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公开(公告)号:US20240266201A1
公开(公告)日:2024-08-08
申请号:US18432232
申请日:2024-02-05
Inventor: Toshiyuki TAKASAKI , Shogo OKITA , Minghui ZHAO
IPC: H01L21/683 , H01J37/32
CPC classification number: H01L21/6833 , H01J37/32715 , H01J37/3299 , H01J2237/24564 , H01J2237/24585 , H01J2237/332 , H01J2237/334
Abstract: A plasma processing apparatus includes an ESC system having an ESC electrode, a plasma generator generating a first and a second plasma, a controller controlling the ESC system and the plasma generator such that a first or second processing with the first or second processing is performed on a substrate chucked to a stage, and an abnormality detector detecting abnormality, based on a plurality of parameters. The abnormality detector performs an abnormality detection during predetermined period DT immediately after switching between the first processing and the second processing, based on a first parameter including a monitoring information related to voltage V and/or current I applied to the ESC electrode and does not include a monitoring information related to pressure PR within a chamber, and performs an abnormality detection during other than predetermined period DT, based on a second parameter including the monitoring information related to pressure PR within the chamber.