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公开(公告)号：US20150216035A1
公开(公告)日：2015-07-30
申请号：US14404102
申请日：2014-02-28
Inventor： Takashi Uno , Kazuhiro Yahata
CPC classification number: H05K1/0237 , H01L23/043 , H01L23/047 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/49175 , H01L2225/06548 , H01L2924/3011 , H01L2924/30111 , H05K1/18 , H05K2201/10166 , H05K2201/10689 , H01L2924/00014 , H01L2924/00 , H01L2224/49111
Abstract: A semiconductor device is provided that is inexpensively manufactured with variation in high-frequency characteristics suppressed. Internal matching circuit boards are disposed on at least one signal transmission path of an input-side signal transmission path between an input terminal and a semiconductor element and an output-side signal transmission path between the semiconductor element and an output terminal and is provided for matching at least between output impedance of an external circuit connected to the input terminal and input impedance of the semiconductor device or between input impedance of an external circuit connected to the output terminal and output impedance of the semiconductor device, and components are electrically connected by at least one wire causing a change exceeding an allowable value in high-frequency characteristics of the semiconductor device due to a change in wire length and are disposed in contact with each other inside a package.
Abstract translation: 提供了一种低成本地制造的半导体器件，其抑制了高频特性的变化。 内部匹配电路板设置在输入端和半导体元件之间的输入侧信号传输路径的至少一个信号传输路径和半导体元件与输出端之间的输出侧信号传输路径之间，并被提供用于匹配 至少在连接到输入端子的外部电路的输出阻抗和半导体器件的输入阻抗之间或连接到输出端子的外部电路的输入阻抗和半导体器件的输出阻抗之间，并且部件至少电连接 一根导线由于导线长度的变化导致超过半导体器件的高频特性的容许值的变化，并且在封装内彼此接触。
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公开(公告)号：US09668338B2
公开(公告)日：2017-05-30
申请号：US14404102
申请日：2014-02-28
Inventor： Takashi Uno , Kazuhiro Yahata
IPC: H05K1/18 , H05K1/02 , H01L23/66 , H05K7/00 , H01L23/02 , H01L23/48 , H01L23/52 , H01L23/043 , H01L23/047
CPC classification number: H05K1/0237 , H01L23/043 , H01L23/047 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/49175 , H01L2225/06548 , H01L2924/3011 , H01L2924/30111 , H05K1/18 , H05K2201/10166 , H05K2201/10689 , H01L2924/00014 , H01L2924/00 , H01L2224/49111
Abstract: A semiconductor device is provided that is inexpensively manufactured with variation in high-frequency characteristics suppressed. Internal matching circuit boards are disposed on at least one signal transmission path of an input-side signal transmission path between an input terminal and a semiconductor element and an output-side signal transmission path between the semiconductor element and an output terminal and is provided for matching at least between output impedance of an external circuit connected to the input terminal and input impedance of the semiconductor device or between input impedance of an external circuit connected to the output terminal and output impedance of the semiconductor device, and components are electrically connected by at least one wire causing a change exceeding an allowable value in high-frequency characteristics of the semiconductor device due to a change in wire length and are disposed in contact with each other inside a package.
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公开(公告)号：US11749578B2
公开(公告)日：2023-09-05
申请号：US17431657
申请日：2020-01-14
Inventor： Koji Takahashi , Kazuhiro Yahata , Yoshihisa Minami , Hiroki Akashi , Shinya Miyazaki
IPC: H01L23/367 , H01L23/00 , H01L25/065
CPC classification number: H01L23/3672 , H01L24/05 , H01L24/09 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L2224/04042 , H01L2224/05144 , H01L2224/09515 , H01L2224/45144 , H01L2224/48155 , H01L2924/014 , H01L2924/13091 , H01L2924/30107
Abstract: The semiconductor module includes: a heat dissipation board including first to third wiring patterns; a first metal plate on the first wiring pattern, a second metal plate on the second wiring pattern, a first semiconductor chip and a first intermediate board which are on the first metal plate, a second semiconductor chip and a second intermediate board which are on the second metal plate. A first metal film on the first intermediate board is electrically connected to the first semiconductor chip and the second metal plate, and a second metal film on the second intermediate board is electrically connected to the second semiconductor chip and the third wiring pattern.
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公开(公告)号：US12074516B2
公开(公告)日：2024-08-27
申请号：US17758404
申请日：2020-12-17
Inventor： Hiroki Akashi , Takuya Ishii , Yoshihito Kawakami , Kazuhiro Yahata , Takeshi Azuma , Yoshihisa Minami
Abstract: A switch circuit is configured of a first semiconductor element and a second semiconductor element connected in series, and receives a DC voltage of 100 V or more. The drive circuit causes the first semiconductor element or the second semiconductor element to perform a switching operation. The isolated power supply circuit converts a predetermined power supply voltage into an isolated first power supply voltage, and outputs the first power supply voltage to the drive circuit. The isolation signal converter converts a first signal of 6 MHz or more into an isolated first drive signal, and outputs the first drive signal to the drive circuit. The single substrate mounts the isolated power supply circuit and the isolation signal converter. Both the first semiconductor element and the second semiconductor element are wide bandgap semiconductor elements.
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