Class-D power converter
    1.
    发明授权

    公开(公告)号:US12074516B2

    公开(公告)日:2024-08-27

    申请号:US17758404

    申请日:2020-12-17

    CPC classification number: H02M3/156 H02M1/08 H03F3/217

    Abstract: A switch circuit is configured of a first semiconductor element and a second semiconductor element connected in series, and receives a DC voltage of 100 V or more. The drive circuit causes the first semiconductor element or the second semiconductor element to perform a switching operation. The isolated power supply circuit converts a predetermined power supply voltage into an isolated first power supply voltage, and outputs the first power supply voltage to the drive circuit. The isolation signal converter converts a first signal of 6 MHz or more into an isolated first drive signal, and outputs the first drive signal to the drive circuit. The single substrate mounts the isolated power supply circuit and the isolation signal converter. Both the first semiconductor element and the second semiconductor element are wide bandgap semiconductor elements.

    SWITCHING CIRCUIT
    3.
    发明申请

    公开(公告)号:US20210258008A1

    公开(公告)日:2021-08-19

    申请号:US17308805

    申请日:2021-05-05

    Abstract: A switching circuit includes: a normally-off junction field-effect GaN transistor including source, drain, and gate terminals; a drive device of one output type electrically connected to the gate terminal; a first rectifier, between the source terminal and the gate terminal, including an anode on a source terminal side and a cathode on a gate terminal side; a capacitor between a cathode side of the first rectifier and the drive device; a first resistor between the capacitor and the drive device; a second resistor, one side of the second resistor being connected to the drive device, another side of the second resistor being connected between the cathode side of the first rectifier and the capacitor; and a second rectifier including an anode on a capacitor side and a cathode on a drive device side. No resistor is provided between the cathode side of the second rectifier and the drive device.

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