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    Orientation-controlled self-assembled nanolithography using a block copolymer
    3.
    发明授权
    Orientation-controlled self-assembled nanolithography using a block copolymer 有权
    使用嵌段共聚物的取向控制的自组装纳米光刻技术

    公开(公告)号：US08147914B2

    公开(公告)日：2012-04-03

    申请号：US12137016

    申请日：2008-06-11

    申请人： Yeon Sik Jung ,  Caroline A. Ross

    发明人： Yeon Sik Jung ,  Caroline A. Ross

    IPC分类号： B05D3/02

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  Y10T428/31 ,  C08L2666/02

    摘要： Disclosed is a structure made of a trench patterned substrate having a pre-determined trench period and a pre-determined mesa to trench width ratio, and a block copolymer on top of the trench patterned substrate. The block copolymer has at least an organic block and a silicon-containing block, wherein the block copolymer can have either perpendicular or parallel cylinders. The structure is annealed under a pre-determined vapor pressure for a predetermined annealing time period, wherein the pre-determined trench period, the pre-determined mesa to trench width ratio, the predetermined vapor pressure and the predetermined annealing time period are chosen such that cylinders formed in the block copolymer are either perpendicular or parallel with respect to the trench-patterned substrate. A method is also described to form the above-mentioned structure.

    摘要翻译： 公开了由沟槽图案化衬底制成的结构，其具有预定的沟槽周期和预定的台面与沟槽宽度比，以及在沟槽图案化衬底的顶部上的嵌段共聚物。 嵌段共聚物至少具有有机嵌段和含硅嵌段，其中嵌段共聚物可以具有垂直或平行的圆柱体。 该结构在预定的蒸汽压力下退火预定的退火时间段，其中预定沟槽周期，预定的台面与沟槽宽度比，预定的蒸汽压力和预定的退火时间间隔被选择为使得 形成在嵌段共聚物中的圆柱体相对于沟槽图案化的衬底垂直或平行。 还描述了形成上述结构的方法。

    GUIDED SELF-ASSEMBLY OF BLOCK COPOLYMER LINE STRUCTURES FOR INTEGRATED CIRCUIT INTERCONNECTS
    4.
    发明申请
    GUIDED SELF-ASSEMBLY OF BLOCK COPOLYMER LINE STRUCTURES FOR INTEGRATED CIRCUIT INTERCONNECTS 有权
    用于集成电路互连的块状共聚物线结构的指导自组装

    公开(公告)号：US20120009390A1

    公开(公告)日：2012-01-12

    申请号：US12885051

    申请日：2010-09-17

    申请人： Joel K. W. Yang ,  Karl K. Berggren ,  Yeon Sik Jung ,  Caroline A. Ross

    发明人： Joel K. W. Yang ,  Karl K. Berggren ,  Yeon Sik Jung ,  Caroline A. Ross

    IPC分类号： B32B5/00 ,  G03F7/20

    CPC分类号： G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24669

    摘要： Complex self-assembled patterns can be created using a sparse template and local changes to the shape or distribution of the posts of the template to direct pattern generation of block copolymer. The post spacing in the template is formed commensurate with the equilibrium periodicity of the block copolymer, which controls the orientation of the linear features. Further, the posts can be arranged such that the template occupies only a few percent of the area of the final self-assembled patterns. Local aperiodic features can be introduced by changing the period or motif of the lattice or by adding guiding posts. According to one embodiment, an array of carefully spaced and shaped posts, prepared by electron-beam patterning of an inorganic resist, can be used to template complex patterns in a cylindrical-morphology block copolymer. These complex self-assembled patterns can form a mask used in fabrication processes of arbitrary structures such as interconnect layouts.

    摘要翻译： 可以使用稀疏模板创建复杂的自组装图案，并且对模板的柱的形状或分布进行局部变化以引导嵌段共聚物的图案生成。 模板中的柱间距与嵌段共聚物的平衡周期相一致，嵌段共聚物控制线性特征的取向。 此外，柱可以被布置成使得模板仅占最终自组装图案的面积的百分之几。 可以通过改变晶格的周期或图案或添加引导柱来引入局部非周期特征。 根据一个实施例，可以使用通过无机抗蚀剂的电子束图案化制备的仔细间隔和形状的柱的阵列来模制圆柱形形态嵌段共聚物中的复杂图案。 这些复杂的自组装图案可以形成用于诸如互连布局的任意结构的制造工艺中的掩模。

    Method of fabricating a textured magnetic storage disk
    5.
    发明授权
    Method of fabricating a textured magnetic storage disk 失效
    制造纹理磁存储盘的方法

    公开(公告)号：US5871621A

    公开(公告)日：1999-02-16

    申请号：US313704

    申请日：1994-09-27

    申请人： Caroline A. Ross

    发明人： Caroline A. Ross

    IPC分类号： G11B5/82 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  C23C14/34 ,  B05D5/12

    CPC分类号： G11B5/7325 ,  G11B5/8404

    摘要： A magnetic disk storage medium (10) includes a smooth non-magnetic substrate (11) having surface roughened by sputter-depositing a continuous nonmagnetic rough thin film ("texture film") (14) over the substrate. The sputter conditions and composition of the texture film (14) are chosen to give a desired roughness and areal density of asperities. A sputtered adhesion layer (12) and/or a sputtered capping layer (15) are included to control the growth of the texture film and to improve its mechanical properties, respectively. A non-magnetic underlayer, a magnetic layer and a protective layer are then sputtered sequentially over the roughened substrate.

    摘要翻译： 磁盘存储介质（10）包括通过在衬底上溅射沉积连续的非磁性粗糙薄膜（“纹理膜”）（14）而具有粗糙表面的平滑非磁性衬底（11）。 选择纹理膜（14）的溅射条件和组成以产生所需的粗糙度和粗糙度的面密度。 包括溅射粘附层（12）和/或溅射覆盖层（15）以分别控制纹理膜的生长并提高其机械性能。 然后将非磁性底层，磁性层和保护层依次溅射在粗糙化的基底上。

    Wheatstone-bridge magnetoresistive device
    6.
    发明授权
    Wheatstone-bridge magnetoresistive device 有权
    惠斯通电桥磁阻器件

    公开(公告)号：US08415755B2

    公开(公告)日：2013-04-09

    申请号：US11860737

    申请日：2007-09-25

    申请人： Fernando J. Castano ,  Caroline A. Ross

    发明人： Fernando J. Castano ,  Caroline A. Ross

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： G11C11/16 ,  Y10T29/49075

    摘要： A magnetoresistive Wheatstone-bridge structure includes a magnetoresistive ring structure. The magnetoresistive ring structure includes a first magnetic layer comprising a ferromagnetic material. A second magnetic layer also includes a ferromagnetic material. A non-magnetic spacer is positioned between the first magnetic layer and the second magnetic layer. A vacant open region is positioned in the center region of the magnetoresistive ring structure. A plurality of magnetic states can exist in either the first magnetic layer or second magnetic layer. Furthermore, the magnetoresistive Wheatstone-bridge structure includes a plurality of voltage and current contacts arranged symmetrically upon the magnetoresistive ring structure. The magnetic state of the ring is detected by measuring its resistance.

    摘要翻译： 磁阻惠斯通电桥结构包括磁阻环结构。 磁阻环结构包括包含铁磁材料的第一磁性层。 第二磁性层还包括铁磁材料。 非磁性间隔物位于第一磁性层和第二磁性层之间。 空位开放区位于磁阻环结构的中心区域。 多个磁状态可存在于第一磁性层或第二磁性层中。 此外，磁阻惠斯通电桥结构包括对称地布置在磁阻环结构上的多个电压和电流触点。 通过测量其阻力来检测环的磁状态。

    Guided self-assembly of block copolymer line structures for integrated circuit interconnects
    7.
    发明授权
    Guided self-assembly of block copolymer line structures for integrated circuit interconnects 有权
    用于集成电路互连的嵌段共聚物线结构的引导自组装

    公开(公告)号：US08309278B2

    公开(公告)日：2012-11-13

    申请号：US12885051

    申请日：2010-09-17

    申请人： Joel K. W. Yang ,  Karl K. Berggren ,  Yeon Sik Jung ,  Caroline A. Ross

    发明人： Joel K. W. Yang ,  Karl K. Berggren ,  Yeon Sik Jung ,  Caroline A. Ross

    IPC分类号： G03F1/50 ,  H01L21/31 ,  H01L21/469

    CPC分类号： G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24669

    摘要： Complex self-assembled patterns can be created using a sparse template and local changes to the shape or distribution of the posts of the template to direct pattern generation of block copolymer. The post spacing in the template is formed commensurate with the equilibrium periodicity of the block copolymer, which controls the orientation of the linear features. Further, the posts can be arranged such that the template occupies only a few percent of the area of the final self-assembled patterns. Local aperiodic features can be introduced by changing the period or motif of the lattice or by adding guiding posts. According to one embodiment, an array of carefully spaced and shaped posts, prepared by electron-beam patterning of an inorganic resist, can be used to template complex patterns in a cylindrical-morphology block copolymer. These complex self-assembled patterns can form a mask used in fabrication processes of arbitrary structures such as interconnect layouts.

    摘要翻译： 可以使用稀疏模板创建复杂的自组装图案，并且对模板的柱的形状或分布进行局部变化以引导嵌段共聚物的图案生成。 模板中的柱间距与嵌段共聚物的平衡周期相一致，嵌段共聚物控制线性特征的取向。 此外，柱可以被布置成使得模板仅占最终自组装图案的面积的百分之几。 可以通过改变晶格的周期或图案或添加引导柱来引入局部非周期特征。 根据一个实施例，可以使用通过无机抗蚀剂的电子束图案化制备的仔细间隔和形状的柱的阵列来模制圆柱形形态嵌段共聚物中的复杂图案。 这些复杂的自组装图案可以形成用于诸如互连布局的任意结构的制造工艺中的掩模。

    FORMATION OF CLOSE-PACKED SPHERE ARRAYS IN V-SHAPED GROOVES
    10.
    发明申请
    FORMATION OF CLOSE-PACKED SPHERE ARRAYS IN V-SHAPED GROOVES 有权
    在V型格栅中形成紧密包装的球面阵列

    公开(公告)号：US20100239819A1

    公开(公告)日：2010-09-23

    申请号：US12795318

    申请日：2010-06-07

    申请人： Peng-Wei Chuang ,  Caroline A. Ross

    发明人： Peng-Wei Chuang ,  Caroline A. Ross

    IPC分类号： B32B3/28 ,  B32B3/10

    CPC分类号： B81C1/00031 ,  B81C2201/0149 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  Y10T428/2457 ,  Y10T428/2462

    摘要： The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

    摘要翻译： 本发明涉及将球形形态嵌段共聚物自身组装成基材的V形槽。 虽然球形形态嵌段共聚物通常以体积形成体心立方体系（bcc）球阵列，但是V形槽促进形成良好排列的面心立方体（fcc）球阵列。 在一个实施例中，fcc球阵列的（111）面平行于V形槽的成角度的侧壁。 fcc球阵列的（100）平面平行于衬底的顶表面，并且可以在相邻球体之间显示正方形对称。 该方形对称性与在球形畴的单层中看到的六边形对称不同，并且是用于光刻应用的有用几何形状，特别是在半导体应用中使用的那些。