公开(公告)号：US20190140160A1

公开(公告)日：2019-05-09

申请号：US16079522

申请日：2017-02-24

Applicant: PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

Inventor： Akira YOSHIKAWA ,  Yuui YOKOTA ,  Yuji OHASHI ,  Kei KAMADA ,  Tetsuo KUDO ,  Kenji INOUE ,  Yasuhiro SHOJI ,  Yu IGARASHI ,  Mototaka ARAKAWA ,  Shunsuke KUROSAWA ,  Akihiro YAMAJI

IPC: H01L41/187 ,  C30B29/34 ,  C30B15/08 ,  C01B33/24 ,  C01B33/26 ,  H01L41/41

Abstract: The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1-xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0≤x≤1, −0.5

公开(公告)号：US20180323366A1

公开(公告)日：2018-11-08

申请号：US15773157

申请日：2016-11-04

Applicant: PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

Inventor： Akira YOSHIKAWA ,  Yuji OHASHI ,  Yuui YOKOTA ,  Kei KAMADA ,  Masatoshi ITO ,  Kenji INOUE ,  Hiroyuki AMANO

IPC: H01L41/113 ,  H01L41/187 ,  H01L41/09 ,  H01L41/047

CPC classification number: H01L41/1132 ,  H01L41/0472 ,  H01L41/053 ,  H01L41/09 ,  H01L41/113 ,  H01L41/187 ,  H03H9/17

Abstract: To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0

公开(公告)号：US20180226939A1

公开(公告)日：2018-08-09

申请号：US15750821

申请日：2016-07-25

Applicant: PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

Inventor： Kenji INOUE ,  Akira YOSHIKAWA ,  Yuji OHASHI ,  Yuui YOKOTA ,  Kei KAMADA ,  Shunsuke KUROSAWA

IPC: H03H3/04 ,  H03H9/13 ,  H03H9/17

Abstract: To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.