摘要:
A process for the conversion of boric acid to dry boron oxide by thermal decomposition is described. Boron oxide may be produced as a powder or in the form of pellets, and in either form may additionally be enclosed in a gas permeable container to control particulate contamination. Applications are further disclosed for the use of boron oxide formed by this process to remove water from evacuated chambers and from gases. Specific applications include removing water from both inert gases and reactive gases, especially halogen and halogenated gases. Further applications directed to optical amplifiers and gas purifiers are also discussed.
摘要:
A process for the conversion of boric acid to dry boron oxide by thermal decomposition is described. Boron oxide may be produced as a powder or in the form of pellets, and in either form may additionally be enclosed in a gas permeable container to control particulate contamination. Applications are further disclosed for the use of boron oxide formed by this process to remove water from evacuated chambers and from gases. Specific applications include removing water from both inert gases and reactive gases, especially halogen and halogenated gases. Further applications directed to optical amplifiers and gas purifiers are also discussed.
摘要:
A method for removing oxygen from ammonia at low temperature is described. In one embodiment, oxygen contaminated ammonia is contacted with a getter material that includes iron and manganese that sorbs oxygen to yield ammonia that is substantially oxygen free. In one embodiment, the process of contacting ammonia with the getter material takes place at about 25° C. In another embodiment the weight ratio between iron and manganese is about 7:1. In another embodiment, the getter material is dispersed on an inert support of specific surface greater than 100 m2/g. In one embodiment, impure ammonia is contacted with getter material including iron and manganese that sorbs oxygen and with a drying agent that absorbs water to yield deoxygenated anhydrous ammonia. In yet another embodiment, an apparatus consisting of a gas inlet, gas purification chamber and gas outlet that deoxygenates ammonia when charged with getter material that includes iron and manganese is described. In one embodiment, getter material and drying agent are mixed together inside the gas purification chamber. In another aspect a method for producing semiconductor devices with high purity ammonia is described.
摘要:
A method for removing oxygen from ammonia at low temperature is described. In one embodiment, oxygen contaminated ammonia is contacted with a getter material that includes iron and manganese that sorbs oxygen to yield ammonia that is substantially oxygen free. In one embodiment, the process of contacting ammonia with the getter material takes place at about 25° C. In another embodiment the weight ratio between iron and manganese is about 7:1. In another embodiment, the getter material is dispersed on an inert support of specific surface greater than 100 m2/g. In one embodiment, impure ammonia is contacted with getter material including iron and manganese that sorbs oxygen and with a drying agent that absorbs water to yield deoxygenated anhydrous ammonia. In yet another embodiment, an apparatus consisting of a gas inlet, gas purification chamber and gas outlet that deoxygenates ammonia when charged with getter material that includes iron and manganese is described. In one embodiment, getter material and drying agent are mixed together inside the gas purification chamber. In another aspect a method for producing semiconductor devices with high purity ammonia is described.
摘要:
A method for removing oxygen from ammonia at low temperature is described. In one embodiment, oxygen contaminated ammonia is contacted with a getter material that includes iron and manganese that sorbs oxygen to yield ammonia that is substantially oxygen free. In one embodiment, the process of contacting ammonia with the getter material takes place at about 25.degree. C. In another embodiment the weight ratio between iron and manganese is about 7:1. In another embodiment, the getter material is dispersed on an inert support of specific surface greater than 100 m.sup.2/ g. In one embodiment, impure ammonia is contacted with getter material including iron and manganese that sorbs oxygen and with a drying agent that absorbs water to yield deoxygenated anhydrous ammonia. In yet another embodiment, an apparatus consisting of a gas inlet, gas purification chamber and gas outlet that deoxygenates ammonia when charged with getter material that includes iron and manganese is described. In one embodiment, getter material and drying agent are mixed together inside the gas purification chamber. In another aspect a method for producing semiconductor devices with high purity ammonia is described.
摘要:
A method for removing oxygen from ammonia at low temperature is described. In one embodiment, oxygen contaminated ammonia is contacted with a getter material that includes iron and manganese that sorbs oxygen to yield ammonia that is substantially oxygen free. In one embodiment, the process of contacting ammonia with the getter material takes place at about 25° C. In another embodiment the weight ratio between iron and manganese is about 7:1. In another embodiment, the getter material is dispersed on an inert support of specific surface greater than 100 m2/g. In one embodiment, impure ammonia is contacted with getter material including iron and manganese that sorbs oxygen and with a drying agent that absorbs water to yield deoxygenated anhydrous ammonia. In yet another embodiment, an apparatus consisting of a gas inlet, gas purification chamber and gas outlet that deoxygenates ammonia when charged with getter material that includes iron and manganese is described. In one embodiment, getter material and drying agent are mixed together inside the gas purification chamber. In another aspect a method for producing semiconductor devices with high purity ammonia is described.
摘要:
A process for the purification of organometallic compounds or heteroatomic organic compounds from oxygen, water and from the compounds deriving from the reaction of water and oxygen with the organometallic or heteroatomic compounds whose purification is sought, comprising the operation of contacting the organometallic or heteroatomic compound to be purified in the liquid state or in form of vapor, pure or in a carrier gas, with a hydrogenated getter alloy, and optionally also with one or more gas sorber materials selected among palladium on porous supports and a mixture of iron and manganese supported on zeolites.
摘要:
A gas purification system includes a gas purification unit and one or more safety devices. The gas purification unit includes an enclosure containing a purification material that exhibits an exothermic reaction when exposed to certain gas contaminants. The gas purification unit also has an inlet coupled to an unpurified gas inlet line and an outlet coupled to a purified gas outlet line. A safety device can be coupled either to the unpurified gas input line or the purified output line, or both, and develops an alarm signal when gas contaminants exceed a given concentration level for a period of time.
摘要:
A method for carrying out analyses of a gas comprising one or more species Si, Sj, . . . , Sn by using of ion mobility spectrometry includes in carrying out two subsequent analyses in different conditions and comparing the results of these two analyses. The different conditions in the two analyses are such as to modify either the residence time of the ions corresponding to the species in the reaction zone or in the drift zone of the ion mobility spectrometer, or, selectively, the concentration of at least one of these ions.
摘要:
An apparatus is described for the removal of impurity gases such as O.sub.2, CH.sub.4, CO, CO.sub.2 and H.sub.2 from impure inert gases such as rare gases and N.sub.2. The apparatus comprises an impure inert gas inlet, a housing containing first and second gas sorbing materials and a purified gas outlet. The first gas sorbing material may be a Zr--V--Fe getter alloy if the gas to be purified is a rare gas, whereas it may be a Zr--Fe alloy if the gas to be purified is N.sub.2. The second gas sorbing material is a Zr--Al alloy which ensures that the purified inert gas has an extremely low level of hydrogen. A process for the removal of impurity gases from inert gases and ensuring an extremely low level of hydrogen in the purified gas is also described.