PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

    公开(公告)号:US20240266201A1

    公开(公告)日:2024-08-08

    申请号:US18432232

    申请日:2024-02-05

    Abstract: A plasma processing apparatus includes an ESC system having an ESC electrode, a plasma generator generating a first and a second plasma, a controller controlling the ESC system and the plasma generator such that a first or second processing with the first or second processing is performed on a substrate chucked to a stage, and an abnormality detector detecting abnormality, based on a plurality of parameters. The abnormality detector performs an abnormality detection during predetermined period DT immediately after switching between the first processing and the second processing, based on a first parameter including a monitoring information related to voltage V and/or current I applied to the ESC electrode and does not include a monitoring information related to pressure PR within a chamber, and performs an abnormality detection during other than predetermined period DT, based on a second parameter including the monitoring information related to pressure PR within the chamber.

Patent Agency Ranking