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公开(公告)号:US09779918B2
公开(公告)日:2017-10-03
申请号:US14542891
申请日:2014-11-17
Applicant: PSK INC.
Inventor: Chang Weon Lee
IPC: C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/44 , C23C16/458
CPC classification number: H01J37/32834 , C23C16/4412 , C23C16/4585 , H01J37/32091
Abstract: Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.
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公开(公告)号:US09508541B2
公开(公告)日:2016-11-29
申请号:US14146314
申请日:2014-01-02
Applicant: PSK INC.
Inventor: Jongjin Lee , Bum Joon Park , Tae Hoon Kim , Chang Weon Lee , Sunwoong Yim , Han Kyu Lee
IPC: B08B6/00 , H01L21/02 , H01J37/32 , H01L21/673 , H01L21/677 , H01L21/687 , H01L21/683
CPC classification number: H01L21/02046 , H01J37/32192 , H01J37/32779 , H01L21/02076 , H01L21/67383 , H01L21/67766 , H01L21/6835 , H01L21/6836 , H01L21/68707 , H01L2221/68327 , H01L2221/6834
Abstract: Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a load port on which a carrier accommodating a plurality of substrates to which a back-ground wafer is attached to a mounting tape fixed to a frame ring is placed, a plasma treatment unit supplying plasma to treat a top surface of the wafer, and a substrate transfer unit transferring the substrate between the carrier and the plasma treatment unit.
Abstract translation: 提供了一种基板处理装置。 基板处理装置包括负载端口,载置有容纳多个基板的载体,背面晶片与固定在框架环上的安装带相连接,等离子体处理单元,其供给等离子体以处理 晶片和在载体和等离子体处理单元之间转移衬底的衬底转移单元。
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公开(公告)号:US20140190513A1
公开(公告)日:2014-07-10
申请号:US14146314
申请日:2014-01-02
Applicant: PSK INC.
Inventor: Jongjin Lee , Bum Joon Park , Tae Hoon Kim , Chang Weon Lee , Sunwoong Yim , Han Kyu Lee
IPC: H01L21/02
CPC classification number: H01L21/02046 , H01J37/32192 , H01J37/32779 , H01L21/02076 , H01L21/67383 , H01L21/67766 , H01L21/6835 , H01L21/6836 , H01L21/68707 , H01L2221/68327 , H01L2221/6834
Abstract: Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a load port on which a carrier accommodating a plurality of substrates to which a back-ground wafer is attached to a mounting tape fixed to a frame ring is placed, a plasma treatment unit supplying plasma to treat a top surface of the wafer, and a substrate transfer unit transferring the substrate between the carrier and the plasma treatment unit.
Abstract translation: 提供了一种基板处理装置。 基板处理装置包括负载端口,载置有容纳多个基板的载体,背面晶片与固定在框架环上的安装带相连接,等离子体处理单元,其供给等离子体以处理 晶片和在载体和等离子体处理单元之间转移衬底的衬底转移单元。
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