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    IMAGING DEVICE
    1.
    发明申请
    IMAGING DEVICE 有权

    公开(公告)号：US20210258520A1

    公开(公告)日：2021-08-19

    申请号：US17120444

    申请日：2020-12-14

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： TSUTOMU KOBAYASHI

    IPC: H04N5/369 ,  H01L27/30 ,  H04N5/351

    Abstract: An imaging device includes: a pixel electrode; a counter electrode; a photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates signal charge; a charge accumulation portion that is connected to the pixel electrode to accumulate the signal charge; and a voltage supply circuit that alternately supplies a first voltage and a second voltage different from the first voltage to the counter electrode. The voltage supply circuit supplies a third voltage to the counter electrode in a period between a first period in which the first voltage is supplied and a second period that is subsequent to the first period and in which the second voltage is supplied. The second voltage is a voltage between the first voltage and the third voltage.

    IMAGE SENSOR, IMAGING DEVICE, AND IMAGING SYSTEM
    3.
    发明申请
    IMAGE SENSOR, IMAGING DEVICE, AND IMAGING SYSTEM 有权

    公开(公告)号：US20230085674A1

    公开(公告)日：2023-03-23

    申请号：US18058908

    申请日：2022-11-28

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： TAKAYUKI NISHITANI ,  SOGO OTA ,  YASUO MIYAKE ,  YOSHIHIRO SATO ,  KAZUKO NISHIMURA ,  TSUTOMU KOBAYASHI

    IPC: H01L27/148 ,  H01L27/146

    Abstract: An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

    IMAGING DEVICE
    4.
    发明申请
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20200213541A1

    公开(公告)日：2020-07-02

    申请号：US16663342

    申请日：2019-10-25

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： TSUTOMU KOBAYASHI

    IPC: H04N5/357 ,  H01L27/146

    Abstract: An imaging device includes a plurality of pixels arranged in a matrix, a first signal line connected to the first pixel; a second signal line connected to the second pixel; and a power-supply line connected to at least one of the plurality of pixels. The plurality of pixels includes a first pixel and a second pixel that are located in a same column. Two or more voltages that differ from each other are applied to the power-supply line. When a distance between the power-supply line and the first signal line is denoted by d1, and a distance between the power-supply line and the second signal line is denoted by d2, d1 d2 is satisfied in a second cross-section that is orthogonal to the column direction and that is different from the first cross-section.

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