公开(公告)号：US20210217786A1

公开(公告)日：2021-07-15

申请号：US17126145

申请日：2020-12-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KOSAKU SAEKI

IPC: H01L27/146 ,  H04N5/374

Abstract: An imaging apparatus includes: a semiconductor substrate which includes a charge accumulation portion containing an impurity of a first conductivity type; a contact plug which is connected to the charge accumulation portion, contains an impurity of the first conductivity type, and is not silicide; a first insulating film which includes an upper wall located above the contact plug; and a second insulating film which includes a portion located above the upper wall. A material of the second insulating film is different from a material of the first insulating film, and the first insulating film is thinner than the second insulating film.

公开(公告)号：US20160079297A1

公开(公告)日：2016-03-17

申请号：US14846947

申请日：2015-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  YOSHINORI TAKAMI ,  KOSAKU SAEKI ,  JUNJI HIRASE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14638 ,  H01L27/14665

Abstract: An imaging device including a unit pixel cell comprising: a semiconductor substrate including a first conductivity type region of a first conductivity type, a first and second impurity regions of a second conductivity type provided in the first conductivity type region; a photoelectric converter located above the semiconductor substrate; and a first transistor including a gate electrode and at least a part of the second impurity region as a source or a drain. The first impurity region is at least partially located in a surface of the semiconductor substrate and electrically connected to the photoelectric converter. The second impurity region is electrically connected to the photoelectric converter via the first impurity region and has an impurity concentration lower than that of the first impurity region. The second impurity region at least partially overlaps the gate electrode in a plan view.

Abstract translation: 一种包括单位像素单元的成像装置，包括：半导体衬底，包括第一导电类型的第一导电类型区域，设置在第一导电类型区域中的第二导电类型的第一和第二杂质区域; 位于半导体衬底上方的光电转换器; 以及第一晶体管，其包括栅极电极和至少一部分第二杂质区域作为源极或漏极。 第一杂质区域至少部分地位于半导体衬底的表面中并电连接到光电转换器。 第二杂质区经由第一杂质区与光电转换器电连接，杂质浓度低于第一杂质区的杂质浓度。 第二杂质区域在平面图中至少部分地与栅电极重叠。

公开(公告)号：US20230361138A1

公开(公告)日：2023-11-09

申请号：US18353942

申请日：2023-07-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KOSAKU SAEKI

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14605 ,  H01L27/14636 ,  H01L27/14643

Abstract: An imaging device includes a semiconductor substrate including a reference region, a first impurity region, a second impurity region, an element isolation region, and a specific region. The reference region contains an impurity of a first conductivity type. Each of the first impurity region and the second impurity region is located in the reference region and contains an impurity of a second conductivity type. The element isolation region is located between the first impurity region and the second impurity region in plan view, and contains an impurity of the first conductivity type. The specific region is located between a surface of the semiconductor substrate and the element isolation region in a direction perpendicular to the surface, and contains an impurity of the second conductivity type.