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公开(公告)号：US09887231B2
公开(公告)日：2018-02-06
申请号：US14555153
申请日：2014-11-26
Inventor： Kentaro Nakanishi , Junji Hirase , Kosaku Saeki , Yoshinori Takami , Takeshi Hidaka , Tokuhiko Tamaki
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/1461 , H01L27/14612 , H01L27/14689
Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.
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公开(公告)号：US11450706B2
公开(公告)日：2022-09-20
申请号：US16847704
申请日：2020-04-14
Inventor： Kosaku Saeki , Seiji Nishiwaki , Kenji Narumi
IPC: H01L27/146 , G01J3/10 , G01J3/28
Abstract: A structural body includes a first dielectric layer and a second dielectric layer which is in contact with the first dielectric layer and which has a refractive index different from that of the first dielectric layer. The second dielectric layer includes at least two dielectric films different in hydrogen concentration from each other. The interface between the first dielectric layer and the second dielectric layer has periodic first irregularities.
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公开(公告)号：US09735204B2
公开(公告)日：2017-08-15
申请号：US14553559
申请日：2014-11-25
Inventor： Ryota Sakaida , Nobuyoshi Takahashi , Kosaku Saeki
IPC: H01L27/30 , H01L27/146 , H01L21/768 , H01L21/285 , H01L23/485 , H01L51/44
CPC classification number: H01L27/307 , H01L21/28525 , H01L21/76889 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L27/14612 , H01L27/14643 , H01L51/441 , H01L2924/0002 , H01L2924/00
Abstract: Each imaging pixel provided in a solid-state imaging device includes a charge accumulation part which is a diffusion region formed in a substrate, a gate electrode formed lateral to the charge accumulation part on the substrate, an insulating film formed on the charge accumulation part, and a contact plug connected to the charge accumulation part so as to penetrate the insulating film and made of semiconductor. The contact plug is, at a lower part thereof, embedded in the insulating film, and is, at an upper part thereof, exposed through the insulating film. Silicide is formed on the upper part of the contact plug, and the charge accumulation part and the gate electrode are covered by the insulating film.
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公开(公告)号：US09647038B2
公开(公告)日：2017-05-09
申请号：US15195861
申请日：2016-06-28
Inventor： Yoshiya Moriyama , Hiromasa Fujimoto , Kosaku Saeki , Nobuyoshi Takahashi
IPC: H01L21/00 , H01L27/30 , H01L27/146 , H01L21/265 , H01L29/08 , H01L29/423 , H01L21/324
CPC classification number: H01L27/307 , H01L21/265 , H01L21/324 , H01L27/14612 , H01L27/14636 , H01L27/14665 , H01L27/14687 , H01L27/14689 , H01L29/0847 , H01L29/42376
Abstract: A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.
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Patent Agency Ranking
公开(公告)号：US09406722B2
公开(公告)日：2016-08-02
申请号：US14554027
申请日：2014-11-25
Inventor： Yoshiya Moriyama , Hiromasa Fujimoto , Kosaku Saeki , Nobuyoshi Takahashi
IPC: H01L29/08 , H01L51/00 , H01L27/30 , H01L27/146 , H01L21/265 , H01L29/423 , H01L21/324
CPC classification number: H01L27/307 , H01L21/265 , H01L21/324 , H01L27/14612 , H01L27/14636 , H01L27/14665 , H01L27/14687 , H01L27/14689 , H01L29/0847 , H01L29/42376
Abstract: A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.
Abstract translation: 固体摄像器件包括：半导体衬底; 形成在所述半导体基板上的像素单元; 以及在所述像素单元的周围形成在所述半导体基板上的外围电路单元，所述像素单元包括：将入射光转换为电荷的光电转换膜; 以及保持电荷的浮动扩散，外围电路单元包括具有栅极和两个源极和漏极扩散区的晶体管，并且两个源极和漏极扩散区具有比浮动扩散的杂质浓度更高的杂质浓度。
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公开(公告)号：US12087789B2
公开(公告)日：2024-09-10
申请号：US18342423
申请日：2023-06-27
Inventor： Kosaku Saeki
IPC: H01L27/146 , H04N25/76 , H04N25/75
CPC classification number: H01L27/14612 , H01L27/1461 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H04N25/76 , H04N25/75
Abstract: An imaging apparatus including a semiconductor substrate which includes a charge accumulation portion containing an impurity of a first conductivity type; a contact plug which is connected to the charge accumulation portion, contains an impurity of the first conductivity type, and is not silicide; a first insulating film which includes an upper wall located above the contact plug; and a second insulating film which includes a portion located above the upper wall. A material of the second insulating film is different from a material of the first insulating film.
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公开(公告)号：US11735608B2
公开(公告)日：2023-08-22
申请号：US17126145
申请日：2020-12-18
Inventor： Kosaku Saeki
IPC: H01L27/146 , H04N25/76 , H04N25/75
CPC classification number: H01L27/14612 , H01L27/1461 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H04N25/76 , H04N25/75
Abstract: An imaging apparatus includes: a semiconductor substrate which includes a charge accumulation portion containing an impurity of a first conductivity type; a contact plug which is connected to the charge accumulation portion, contains an impurity of the first conductivity type, and is not silicide; a first insulating film which includes an upper wall located above the contact plug; and a second insulating film which includes a portion located above the upper wall. A material of the second insulating film is different from a material of the first insulating film, and the first insulating film is thinner than the second insulating film.
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公开(公告)号：US20200243597A1
公开(公告)日：2020-07-30
申请号：US16847704
申请日：2020-04-14
Inventor： Kosaku Saeki , Seiji Nishiwaki , Kenji Narumi
IPC: H01L27/146 , G01J3/10 , G01J3/28
Abstract: A structural body includes a first dielectric layer and a second dielectric layer which is in contact with the first dielectric layer and which has a refractive index different from that of the first dielectric layer. The second dielectric layer includes at least two dielectric films different in hydrogen concentration from each other. The interface between the first dielectric layer and the second dielectric layer has periodic first irregularities.
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公开(公告)号：US09711558B2
公开(公告)日：2017-07-18
申请号：US14846947
申请日：2015-09-07
Inventor： Yoshihiro Sato , Yoshinori Takami , Kosaku Saeki , Junji Hirase
IPC: H01L27/00 , H01L31/062 , H01L27/146
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14638 , H01L27/14665
Abstract: An imaging device including a unit pixel cell comprising: a semiconductor substrate including a first conductivity type region of a first conductivity type, a first and second impurity regions of a second conductivity type provided in the first conductivity type region; a photoelectric converter located above the semiconductor substrate; and a first transistor including a gate electrode and at least a part of the second impurity region as a source or a drain. The first impurity region is at least partially located in a surface of the semiconductor substrate and electrically connected to the photoelectric converter. The second impurity region is electrically connected to the photoelectric converter via the first impurity region and has an impurity concentration lower than that of the first impurity region. The second impurity region at least partially overlaps the gate electrode in a plan view.
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