ULTRASONIC IMAGING USING THIN FILM TRANSISTOR BACKPLANE
    1.
    发明申请
    ULTRASONIC IMAGING USING THIN FILM TRANSISTOR BACKPLANE 有权
    超薄成像使用薄膜晶体管背板

    公开(公告)号:US20130235698A1

    公开(公告)日:2013-09-12

    申请号:US13867946

    申请日:2013-04-22

    CPC classification number: G01S15/89 B06B1/02 G01S15/8915 G01S15/8977

    Abstract: An embodiment is a method and apparatus for coherent ultrasonic imaging. A receiver array has a plurality of receiver elements on a substrate to detect in-phase and quadrature components of a received signal corresponding to a transmit signal. Each of the receiver elements includes a receiver transducer and a thin-film transistor (TFT) receiver circuit. The TFT receiver circuit includes a quadrature detector having a mixer to mix a received signal with a reference signal in a composite bias signal that is distributed across the plurality of receiver elements. A transmitter is acoustically coupled to the plurality of receiver elements to generate the transmit signal through an imaging medium.

    Abstract translation: 一个实施例是用于相干超声成像的方法和装置。 接收器阵列在衬底上具有多个接收器元件,以检测对应于发射信号的接收信号的同相和正交分量。 每个接收器元件包括接收器换能器和薄膜晶体管(TFT)接收器电路。 TFT接收器电路包括正交检测器,该正交检测器具有混合器,以将接收的信号与分布在多个接收器元件上的复合偏置信号中的参考信号进行混合。 发射机声耦合到多个接收机元件以通过成像介质产生发射信号。

    Gated co-planar poly-silicon thin film diode
    2.
    发明授权
    Gated co-planar poly-silicon thin film diode 有权
    门式共面多晶硅薄膜二极管

    公开(公告)号:US08871548B2

    公开(公告)日:2014-10-28

    申请号:US13770785

    申请日:2013-02-19

    Abstract: A diode has a first contact of a material having a first conductivity type, a second contact of a material having a second conductivity type arranged co-planarly with the first contact, a channel arranged co-planarly between the first and second contacts, a gate arranged adjacent the channel, and a voltage source electrically connected to the gate. A diode has a layer of material arranged on a substrate, a first region of material doped to have a first conductivity type, a second region of material doped to have a second conductivity type, a channel between the first and second regions formed of an undoped region, a gate arranged adjacent the channel, and a voltage source electrically connected to the gate. A method includes forming a layer of material on a substrate, forming a first region of a first conductivity in the material, forming a second region of a second conductivity in the material, arranged so as to provide a channel region between the first and second regions, the channel region remaining undoped, depositing a layer of gate dielectric on the layer of material, arranging a gate adjacent the channel region on the gate dielectric, and electrically connecting a voltage source to the gate.

    Abstract translation: 二极管具有第一导电类型的材料的第一接触,与第一接触面共面布置的具有第二导电类型的材料的第二接触,在第一和第二接触之间共面布置的沟道,栅极 布置在所述通道附近,以及电连接到所述栅极的电压源。 二极管具有布置在衬底上的材料层,第一掺杂材料区域具有第一导电类型,掺杂第二导电类型的第二材料区域,由未掺杂的第一和第二区域形成的沟道 区域,邻近沟道布置的栅极和电连接到栅极的电压源。 一种方法包括在衬底上形成材料层,在材料中形成第一导电性的第一区域,在材料中形成第二导电性的第二区域,其布置成在第一和第二区域之间提供沟道区域 ,沟道区域保留未掺杂,在该材料层上沉积一层栅极电介质,在栅极电介质上布置与该沟道区相邻的栅极,以及将电压源电连接至该栅极。

    Ultrasonic imaging using thin film transistor backplane
    3.
    发明授权
    Ultrasonic imaging using thin film transistor backplane 有权
    超声波成像采用薄膜晶体管背板

    公开(公告)号:US08733173B2

    公开(公告)日:2014-05-27

    申请号:US13867946

    申请日:2013-04-22

    CPC classification number: G01S15/89 B06B1/02 G01S15/8915 G01S15/8977

    Abstract: An embodiment is a method and apparatus for coherent ultrasonic imaging. A receiver array has a plurality of receiver elements on a substrate to detect in-phase and quadrature components of a received signal corresponding to a transmit signal. Each of the receiver elements includes a receiver transducer and a thin-film transistor (TFT) receiver circuit. The TFT receiver circuit includes a quadrature detector having a mixer to mix a received signal with a reference signal in a composite bias signal that is distributed across the plurality of receiver elements. A transmitter is acoustically coupled to the plurality of receiver elements to generate the transmit signal through an imaging medium.

    Abstract translation: 一个实施例是用于相干超声成像的方法和装置。 接收器阵列在衬底上具有多个接收器元件,以检测对应于发射信号的接收信号的同相和正交分量。 每个接收器元件包括接收器换能器和薄膜晶体管(TFT)接收器电路。 TFT接收器电路包括正交检测器,该正交检测器具有混合器,以将接收的信号与分布在多个接收器元件上的复合偏置信号中的参考信号进行混合。 发射机声耦合到多个接收机元件以通过成像介质产生发射信号。

    METHOD FOR IMPROVED TESTING OF TRANSISTOR ARRAYS
    4.
    发明申请
    METHOD FOR IMPROVED TESTING OF TRANSISTOR ARRAYS 审中-公开
    改进晶体管阵列测试方法

    公开(公告)号:US20130335113A1

    公开(公告)日:2013-12-19

    申请号:US13969312

    申请日:2013-08-16

    Inventor: Raj B. Apte

    CPC classification number: G09G3/006

    Abstract: An electronic test system to evaluate the pixel and array properties of active-matrix displays that use charge or current sensitive circuits attached to the array data lines is described. Leakage-current, charging time, and other metrics can be measured for all pixels in the array without electrical or optical connection to the interior of the array. Charge or current sensitive amplifiers and selected voltage drivers may be used in conjunction with variable timing and voltages to determine individual transistor properties over an entire array in just a few seconds. Signals to be measured may be injected in several ways. Ultimately, an output signal for each pixel is measured. Thus, based on the output signal, the charging time or current, the leakage time or current, and other pixel or transistor parameters may be characterized for the entire array.

    Abstract translation: 描述了一种用于评估使用附加到阵列数据线的电荷或电流敏感电路的有源矩阵显示器的像素和阵列特性的电子测试系统。 对于阵列中的所有像素,可以测量漏电流,充电时间和其他度量,而无需连接到阵列内部的电或光连接。 充电或电流敏感放大器和选定的电压驱动器可以与可变定时和电压结合使用,以在短短几秒钟内确定整个阵列上的单个晶体管属性。 要测量的信号可以以几种方式注入。 最终,测量每个像素的输出信号。 因此,基于输出信号,可以对整个阵列表征充电时间或电流,泄漏时间或电流以及其它像素或晶体管参数。

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