公开(公告)号：US20230262364A1

公开(公告)日：2023-08-17

申请号：US18302863

申请日：2023-04-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SOGO OTA ,  JUNJI HIRASE

IPC: H04N25/78 ,  H04N25/771

CPC classification number: H04N25/78 ,  H04N25/771

Abstract: An imaging device includes a first photoelectric converter that converts light into a charge, a first charge storage that stores the charge, a first capacitor, an output circuit electrically connected to the first capacitor, and a first interposing transistor including a gate electrode, a source, and a drain. A potential of the first charge storage, a potential of the gate electrode, and a potential of one of the source and the drain are continuously the same during a control cycle period. By turning on the first interposing transistor, the first charge storage and the first capacitor are electrically connected.

公开(公告)号：US20240306407A1

公开(公告)日：2024-09-12

申请号：US18661367

申请日：2024-05-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SOGO OTA ,  YOSHIHIRO SATO

IPC: H10K39/32 ,  H10K39/38

CPC classification number: H10K39/32 ,  H10K39/38

Abstract: An imaging device includes pixels and pixel electrodes. Each of the pixels includes a semiconductor substrate, a photoelectric conversion layer, and a corresponding pixel electrode out of the pixel electrodes. The photoelectric conversion layer converts light into electric charges. The corresponding pixel electrode collects the electric charges. A pitch of the pixel electrodes is greater than a pitch of the pixels.

公开(公告)号：US20230085674A1

公开(公告)日：2023-03-23

申请号：US18058908

申请日：2022-11-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAYUKI NISHITANI ,  SOGO OTA ,  YASUO MIYAKE ,  YOSHIHIRO SATO ,  KAZUKO NISHIMURA ,  TSUTOMU KOBAYASHI

IPC: H01L27/148 ,  H01L27/146

Abstract: An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

公开(公告)号：US20230009806A1

公开(公告)日：2023-01-12

申请号：US17933091

申请日：2022-09-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： AKIO NAKAJUN ,  SOGO OTA

IPC: H01L27/146 ,  H01L51/44 ,  H01L27/30

Abstract: An imaging device includes a photoelectric converter and a microlens. The microlens is provided above the photoelectric conversion layer. In a cross-section of the imaging device, an upper surface of the microlens forms a contour line in which a first curve projecting upward is connected to a second curve projecting downward at a first inflection point located between the first curve and the second curve. In this cross-section, a curvature radius of the second curve at a lower end of the second curve is larger than a distance in a thickness direction of the microlens from an upper end of the first curve to the first inflection point.