公开(公告)号：US3879613A

公开(公告)日：1975-04-22

申请号：US46824874

申请日：1974-05-09

Applicant: PHILIPS CORP

Inventor： SCOTT JULIAN PORTWAY ,  BEALE JULIAN ROBERT ANTHONY

IPC: H01J37/30 ,  H01J37/304 ,  H01L21/00 ,  H01J37/26

CPC classification number: H01J37/3045 ,  H01J37/30 ,  H01L21/00 ,  H01L2223/54453 ,  Y10S438/975

Abstract: A method of aligning a semiconductor body with respect to an electron beam pattern, comprising for each direction with respect to which alignment is desired, the steps of: forming on the semiconductor body a reference marker having two outer regions of one conductivity type semiconductor material separated by an intermediate region of opposite conductivity type semiconductor material; forming an alignment electron beam positionally fixed relative to the electron beam pattern and suitably crosssectioned such that when the electron beam pattern is aligned with respect to the semiconductor body, said alignment electron beam strikes said intermediate region midway between said two outer regions causing thereby equal currents diffusing thereto from each of said two outer regions; comparing the currents diffusing into said intermediate region from each of said two outer regions; and adjusting the relative position of the electron beam pattern with respect to the semiconductor body until said compared currents are equal.

Abstract translation: 相对于电子束图案对准半导体本体的方法，包括针对期望相对于哪个对准的每个方向的步骤：在半导体主体上形成具有两个外部区域的参考标记，所述两个外部区域分隔成一个导电型半导体材料 通过相反导电型半导体材料的中间区域; 形成相对于电子束图案位置固定的对准电子束，并适当地横截面，使得当电子束图案相对于半导体本体排列时，所述对准电子束在所述两个外部区域之间的中间部分处于所述两个外部区域之间的所述中间区域 从所述两个外部区域中的每一个向其扩散相等的电流; 比较从所述两个外部区域中的每一个扩散到所述中间区域的电流; 并且调整电子束图案相对于半导体本体的相对位置，直到所述比较电流相等。