公开(公告)号：US09647038B2

公开(公告)日：2017-05-09

申请号：US15195861

申请日：2016-06-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshiya Moriyama ,  Hiromasa Fujimoto ,  Kosaku Saeki ,  Nobuyoshi Takahashi

IPC: H01L21/00 ,  H01L27/30 ,  H01L27/146 ,  H01L21/265 ,  H01L29/08 ,  H01L29/423 ,  H01L21/324

CPC classification number: H01L27/307 ,  H01L21/265 ,  H01L21/324 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/0847 ,  H01L29/42376

Abstract: A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.

公开(公告)号：US09406722B2

公开(公告)日：2016-08-02

申请号：US14554027

申请日：2014-11-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiya Moriyama ,  Hiromasa Fujimoto ,  Kosaku Saeki ,  Nobuyoshi Takahashi

IPC: H01L29/08 ,  H01L51/00 ,  H01L27/30 ,  H01L27/146 ,  H01L21/265 ,  H01L29/423 ,  H01L21/324

CPC classification number: H01L27/307 ,  H01L21/265 ,  H01L21/324 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/0847 ,  H01L29/42376

Abstract: A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.

Abstract translation: 固体摄像器件包括：半导体衬底; 形成在所述半导体基板上的像素单元; 以及在所述像素单元的周围形成在所述半导体基板上的外围电路单元，所述像素单元包括：将入射光转换为电荷的光电转换膜; 以及保持电荷的浮动扩散，外围电路单元包括具有栅极和两个源极和漏极扩散区的晶体管，并且两个源极和漏极扩散区具有比浮动扩散的杂质浓度更高的杂质浓度。