Substrate treating apparatus and method

    公开(公告)号:US09779918B2

    公开(公告)日:2017-10-03

    申请号:US14542891

    申请日:2014-11-17

    Applicant: PSK INC.

    Inventor: Chang Weon Lee

    CPC classification number: H01J37/32834 C23C16/4412 C23C16/4585 H01J37/32091

    Abstract: Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.

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