
申请日：2003-09-16
申请人： Yoshihiro Izumi , Kazuhiro Uehara , Tomohiko Oda , Osamu Teranuma
发明人： Yoshihiro Izumi , Kazuhiro Uehara , Tomohiko Oda , Osamu Teranuma
IPC分类号： H04N1/028
CPC分类号： H04N1/0318 , H01L27/14676
摘要： The image reading device of the present invention includes (i) a sensor substrate which functions as a photoelectric transfer element having a photodetecting TFT and a pixel capacitor and (ii) a driving IC for applying a voltage to a gate electrode of the photodetecting TFT so as to drive the photodetecting TFT into an ON state or an OFF state. The driving IC applies a voltage, whose polarity is opposite to average polarity of a voltage making the photodetecting TFT in the OFF state, to the gate electrode of the photodetecting TFT in an arbitrary period. Thus, it is possible to provide the image reading device which can suppress variation of a photodetecting TFT property (resistance value) which is observed in a short time.
摘要翻译： 本发明的图像读取装置包括（i）作为具有受光TFT的TFT和像素电容器的光电转移元件的传感器基板，以及（ii）向受光TFT的栅电极施加电压的驱动IC， 以将光电检测TFT驱动到ON状态或OFF状态。 驱动IC将与受光截止状态的电压的平均极性相反的极性与任意期间的受光TFT的栅电极相加。 因此，可以提供能够抑制在短时间内观察到的受光TFT特性（电阻值）的变化的图像读取装置。
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公开(公告)号：US06373116B1
公开(公告)日：2002-04-16
申请号：US09631967
申请日：2000-08-03
申请人： Osamu Teranuma , Yoshihiro Izumi
发明人： Osamu Teranuma , Yoshihiro Izumi
IPC分类号： H01L2700
CPC分类号： H01L27/1214
摘要： In a two-dimensional image detector in accordance with the present invention, an active matrix substrate includes: a gate insulating film provided on gate electrodes and storage capacitance electrodes (Cs electrodes) provided in turn on a glass substrate; a first insulating protection layer and a second insulating protection layer sequentially provided on the gate insulating film; and pixel electrodes provided on the second insulating protection layer in a matrix. The second insulating protection layer is made of an acrylic resin, and its edges are completely covered with the photoconductor film.
摘要翻译： 在根据本发明的二维图像检测器中，有源矩阵基板包括：设置在栅极上的栅极绝缘膜和依次设置在玻璃基板上的存储电容电极（Cs电极）;第一绝缘保护层和 依次设置在所述栅极绝缘膜上的第二绝缘保护层; 和设置在第二绝缘保护层上的像素电极。 第二绝缘保护层由丙烯酸树脂制成，其边缘被感光膜完全覆盖。
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公开(公告)号：US07038213B2
公开(公告)日：2006-05-02
申请号：US10850314
申请日：2004-05-19
申请人： Yoshihiro Izumi , Osamu Teranuma
发明人： Yoshihiro Izumi , Osamu Teranuma
CPC分类号： H01L27/14618 , G02F1/13336 , H01L27/14609 , H01L27/14658 , H01L27/1469 , H01L31/1185 , H01L31/18 , H01L2924/0002 , H01L2924/00
摘要： A composite active-matrix substrate includes: a plurality of active-matrix substrates which are disposed adjacent to one another; a base substrate which is disposed to oppose a bottom surface of the active-matrix substrates; a sealant which is disposed in the form of a frame between the active-matrix substrate and the base substrate; a first filler which fills a spacing surrounded by the active-matrix substrate, the base substrate, and the sealant; and a second filler which fills a gap between edges of the active-matrix substrates. The sealant prevents the first filler from seeping out. In this way, seeping of an adhesive filler can be prevented in the arrangement where a plurality of active-matrix substrates are fixed on the base substrate using the adhesive filler. An electromagnetic wave capturing device according to the present invention uses such a composite active-matrix substrate.
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公开(公告)号：US06980008B2
公开(公告)日：2005-12-27
申请号：US10190801
申请日：2002-07-08
申请人： Osamu Teranuma , Yoshihiro Izumi
发明人： Osamu Teranuma , Yoshihiro Izumi
CPC分类号： G06K19/0718 , G06K9/0002
摘要： An uneven pattern detector has a structure wherein (a) detecting elements, each being provided with a TFT which is a switching element and a detecting electrode, are arranged in a matrix manner, and (b) a CSA connected to each data line detects charged or discharged electric charges at the respective detecting elements on respective rows sequentially selected by a gate line, whereby a capacitance (a coupled capacitance of Cf and Cx) reflecting fingerprint unevenness on a finger as a detection object can be detected. In the uneven pattern detector, each of the detecting elements is provided with an auxiliary capacitor electrode located so as to face the detecting electrode. This forms an auxiliary capacitor Cs between the auxiliary capacitor electrode and the detecting electrode. Further, a positive-phase input terminal of an operational amplifier of the CSA is connected with the auxiliary capacitor electrode so as to hold the positive-phase input terminal of the operational amplifier of the CSA and the auxiliary capacitor electrode at an identical potential. As a result, the electric charges can be detected by the CSA without being affected by the auxiliary capacitor Cs.
摘要翻译： 不均匀图案检测器具有这样的结构，其中（a）检测元件（每个被设置有开关元件和检测电极的TFT）以矩阵方式布置，并且（b）连接到每个数据线的CSA检测到充电 或在由栅极线顺序选择的各行上的各检测元件上放电电荷，由此可以检测反映作为检测对象的手指上的指纹不均匀性的电容（Cf和Cx的耦合电容）。 在不均匀图案检测器中，每个检测元件设置有面对检测电极的辅助电容电极。 这在辅助电容电极和检测电极之间形成辅助电容器Cs。 此外，CSA的运算放大器的正相输入端子与辅助电容电极连接，以将CSA的运算放大器的正相输入端子和辅助电容器电极保持在相同的电位。 结果，可以由CSA检测电荷，而不受辅助电容器Cs的影响。
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公开(公告)号：US06562659B1
公开(公告)日：2003-05-13
申请号：US09585365
申请日：2000-06-02
申请人： Yoshihiro Izumi , Osamu Teranuma
发明人： Yoshihiro Izumi , Osamu Teranuma
IPC分类号： H01L2244
CPC分类号： H05K3/361
摘要： When TCP substrates serving as external circuits are packaged by thermocompression bonding onto input/output terminals on an active-matrix substrate including an a-Se film serving as an amorphous semiconductor layer, a cooling operation is performed by a cooling medium discharging nozzle on at least a part between the a-Se film and a thermocompression bonding part disposed between the TCP substrates and the input/output terminals on the active-matrix substrate. Thus, during the thermocompression bonding, a temperature of the a-Se film is maintained below its crystallizing temperature so as to prevent exfoliation of the amorphous semiconductor film and deterioration in characteristics thereof, upon packaging the external circuits by thermocompression bonding onto the input/output terminals on the substrate including the amorphous semiconductor film.
摘要翻译： 当作为外部电路的TCP基板通过热压接被封装在包括用作非晶半导体层的a-Se膜的有源矩阵基板上的输入/输出端子上时，至少冷却介质排出喷嘴执行冷却操作 a-Se膜和设置在TCP基板和有源矩阵基板上的输入/输出端子之间的热压接部分之间的部分。 因此，在热压接时，将a-Se膜的温度维持在其结晶温度以下，以防止通过热压接将外部电路封装在输入/输出上时，非晶半导体膜的剥离及其特性的劣化 在包括非晶半导体膜的基板上的端子。
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8.发明授权Manufacturing method for two-dimensional image detectors and two-dimensional image detectors 有权二维图像检测器和二维图像检测器的制造方法公开(公告)号：US06559451B1
公开(公告)日：2003-05-06
申请号：US09657528
申请日：2000-09-08
IPC分类号： H01L310203
CPC分类号： H01L31/02161 , H01L27/12 , H01L27/14609 , H01L27/14618 , H01L27/1462 , H01L27/14687 , H01L2924/0002 , H01L2924/00
摘要： A TFT array is formed on a glass substrate (step P1). A surface protection layer is formed on the glass substrate so as to cover the TFT array (step P2). The glass substrate is divided to form active matrix substrates with the surface protection layer being provided (step P3). The divided active matrix substrate is chamfered along its edges (step P4). The surface protection layer is removed from the active matrix substrate (step P5). An X-ray conductive layer is formed on the TFT array where the surface protection layer has been removed (step P6). By these steps, pollutants produced during the division and chamfering of the glass substrate are prevented from polluting the TFT array and the X-ray conductive layer, and the active element array and the semiconductor layer is prevented from deteriorating in terms of performance in manufacturing process for a two-dimensional image detector.
摘要翻译： 在玻璃基板上形成TFT阵列（步骤P1）。 在玻璃基板上形成表面保护层以覆盖TFT阵列（步骤P2）。 玻璃基板被分割以形成具有表面保护层的有源矩阵基板（步骤P3）。 分割的有源矩阵基板沿其边缘倒角（步骤P4）。 从有源矩阵基板去除表面保护层（步骤P5）。 在去除表面保护层的TFT阵列上形成X射线导电层（步骤P6）。 通过这些步骤，防止在玻璃基板的分割和倒角期间产生的污染物污染TFT阵列和X射线导电层，并且防止有源元件阵列和半导体层在制造过程中的性能方面劣化 用于二维图像检测器。
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公开(公告)号：US06342700B1
公开(公告)日：2002-01-29
申请号：US09298169
申请日：1999-04-23
IPC分类号： G01T124
CPC分类号： H01L31/10 , H01L27/14665 , H01L27/14683
摘要： An active matrix substrate provided with a matrix of electrode wires, a plurality of thin film transistors (TFTs) individually formed at intersections of the matrix, and pixel electrodes connected to the electrode wires through the thin film transistors (TFTs) is laminated to a counter substrate provided with connecting electrodes by means of an anisotropic conductive bonding agent. The counter substrate is composed of 12 divided pieces which are tiled as panes.
摘要翻译： 设置有电极线的矩阵的有源矩阵基板，分别形成在矩阵的交点处的多个薄膜晶体管（TFT）和通过薄膜晶体管（TFT）连接到电极线的像素电极被层压到计数器 基板通过各向异性导电粘合剂设置有连接电极。 对面基板由平铺为平铺的12个分割片组成。
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公开(公告)号：US20050270590A1
公开(公告)日：2005-12-08
申请号：US10531277
申请日：2003-09-16
申请人： Yoshihiro Izumi , Kazuhiro Uehara , Tomohiko Oda , Osamu Teranuma
发明人： Yoshihiro Izumi , Kazuhiro Uehara , Tomohiko Oda , Osamu Teranuma
IPC分类号： H01L27/146 , H01L27/14 , H04N1/028 , H04N1/031 , H04N1/04 , H04N5/335 , H04N5/369 , H04N5/376 , H04N5/378
CPC分类号： H04N1/0318 , H01L27/14676
摘要： The image reading device of the present invention includes (i) a sensor substrate which functions as a photoelectric transfer element having a photodetecting TFT and a pixel capacitor and (ii) a driving IC for applying a voltage to a gate electrode of the photodetecting TFT so as to drive the photodetecting TFT into an ON state or an OFF state. The driving IC applies a voltage, whose polarity is opposite to average polarity of a voltage making the photodetecting TFT in the OFF state, to the gate electrode of the photodetecting TFT in an arbitrary period. Thus, it is possible to provide the image reading device which can suppress variation of a photodetecting TFT property (resistance value) which is observed in a short time.
摘要翻译： 本发明的图像读取装置包括（i）作为具有受光TFT的TFT和像素电容器的光电转移元件的传感器基板，以及（ii）向受光TFT的栅电极施加电压的驱动IC， 以将光电检测TFT驱动到ON状态或OFF状态。 驱动IC将与受光截止状态的电压的平均极性相反的极性与任意期间的受光TFT的栅电极相加。 因此，可以提供能够抑制在短时间内观察到的受光TFT特性（电阻值）的变化的图像读取装置。
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