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公开(公告)号：US20240214700A1
公开(公告)日：2024-06-27
申请号：US18599298
申请日：2024-03-08
Inventor： YOSHIAKI SATOU , YASUO MIYAKE , YUSUKE OKADA , KAZUKO NISHIMURA
IPC: H04N25/47 , H04N25/772
CPC classification number: H04N25/47 , H04N25/772
Abstract: An imaging device is provided with a pixel array section including multiple pixels arranged in a matrix of rows and columns, and a column signal processor. The multiple pixels include multiple imaging pixels that each output a pixel signal corresponding to incident light and multiple reference pixels which are aligned in the column direction in at least two columns and which each output a reset signal corresponding to the output signal at reset of each of the multiple first pixels. The column signal processor outputs the difference between the pixel signal outputted by one imaging pixel from among the multiple imaging pixels and a reference signal based on the reset signals outputted by at least two reference pixels, from among the multiple reference pixels, located in the same row as the one imaging pixel.
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公开(公告)号：US20230085674A1
公开(公告)日：2023-03-23
申请号：US18058908
申请日：2022-11-28
Inventor： TAKAYUKI NISHITANI , SOGO OTA , YASUO MIYAKE , YOSHIHIRO SATO , KAZUKO NISHIMURA , TSUTOMU KOBAYASHI
IPC: H01L27/148 , H01L27/146
Abstract: An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.
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公开(公告)号：US20210185249A1
公开(公告)日：2021-06-17
申请号：US17185845
申请日：2021-02-25
Inventor： MASASHI MURAKAMI , YASUNORI INOUE , YOSHIHIRO SATO , KAZUKO NISHIMURA
IPC: H04N5/343 , H04N5/374 , H01L27/146
Abstract: An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.
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4.发明申请公开(公告)号：US20180343373A1
公开(公告)日：2018-11-29
申请号：US15985951
申请日：2018-05-22
Inventor： YOSHIAKI SATOU , KAZUKO NISHIMURA , YASUO MIYAKE , OSAMU SHIBATA , HIROSHI IWAI
Abstract: An imaging device includes: an imager that includes first pixels having sensitivity to visible light and second pixels having sensitivity to non-visible light, the imager acquiring first image data from the first pixels and acquiring second image data from the second pixels, each of the first image data and the second image data containing an image of an object that displays a code through non-visible light; and an image processor. The image processor performs a correction process including a process of multiplying at least either the first image data or the second image data by a correction factor, generates third image data from a difference between a pair of image data obtained by the correction process, and extracts the code on the basis of the third image data.
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公开(公告)号：US20180205896A1
公开(公告)日：2018-07-19
申请号：US15867986
申请日：2018-01-11
Inventor： KAZUKO NISHIMURA , SANSHIRO SHISHIDO , HIDENARI KANEHARA , TAKAYOSHI YAMADA , MASASHI MURAKAMI , YASUNORI INOUE
CPC classification number: H04N5/35518 , H01L27/14643 , H01L27/14665 , H01L29/42372 , H04N5/355 , H04N5/35563 , H04N5/363 , H04N5/378
Abstract: An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.
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Patent Agency Ranking
公开(公告)号：US20160190188A1
公开(公告)日：2016-06-30
申请号：US14972153
申请日：2015-12-17
Inventor： MASASHI MURAKAMI , KAZUKO NISHIMURA , YUTAKA ABE , YOSHIYUKI MATSUNAGA , YOSHIHIRO SATO , JUNJI HIRASE
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H01L51/42
Abstract: An imaging device includes: a unit pixel cell comprising: a photoelectric converter generating an electric signal and comprising a first and second electrodes and a photoelectric conversion film located therebetween, the first electrode being located on a light receiving side of the photoelectric conversion film, a signal detection circuit detecting the electric signal and comprising a first transistor and a second transistor that are connected to the second electrode, the first transistor amplifying the electric signal, and a capacitor circuit comprising a first capacitor and a second capacitor having a capacitance value larger than that of the first capacitor that are serially connected to each other, the capacitor circuit being provided between the second electrode and a reference voltage; and a feedback circuit comprising the first transistor and an inverting amplifier and negatively feeding back the electric signal to the second transistor via the first transistor and the inverting amplifier.
Abstract translation: 一种成像装置，包括：单位像素单元，包括：光电转换器，其生成电信号，并且包括位于其间的第一和第二电极和光电转换膜，所述第一电极位于所述光电转换膜的光接收侧， 信号检测电路检测电信号，并包括连接到第二电极的第一晶体管和第二晶体管，放大电信号的第一晶体管，以及电容电路，包括第一电容器和电容值大于的电容值的第二电容器 所述第一电容器彼此串联连接，所述电容器电路设置在所述第二电极和参考电压之间; 以及包括第一晶体管和反相放大器的反馈电路，并且经由第一晶体管和反相放大器将电信号负反馈给第二晶体管。
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公开(公告)号：US20240171877A1
公开(公告)日：2024-05-23
申请号：US18346757
申请日：2023-07-03
Inventor： JUNJI HIRASE , TAKAYOSHI YAMADA , KAZUKO NISHIMURA
IPC: H04N25/77 , H04N23/667 , H04N25/57 , H04N25/60
CPC classification number: H04N25/77 , H04N23/667 , H04N25/57 , H04N25/60
Abstract: An imaging apparatus includes: a photoelectric converter that generates charge through photoelectric conversion; a charge accumulator in which the charge is accumulated; and a metal-oxide-semiconductor capacitor including a first terminal, a second terminal, a gate, an oxide layer, and at least one semiconductor region. During exposure, the first terminal is electrically connected to the charge accumulator. The gate is electrically connected to the first terminal. The at least one semiconductor region is electrically connected to the second terminal. The oxide layer is located between the gate and the at least one semiconductor region.
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公开(公告)号：US20200304735A1
公开(公告)日：2020-09-24
申请号：US16815257
申请日：2020-03-11
Inventor： YUTAKA ABE , KAZUKO NISHIMURA , MASASHI MURAKAMI
Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.
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公开(公告)号：US20190393259A1
公开(公告)日：2019-12-26
申请号：US16441144
申请日：2019-06-14
Inventor： HIDENARI KANEHARA , YUSUKE OKADA , SANSHIRO SHISHIDO , KAZUKO NISHIMURA
IPC: H01L27/146
Abstract: An imaging device includes: a first pixel and a second pixel that are arranged along a first direction and each include a photoelectric converter, a charge accumulator, a first transistor one of a source and a drain of which is connected to the charge accumulator, and a second transistor a gate of which is connected to the charge accumulator; a first line and a second line that each extend along the first direction; a first voltage supply circuit configured to generate a voltage between a first voltage turning on the first transistor of the first pixel and a second voltage turning off the first transistor of the first pixel; and a second voltage supply circuit configured to generate a voltage between a fourth voltage turning on the first transistor of the second pixel and a fifth voltage turning off the first transistor of the second pixel.
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公开(公告)号：US20190306442A1
公开(公告)日：2019-10-03
申请号：US16352367
申请日：2019-03-13
Inventor： MASASHI MURAKAMI , KAZUKO NISHIMURA , YASUO MIYAKE , YASUNORI INOUE
IPC: H04N5/355
Abstract: An imaging device including: a photoelectric converter including first and second electrodes and a conversion layer therebetween; a voltage supplier; an outputter outputting a signal indicating the potential of the second electrode; and a detector detecting the signal level, in which the change rate of the conversion efficiency of the photoelectric converter with respect to a bias voltage, applied between the electrodes, when the bias voltage is in a first range is greater than when the bias voltage is in a second range greater than the first range, and the voltage supplier, when the detected level is less than a first threshold, causes the potential difference between the electrodes to become a first difference, and, when the detected level is greater than or equal to a second threshold greater than or equal to the first threshold, causes the potential difference to become a second difference greater than the first difference.
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