公开(公告)号：US20150270329A1

公开(公告)日：2015-09-24

申请号：US14663266

申请日：2015-03-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： AKIHIKO SAGARA ,  NORIHITO FUJINOKI ,  YUKI NOMURA ,  HARUHIKO HABUTA

IPC: H01L49/02 ,  H01L21/324 ,  H01L21/02 ,  H01L21/288

CPC classification number: H01L28/60 ,  H01G11/56 ,  H01G11/84 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/288 ,  H01M14/00 ,  Y02E60/13

Abstract: An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between the electricity storage layer and the second electrode. The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.

Abstract translation: 蓄电装置包括第一电极，第二电极，蓄电层和p型半导体层。 电存储层被放置在第一电极和第二电极之间。 蓄电层包含绝缘材料和n型半导体颗粒的混合物。 p型半导体层被放置在蓄电层和第二电极之间。 n型半导体粒子含有钛 - 铌复合氧化物和钛 - 钽复合氧化物中的至少一种。

公开(公告)号：US20160240845A1

公开(公告)日：2016-08-18

申请号：US14995856

申请日：2016-01-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NORIHITO FUJINOKI ,  HARUHIKO HABUTA

IPC: H01M4/48 ,  H01M4/04 ,  H01M10/0525 ,  H01M4/66 ,  H01M2/16

CPC classification number: H01M12/005 ,  H01M4/523 ,  H01M4/604 ,  H01M4/661

Abstract: An electrical storage device includes: a conductive anode collector; a conductive cathode collector; an anode between the anode collector and the cathode collector, the anode containing a mixture of an insulating material and an oxide of cerium; and a cathode between the cathode collector and the anode.

Abstract translation: 电存储装置包括：导电阳极集电器; 导电阴极集电体; 在阳极集电体和阴极集电体之间的阳极，阳极包含绝缘材料和铈的氧化物的混合物; 阴极和负极之间的阴极。

公开(公告)号：US20170084925A1

公开(公告)日：2017-03-23

申请号：US15245259

申请日：2016-08-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHIGEO YOSHII ,  NORIHITO FUJINOKI ,  HARUHIKO HABUTA

IPC: H01M4/66 ,  H01M10/054 ,  H01M10/02 ,  H01M10/0525

CPC classification number: H01M4/661 ,  H01M2/1646 ,  H01M4/663

Abstract: A charge storage device includes: a first electrode; a second electrode; a charge storage layer disposed between the first electrode and the second electrode; and an oxide layer disposed between the second electrode and the charge storage layer. The charge storage layer contains a mixture of semiconductor particles and insulator particles. An average particle size of the insulator particles is greater than or equal to the average particle size of the semiconductor particles.

公开(公告)号：US20150270580A1

公开(公告)日：2015-09-24

申请号：US14657206

申请日：2015-03-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HARUHIKO HABUTA ,  YUKI NOMURA ,  AKIHIKO SAGARA ,  NORIHITO FUJINOKI

IPC: H01M10/36 ,  H01M2/14 ,  H01M2/16

CPC classification number: H01M14/00 ,  H01G11/56 ,  H01G11/84 ,  Y02E60/13

Abstract: An electrical storage device includes a stack structure including a conductive first electrode layer, a conductive second electrode layer, a charging layer disposed between the first electrode layer and the second electrode layer, the charging layer including a mixture containing an insulating material and at least one metal oxide selected from the group consisting of niobium oxide, tantalum oxide and molybdenum oxide, and an electron barrier layer disposed between the charging layer and the second electrode layer.

Abstract translation: 一种电存储装置，包括：堆叠结构，包括导电第一电极层，导电第二电极层，设置在第一电极层和第二电极层之间的充电层，充电层包括含有绝缘材料和至少一个 选自氧化铌，氧化钽和氧化钼的金属氧化物以及设置在充电层和第二电极层之间的电子势垒层。