公开(公告)号：US20240153762A1

公开(公告)日：2024-05-09

申请号：US18283728

申请日：2022-03-11

申请人： Paragraf Limited

发明人： Sebastian DIXON ,  Jaspreet KAINTH ,  Robert JAGT

IPC分类号： H01L21/02

CPC分类号： H01L21/02527 ,  H01L21/02008 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02488 ,  H01L21/02502

摘要： A wafer for the CVD growth of uniform graphene and method of manufacture thereof There is provided a wafer for the CVD growth of uniform graphene at a temperature in excess of 700° C., the wafer comprising in order: a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, wherein the insulating layer is a silicon nitride and/or aluminium nitride layer, and wherein the barrier layer has a constant thickness of 50 nm or less and provides a growth surface for the CVD growth of uniform graphene.