FORMATION OF CLOSE-PACKED SPHERE ARRAYS IN V-SHAPED GROOVES
    1.
    发明申请
    FORMATION OF CLOSE-PACKED SPHERE ARRAYS IN V-SHAPED GROOVES 有权
    在V型格栅中形成紧密包装的球面阵列

    公开(公告)号:US20100239819A1

    公开(公告)日:2010-09-23

    申请号:US12795318

    申请日:2010-06-07

    IPC分类号: B32B3/28 B32B3/10

    摘要: The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

    摘要翻译: 本发明涉及将球形形态嵌段共聚物自身组装成基材的V形槽。 虽然球形形态嵌段共聚物通常以体积形成体心立方体系(bcc)球阵列,但是V形槽促进形成良好排列的面心立方体(fcc)球阵列。 在一个实施例中,fcc球阵列的(111)面平行于V形槽的成角度的侧壁。 fcc球阵列的(100)平面平行于衬底的顶表面,并且可以在相邻球体之间显示正方形对称。 该方形对称性与在球形畴的单层中看到的六边形对称不同,并且是用于光刻应用的有用几何形状,特别是在半导体应用中使用的那些。

    Formation of close-packed sphere arrays in V-shaped grooves
    2.
    发明授权
    Formation of close-packed sphere arrays in V-shaped grooves 有权
    在V形槽中形成紧密堆积的球形阵列

    公开(公告)号:US07790045B1

    公开(公告)日:2010-09-07

    申请号:US11854872

    申请日:2007-09-13

    IPC分类号: B44C1/22 B05D3/00

    摘要: The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

    摘要翻译: 本发明涉及将球形形态嵌段共聚物自身组装成基材的V形槽。 虽然球形形态嵌段共聚物通常以体积形成体心立方体系(bcc)球阵列,但是V形槽促进形成良好排列的面心立方体(fcc)球阵列。 在一个实施例中,fcc球阵列的(111)面平行于V形槽的成角度的侧壁。 fcc球阵列的(100)平面平行于衬底的顶表面,并且可以在相邻球体之间显示正方形对称。 该方形对称性与在球形畴的单层中看到的六边形对称不同,并且是用于光刻应用的有用几何形状,特别是在半导体应用中使用的那些。

    Formation of close-packed sphere arrays in V-shaped grooves
    3.
    发明授权
    Formation of close-packed sphere arrays in V-shaped grooves 有权
    在V形槽中形成紧密堆积的球形阵列

    公开(公告)号:US08163374B2

    公开(公告)日:2012-04-24

    申请号:US12795318

    申请日:2010-06-07

    IPC分类号: B32B3/28 B32B3/30

    摘要: The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

    摘要翻译: 本发明涉及将球形形态嵌段共聚物自身组装成基材的V形槽。 虽然球形形态嵌段共聚物通常以体积形成体心立方体系(bcc)球阵列,但是V形槽促进形成良好排列的面心立方体(fcc)球阵列。 在一个实施例中,fcc球阵列的(111)面平行于V形槽的成角度的侧壁。 fcc球阵列的(100)平面平行于衬底的顶表面,并且可以在相邻球体之间显示正方形对称。 该方形对称性与在球形畴的单层中看到的六边形对称不同,并且是用于光刻应用的有用几何形状,特别是在半导体应用中使用的那些。

    METHOD FOR NANOPATTERNING BASED ON SELF ASSEMBLY OF A TRIBLOCK TERPOLYMER
    4.
    发明申请
    METHOD FOR NANOPATTERNING BASED ON SELF ASSEMBLY OF A TRIBLOCK TERPOLYMER 审中-公开
    基于自制组装方法进行纳豆化的方法

    公开(公告)号:US20120070627A1

    公开(公告)日:2012-03-22

    申请号:US12884600

    申请日:2010-09-17

    IPC分类号: B32B3/10 B05D3/00 B82Y30/00

    摘要: Nanolithography and nanoscale device features based on a self-assembled film comprising an ABC triblock terpolymer disposed on a substrate surface are provided. The self-assembled film has a controlled pattern of features over the entire film. Each feature comprises block A, block B, or block C of the ABC triblock terpolymer. One or more blocks (A, B, or C) of the self-assembled film can be transformed by, for example, being removed, to provide a particular pattern geometry for nanolithography.

    摘要翻译: 提供了基于设置在基板表面上的包含ABC三嵌段三元共聚物的自组装膜的纳米光刻和纳米级器件特征。 自组装膜在整个膜上具有受控的特征图案。 每个特征包括ABC三嵌段三元共聚物的嵌段A,嵌段B或嵌段C。 自组装膜的一个或多个嵌段(A,B或C)可以通过例如被去除来转化,以提供用于纳米光刻的特定图案几何形状。