公开(公告)号：US20190027619A1

公开(公告)日：2019-01-24

申请号：US16137039

申请日：2018-09-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Motohide Kai

IPC: H01L31/0216 ,  H01L31/0747

Abstract: A solar cell includes an n-type crystalline silicon wafer, a first silicon nitride layer formed over a light receiving surface of the wafer, an n-type amorphous silicon layer formed over a first region of a back surface, a second silicon nitride layer formed over a part of the n-type amorphous silicon layer, and a p-type amorphous silicon layer formed over a second region of the back surface of the n-type crystalline silicon wafer and over the second silicon nitride layer. The second silicon nitride layer has a higher index of refraction than the first silicon nitride layer.

公开(公告)号：US10026853B2

公开(公告)日：2018-07-17

申请号：US14724992

申请日：2015-05-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshinari Ichihashi ,  Motohide Kai

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/0747

Abstract: A semiconductor substrate of any one of a first conductivity type and a second conductivity type includes a first main surface and a second main surface. A first semiconductor layer of the first conductivity type is provided on the first main surface. A second semiconductor layer of the second conductivity type is provided on the first main surface. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. An insulating layer comprises silicon nitride and is arranged between the first semiconductor layer and the second semiconductor layer in an overlap region where the second semiconductor layer is provided above the first semiconductor layer. An anti-diffusion film is arranged between the insulating layer and the first semiconductor layer and is configured to prevent nitrogen from diffusing from the insulating layer into the first semiconductor layer.

公开(公告)号：US10014432B2

公开(公告)日：2018-07-03

申请号：US15054129

申请日：2016-02-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tomonori Ueyama ,  Motohide Kai ,  Masaki Shima

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/068 ,  H01L31/0376

CPC classification number: H01L31/1804 ,  H01L31/03762 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/186 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).