公开(公告)号：US20150340393A1

公开(公告)日：2015-11-26

申请号：US14714293

申请日：2015-05-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TOKUHIKO TAMAKI ,  JUNJI HIRASE ,  SHIGEO YOSHII

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643

Abstract: An imaging device includes a semiconductor substrate and at least one unit pixel cell provided to a surface of the semiconductor substrate. Each of the at least one unit pixel cell includes: a photoelectric converter including a pixel electrode and a photoelectric conversion layer located on the pixel electrode, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes a gate electrode and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. When viewed from a direction normal to the surface of the semiconductor substrate, at least a part of the gate electrode is located outside the pixel electrode.

Abstract translation: 成像装置包括半导体衬底和设置在半导体衬底的表面上的至少一个单位像素单元。 所述至少一个单位像素单元中的每一个包括：光电转换器，包括像素电极和位于所述像素电极上的光电转换层，所述光电转换器将入射光转换成电荷; 电荷检测晶体管，其包括半导体衬底的一部分并检测电荷; 以及包括栅电极并初始化光电转换器的电压的复位晶体管。 像素电极位于电荷检测晶体管的上方。 复位晶体管位于电荷检测晶体管和像素电极之间。 当从垂直于半导体衬底的表面的方向观察时，栅电极的至少一部分位于像素电极的外部。

公开(公告)号：US20150340401A1

公开(公告)日：2015-11-26

申请号：US14714292

申请日：2015-05-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHIGEO YOSHII ,  JUNJI HIRASE ,  DAISUKE UEDA

IPC: H01L27/146 ,  H01L49/02 ,  H01L29/861 ,  H01L29/786

CPC classification number: H01L29/861 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14665 ,  H01L27/307 ,  H01L28/40 ,  H01L29/7869 ,  H01L29/8613

Abstract: An imaging device includes a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer comprising a second semiconductor and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. A band gap of the second semiconductor is larger than a band gap of the first semiconductor.

Abstract translation: 一种成像装置包括：包括第一半导体的半导体衬底; 以及设置到半导体衬底的单位像素单元。 单位像素单元包括：光电转换器，包括像素电极和光电转换层，光电转换器将入射光转换成电荷; 电荷检测晶体管，其包括半导体衬底的一部分并检测电荷; 以及复位晶体管，其包括包括第二半导体的第一半导体层的至少一部分并初始化所述光电转换器的电压。 像素电极位于电荷检测晶体管的上方。 复位晶体管位于电荷检测晶体管和像素电极之间。 第二半导体的带隙大于第一半导体的带隙。

公开(公告)号：US20170084925A1

公开(公告)日：2017-03-23

申请号：US15245259

申请日：2016-08-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHIGEO YOSHII ,  NORIHITO FUJINOKI ,  HARUHIKO HABUTA

IPC: H01M4/66 ,  H01M10/054 ,  H01M10/02 ,  H01M10/0525

CPC classification number: H01M4/661 ,  H01M2/1646 ,  H01M4/663

Abstract: A charge storage device includes: a first electrode; a second electrode; a charge storage layer disposed between the first electrode and the second electrode; and an oxide layer disposed between the second electrode and the charge storage layer. The charge storage layer contains a mixture of semiconductor particles and insulator particles. An average particle size of the insulator particles is greater than or equal to the average particle size of the semiconductor particles.