公开(公告)号：US20190140160A1

公开(公告)日：2019-05-09

申请号：US16079522

申请日：2017-02-24

申请人： PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

发明人： Akira YOSHIKAWA ,  Yuui YOKOTA ,  Yuji OHASHI ,  Kei KAMADA ,  Tetsuo KUDO ,  Kenji INOUE ,  Yasuhiro SHOJI ,  Yu IGARASHI ,  Mototaka ARAKAWA ,  Shunsuke KUROSAWA ,  Akihiro YAMAJI

IPC分类号： H01L41/187 ,  C30B29/34 ,  C30B15/08 ,  C01B33/24 ,  C01B33/26 ,  H01L41/41

摘要： The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1-xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0≤x≤1, −0.5

公开(公告)号：US20180323366A1

公开(公告)日：2018-11-08

申请号：US15773157

申请日：2016-11-04

申请人： PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

发明人： Akira YOSHIKAWA ,  Yuji OHASHI ,  Yuui YOKOTA ,  Kei KAMADA ,  Masatoshi ITO ,  Kenji INOUE ,  Hiroyuki AMANO

IPC分类号： H01L41/113 ,  H01L41/187 ,  H01L41/09 ,  H01L41/047

CPC分类号： H01L41/1132 ,  H01L41/0472 ,  H01L41/053 ,  H01L41/09 ,  H01L41/113 ,  H01L41/187 ,  H03H9/17

摘要： To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0

公开(公告)号：US20180226939A1

公开(公告)日：2018-08-09

申请号：US15750821

申请日：2016-07-25

申请人： PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

发明人： Kenji INOUE ,  Akira YOSHIKAWA ,  Yuji OHASHI ,  Yuui YOKOTA ,  Kei KAMADA ,  Shunsuke KUROSAWA

IPC分类号： H03H3/04 ,  H03H9/13 ,  H03H9/17

摘要： To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

公开(公告)号：US20180100101A1

公开(公告)日：2018-04-12

申请号：US15566199

申请日：2016-05-27

申请人： TOHOKU UNIVERSITY ,  C&A CORPORATION

发明人： Shunsuke KUROSAWA ,  Akira YOSHIKAWA ,  Kei KAMADA ,  Yuui YOKOTA ,  Yuji OHASHI ,  Takahiko HORIAI ,  Yasuhiro SHOJI ,  Rikito MURAKAMI

IPC分类号： C09K11/77 ,  H01L27/146 ,  C01F17/00 ,  G01T1/202 ,  G01T1/20 ,  C30B29/22 ,  C30B15/00

CPC分类号： C09K11/7774 ,  C01F17/0043 ,  C09K11/00 ,  C30B15/00 ,  C30B29/22 ,  G01T1/161 ,  G01T1/20 ,  G01T1/2006 ,  G01T1/202 ,  G01T1/2023 ,  H01L27/14663 ,  H01L31/0232

摘要： A crystal material that is represented by a general formula (1): (RExA1-x-y-sByM′s)2+α(Si1-t′M″t)2+βO7+γ (1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1≤y

公开(公告)号：US20150346360A1

公开(公告)日：2015-12-03

申请号：US14655666

申请日：2013-12-26

申请人： TOHOKU UNIVERSITY

发明人： Akira YOSHIKAWA ,  Shunsuke KUROSAWA ,  Yuui YOKOTA ,  Yasuhiro SHOJI ,  Akira SUZUKI ,  Toetsu SHISHIDO

IPC分类号： G01T1/202 ,  C09K11/77

CPC分类号： G01T1/2023 ,  C09K11/7769 ,  C09K11/7774 ,  C09K11/7775 ,  C30B13/00 ,  C30B15/00 ,  C30B29/22 ,  C30B29/32 ,  C30B29/34 ,  G21K4/00

摘要： A crystal material represented by a general formula (1): (Gd1-x-y-zLaxMEyREz)2MM2O7 (1), where ME is at least one selected from Y, Yb, Sc, and Lu; RE is Ce or Pr; MM is at least one selected from Si and Ge; and ranges of x, y, and z are represented by the following (i): (i) 0.0≦x+y+z

摘要翻译： 由通式（1）表示的结晶材料：（Gd1-x-y-zLaxMEyREz）2MM2O7（1），其中ME为选自Y，Yb，Sc和Lu中的至少一种; RE为Ce或Pr; MM是选自Si和Ge中的至少一种; 并且x，y和z的范围由以下（i）表示：（i）0.0＆nlE; x + y + z <1.0,0.05＆nlE; x + z <1.0,0.0＆amp; nlE; y <1.0和0.0001 ＆nlE; z <0.05（其中，当RE为Ce时，y = 0为例外）。