公开(公告)号：US20110306295A1

公开(公告)日：2011-12-15

申请号：US13130365

申请日：2009-11-26

申请人： Paul Butler ,  David Miles ,  Robin Wilson

发明人： Paul Butler ,  David Miles ,  Robin Wilson

IPC分类号： H04B5/00 ,  H02M7/02

CPC分类号： G05F1/613 ,  H02J5/005 ,  H02J7/025 ,  H02J50/10 ,  H04B5/0037 ,  H04B5/0081

摘要： A NFC enabled device to couple inductively to the H field of an RF signal and a regulator to regulate a voltage derived from an RF signal inductively coupled to the inductive coupler. The regulator has at least one voltage controlled impedance having a switch on voltage. A regulator controller provides a control voltage to each voltage controlled impedance such as that the control voltage is not less than the switch on voltage of the voltage controlled impedance.

摘要翻译： 一种启用NFC的设备，用于将电感耦合到RF信号的H场和调节器，以调节从感应耦合到电感耦合器的RF信号导出的电压。 调节器具有至少一个具有接通电压的压控阻抗。 调节器控制器为每个电压控制的阻抗提供控制电压，例如控制电压不小于压控阻抗的开启电压。

公开(公告)号：US09182771B2

公开(公告)日：2015-11-10

申请号：US13130365

申请日：2009-11-26

申请人： Paul Butler ,  David Miles ,  Robin Wilson

发明人： Paul Butler ,  David Miles ,  Robin Wilson

IPC分类号： H04B5/00 ,  G05F1/613 ,  H02J5/00

CPC分类号： G05F1/613 ,  H02J5/005 ,  H02J7/025 ,  H02J50/10 ,  H04B5/0037 ,  H04B5/0081

摘要： A NFC enabled device to couple inductively to the H field of an RF signal and a regulator to regulate a voltage derived from an RF signal inductively coupled to the inductive coupler. The regulator has at least one voltage controlled impedance having a switch on voltage. A regulator controller provides a control voltage to each voltage controlled impedance such as that the control voltage is not less than the switch on voltage of the voltage controlled impedance.

摘要翻译： 一种启用NFC的设备，用于将电感耦合到RF信号的H场和调节器，以调节从感应耦合到电感耦合器的RF信号导出的电压。 调节器具有至少一个具有接通电压的压控阻抗。 调节器控制器为每个电压控制的阻抗提供控制电压，例如控制电压不小于压控阻抗的开启电压。

公开(公告)号：US08188787B2

公开(公告)日：2012-05-29

申请号：US11883039

申请日：2006-01-25

申请人： Robin Wilson ,  David Miles

发明人： Robin Wilson ,  David Miles

IPC分类号： H03D1/00

CPC分类号： H03D1/18

摘要： A demodulator for demodulating a modulated signal has a peak detector (206) with an input (100) coupled to receive the modulated signal and an output (207) to supply a peak detector output signal. The peak detector has a charge storer (314) coupled to the peak detector output so that the peak detector output signal is provided by a voltage across the charge storer (314) and a comparator (313) having a first comparator input coupled to the peak detector input to receive the modulated signal and a second comparator input coupled to the peak detector output to receive the peak detector output signal. The comparator (313) provides a comparison signal representing a comparison between the voltage of the modulated signal and the peak detector output signal. A charging controller (315, 316 and 318) charges the charge storer (314) so as to increase the output voltage when the comparator (313) provides a first signal indicating that the voltage of the modulated signal is higher than the voltage of the peak detector output signal and discharges the charge storer (314) so as to decrease the output voltage when the comparator (313) provides a second signal indicating that the voltage of the modulated signal is lower than the voltage of the peak detector output signal.

摘要翻译： 用于解调调制信号的解调器具有峰值检测器（206），其具有耦合以接收调制信号的输入（100）和输出（207）以提供峰值检测器输出信号。 峰值检测器具有耦合到峰值检测器输出的电荷存储器（314），使得峰值检测器输出信号由电荷存储器（314）两端的电压和比较器（313）提供，该比较器具有耦合到峰值的第一比较器输入端 检测器输入以接收调制信号，以及耦合到峰值检测器输出的第二比较器输入以接收峰值检测器输出信号。 比较器（313）提供表示调制信号的电压与峰值检测器输出信号之间的比较的比较信号。 当比较器（313）提供指示调制信号的电压高于峰值电压的第一信号时，充电控制器（315,316和318）对电荷存储器（314）充电，以增加输出电压 检测器输出信号，并且当比较器（313）提供指示调制信号的电压低于峰值检测器输出信号的电压的第二信号时，使电荷存储器（314）放电以便降低输出电压。

公开(公告)号：US20080143435A1

公开(公告)日：2008-06-19

申请号：US11883039

申请日：2006-01-25

申请人： Robin Wilson ,  David Miles

发明人： Robin Wilson ,  David Miles

IPC分类号： H03D3/00 ,  H03K5/1532

CPC分类号： H03D1/18

摘要： A demodulator for demodulating a modulated signal has a peak detector (206) with an input (100) coupled to receive the modulated signal and an output (207) to supply a peak detector output signal. The peak detector has a charge storer (314) coupled to the peak detector output so that the peak detector output signal is provided by a voltage across the charge storer (314) and a comparator (313) having a first comparator input coupled to the peak detector input to receive the modulated signal and a second comparator input coupled to the peak detector output to receive the peak detector output signal. The comparator (313) provides a comparison signal representing a comparison between the voltage of the modulated signal and the peak detector output signal. A charging controller (315, 316 and 318) charges the charge storer (314) so as to increase the output voltage when the comparator (313) provides a first signal indicating that the voltage of the modulated signal is higher than the voltage of the peak detector output signal and discharges the charge storer (314) so as to decrease the output voltage when the comparator (313) provides a second signal indicating that the voltage of the modulated signal is lower than the voltage of the peak detector output signal.

摘要翻译： 用于解调调制信号的解调器具有峰值检测器（206），其具有耦合以接收调制信号的输入（100）和输出（207）以提供峰值检测器输出信号。 峰值检测器具有耦合到峰值检测器输出的电荷存储器（314），使得峰值检测器输出信号由电荷存储器（314）两端的电压和比较器（313）提供，该比较器具有耦合到峰值的第一比较器输入端 检测器输入以接收调制信号，以及耦合到峰值检测器输出的第二比较器输入以接收峰值检测器输出信号。 比较器（313）提供表示调制信号的电压与峰值检测器输出信号之间的比较的比较信号。 当比较器（313）提供指示调制信号的电压高于峰值电压的第一信号时，充电控制器（315,316和318）对电荷存储器（314）充电，以增加输出电压 检测器输出信号，并且当比较器（313）提供指示调制信号的电压低于峰值检测器输出信号的电压的第二信号时，使电荷存储器（314）放电以便降低输出电压。

公开(公告)号：US20090011706A1

公开(公告)日：2009-01-08

申请号：US12283535

申请日：2008-09-12

申请人： Robin Wilson ,  David Miles

发明人： Robin Wilson ,  David Miles

IPC分类号： H04B5/00

CPC分类号： H04B5/02 ,  H04B5/0037 ,  H04B5/0075

摘要： A near field RF communicator has an inductive coupler (10) to enable inductive coupling with a magnetic field of an RF signal. A demodulator (102) extracts modulation from an inductively coupled magnetic field. A power provider (109) provides a first power supply for the communicator independent of any inductively coupled signal while a power deriver derives a second power supply from an RF signal inductively coupled to the antenna. A regulator (206; 1302) regulates a voltage supplied by at least one of the first and second power supplies on the basis of a comparison with a reference voltage. A modulator (M) is provided to modulate an inductively coupled magnetic field with data to be communicated via the inductive coupling. In an example, a regulator controller is provided to prevent operation of the regulator in the event of a magnetic field amplitude below a predetermined level or the presence of modulation.

摘要翻译： 近场RF通信器具有电感耦合器（10），以使得能够与RF信号的磁场进行电感耦合。 解调器（102）从电感耦合磁场提取调制。 电力供应商（109）提供独立于任何电感耦合信号的通信器的第一电源，而功率提取器从感应耦合到天线的RF信号导出第二电源。 调节器（206; 1302）基于与参考电压的比较来调节由第一和第二电源中的至少一个提供的电压。 提供了一种调制器（M），用于通过电感耦合来传送具有数据的电感耦合磁场。 在一个示例中，提供调节器控制器以在磁场振幅低于预定水平或存在调制的情况下防止调节器的操作。

公开(公告)号：US07910479B2

公开(公告)日：2011-03-22

申请号：US12411933

申请日：2009-03-26

申请人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

发明人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC分类号： H01L21/44

CPC分类号： H01L27/1446 ,  H01L21/76898 ,  H01L31/18

摘要： A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a second conductivity proximate the second main surface. A via is formed in the substrate which extends to a first depth position relative to the first main surface. The via has a first aspect ratio. Generally simultaneously with forming the via, an isolation trench is formed in the substrate spaced apart from the via which extends to a second depth position relative to the first main surface. The isolation trench has a second aspect ratio different from the first aspect ratio.

摘要翻译： 一种制造光电二极管阵列的方法包括提供具有彼此相对的第一和第二主表面的半导体衬底。 半导体衬底具有靠近第一主表面的第一导电的第一层和靠近第二主表面的第二导电的第二层。 在衬底中形成通孔，该通孔相对于第一主表面延伸到第一深度位置。 通孔具有第一宽高比。 通常在形成通孔的同时，在与通孔间隔开的基板中形成隔离沟槽，其相对于第一主表面延伸到第二深度位置。 隔离沟槽具有与第一宽高比不同的第二宽高比。

公开(公告)号：US20100291869A1

公开(公告)日：2010-11-18

申请号：US12743208

申请日：2008-11-14

申请人： Robin Wilson

发明人： Robin Wilson

IPC分类号： H04B5/00

CPC分类号： H02H7/22 ,  G05F1/46 ,  G06K7/10237 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H04B5/00 ,  H04B5/0031 ,  H04B5/0037 ,  H04B5/0075 ,  Y02D70/166

摘要： A near field RF communicator has an inductive coupler (223) to enable inductive coupling with a magnetic field of an RF signal; a rectifier (213,214,215,216) to rectify an AC voltage derived from an RF signal inductively coupled to the inductive coupler (223); and a regulator (209,210,211,220,221,900) to regulate a voltage derived from an RF signal inductively coupled to the inductive coupler, the regulator having a voltage-controlled impedance (210, 211) and a regulator controller (209) to provide a control voltage for the voltage controlled impedance and to vary the control voltage in dependence upon a current flowing through the voltage controlled impedance (210, 211). To prevent the voltage regulator from drawing excess current and energy from an RF field in which the communicator is present the voltage regulator is controlled to provide a chosen impedance characteristic.

摘要翻译： 近场RF通信器具有电感耦合器（223），以使得能够与RF信号的磁场进行电感耦合; 整流器（213,214,215,216），用于对从感应耦合到电感耦合器（223）的RF信号导出的AC电压进行整流; 以及调节器（209,210,211,22,221,900），用于调节从感应耦合到所述电感耦合器的RF信号导出的电压，所述调节器具有压控阻抗（210,211）和调节器控制器（209），以提供所述电压的控制电压 并且根据流经电压控制阻抗的电流（210,211）来改变控制电压。 为了防止电压调节器从存在通信器的RF场抽取过多的电流和能量，控制电压调节器以提供所选择的阻抗特性。

公开(公告)号：US07528458B2

公开(公告)日：2009-05-05

申请号：US11681576

申请日：2007-03-02

申请人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

发明人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC分类号： H01L31/075 ,  H01L31/00

CPC分类号： H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14683 ,  H01L31/105

摘要： A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active frontside area forms at least 95 percent of the cell total frontside area. A method of forming the photodiode is also disclosed.

摘要翻译： 光敏面积比例增加到光不敏感区域的光电二极管包括具有背面和感光前侧表面的半导体。 半导体包括具有第一导电性的第一有源层，具有与第一导电性相反的第二导电性的第二有源层和分离第一和第二有源层的本征层。 布置多个隔离沟以将光电二极管分成多个单元。 每个细胞具有包括对光敏感的细胞活性前方区域和对光不敏感的细胞非活动的前侧区域的总前方区域。 细胞活动前方区域形成至少95％的细胞总前方区域。 还公开了一种形成光电二极管的方法。

公开(公告)号：US20080315345A1

公开(公告)日：2008-12-25

申请号：US12203995

申请日：2008-09-04

申请人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

发明人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC分类号： H01L21/302 ,  H01L23/58

CPC分类号： H01L21/78

摘要： A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

摘要翻译： 绝缘体上半导体（SOI）晶片包括具有彼此相对的第一和第二主表面的半导体衬底。 电介质层设置在半导体衬底的第一主表面的至少一部分上。 器件层具有第一主表面和第二主表面。 器件层的第二主表面设置在与半导体衬底相对的电介质层的表面上。 在设备层的第一主表面上限定多个预期的管芯区域。 多个预期的模具区域彼此分离。 多个裸片存取沟槽从第二主表面形成在半导体衬底中。 多个管芯存取沟槽中的每一个通常设置在多个预期管芯区域中的至少一个相应的一个的下方。

公开(公告)号：US20080315247A1

公开(公告)日：2008-12-25

申请号：US12191035

申请日：2008-08-13

申请人： Conor Brogan ,  Cormac MacNamara ,  Hugh J. Griffin ,  Robin Wilson

发明人： Conor Brogan ,  Cormac MacNamara ,  Hugh J. Griffin ,  Robin Wilson

IPC分类号： H01L29/00

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  H01L29/0634 ,  H01L29/66143 ,  H01L29/872

摘要： A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer of a second conductivity disposed on the first device layer, a third device layer of the first conductivity disposed on the second device layer and a fourth device layer of the second conductivity disposed on the third device layer. A trench is formed in the multi-layer device stack. A mesa is defined by the trench. The mesa has first and second sidewalls. A first anode/cathode layer is disposed on a first sidewall of the multi-layer device stack, and a second anode/cathode layer is disposed on the second sidewall of the multi-layer device stack.

摘要翻译： 接合晶片半导体器件包括半导体衬底，设置在半导体衬底的第一主表面上的掩埋氧化物层和多层器件堆叠。 多层器件堆叠包括设置在掩埋氧化物层上的第一导电体的第一器件层，设置在第一器件层上的第二导电体的第二器件层，设置在第二器件上的第一导电体的第三器件层 层和设置在第三器件层上的第二导电体的第四器件层。 在多层器件堆叠中形成沟槽。 台面由沟槽定义。 台面具有第一和第二侧壁。 第一阳极/阴极层设置在多层器件堆叠的第一侧壁上，第二阳极/阴极层设置在多层器件堆叠的第二侧壁上。