公开(公告)号：US20190181291A1

公开(公告)日：2019-06-13

申请号：US16279359

申请日：2019-02-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tsuyoshi Takahama ,  Wataru Shinohara ,  Yoshinari Ichihashi ,  Naoki Yoshimura

IPC: H01L31/0747 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/20 ,  H01L21/268

Abstract: A method for manufacturing a solar cell, including: a step for irradiating a semiconductor substrate to cause the surface to become amorphous and to form an intrinsic amorphous layer, a first conductivity-type layer, and a second conductivity-type layer; and a step for introducing hydrogen into the intrinsic amorphous layer, the first conductivity-type layer, and the second conductivity-type layer.

公开(公告)号：US10026853B2

公开(公告)日：2018-07-17

申请号：US14724992

申请日：2015-05-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshinari Ichihashi ,  Motohide Kai

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/0747

Abstract: A semiconductor substrate of any one of a first conductivity type and a second conductivity type includes a first main surface and a second main surface. A first semiconductor layer of the first conductivity type is provided on the first main surface. A second semiconductor layer of the second conductivity type is provided on the first main surface. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. An insulating layer comprises silicon nitride and is arranged between the first semiconductor layer and the second semiconductor layer in an overlap region where the second semiconductor layer is provided above the first semiconductor layer. An anti-diffusion film is arranged between the insulating layer and the first semiconductor layer and is configured to prevent nitrogen from diffusing from the insulating layer into the first semiconductor layer.