公开(公告)号：US20180171152A1

公开(公告)日：2018-06-21

申请号：US15574949

申请日：2016-05-25

Applicant: ÉCOLE POLYTECHNIQUE FÉDÉRALE DE LAUSANNE (EPFL) EPFL-TTO

Inventor： Holger FRAUENRATH ,  Stephen SCHRETTL ,  Bjoern SCHULTE ,  Yves LETERRIER

IPC: C09D4/00 ,  C09D5/08 ,  B05D1/02 ,  B05D1/18 ,  B05D1/28 ,  B05D3/06

CPC classification number: C09D4/00 ,  B05D1/02 ,  B05D1/18 ,  B05D1/28 ,  B05D3/067 ,  C09D5/00 ,  C09D5/08 ,  G03F7/165

Abstract: The invention relates to a method for the preparation of a coating comprising at least one coating layer on a solid substrate, said method comprising the steps of a, providing monomers of the type R—(N)x-(L)m-(C≡C)n-(L′]o(N′)y—R′, wherein R is a head moiety, R′ is a tail moiety, (C≡C)n is an oligoyne moiety, L and L′ are linker moieties, N and N′ independently are branched or unbranched optionally substituted C1-C25 alkyl moieties optionally containing 1 to 5 heteroatoms, x, m, o, and y are independently 0 or 1, n is 4 to 12, and wherein said head moiety allows for an interaction with the surface of said solid substrate; b. bringing said monomers into contact with said solid substrate wherein said interaction of said head moieties of said monomers with the surface of said solid substrate induces at least a part of said monomers to align in a defined manner thereby forming a film on said surface and bringing said oligoyne moieties of said monomers into close contact with each other; c. inducing a reaction between oligoyne moieties by providing an external stimulus so as to at least partially cross-link said aligned monomers, thereby forming a coating layer on said solid substrate. The invention further relates to a coating obtainable according to the method of the invention, the use of a coating obtainable according to the method of the invention, a solid substrate comprising a coating obtainable according to the invention and the use of the solid substrate.

公开(公告)号：US09772554B2

公开(公告)日：2017-09-26

申请号：US15052922

申请日：2016-02-25

Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Phillip D. Hustad ,  Peter Trefonas, III ,  Valeriy V. Ginzburg ,  Bongkeun Kim ,  Glenn H. Fredrickson

IPC: G03F7/004 ,  G03F7/40 ,  G03F7/16 ,  H01L21/027 ,  C09D153/00 ,  C09D5/00 ,  C09D7/12 ,  G03F7/20 ,  G03F7/00 ,  H01L21/3065 ,  H01L21/02 ,  B82Y40/00 ,  B82Y10/00 ,  C08F293/00 ,  C08F299/00 ,  C08L53/00

CPC classification number: G03F7/165 ,  B82Y10/00 ,  B82Y40/00 ,  C08F293/005 ,  C08F299/00 ,  C08F2438/01 ,  C08L53/00 ,  C09D5/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/3065 ,  C08L51/06

Abstract: Disclosed herein is a pattern forming method comprising providing a substrate devoid of a layer of a brush polymer; disposing upon the substrate a composition comprising a block copolymer comprising a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other; and an additive polymer where the additive polymer comprises a bottlebrush polymer; where the bottlebrush polymer comprises a polymeric chain backbone and a grafted polymer that are bonded to each other; and where the bottlebrush polymer comprises a polymer that is chemically and structurally the same as one of the polymers in the block copolymer or where the bottlebrush polymer comprises a polymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition to facilitate domain separation between the first polymer and the second polymer.

公开(公告)号：US09768059B1

公开(公告)日：2017-09-19

申请号：US15092693

申请日：2016-04-07

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Teddie P. Magbitang ,  Daniel P. Sanders ,  Kristin Schmidt ,  Ankit Vora

IPC: G03F7/004 ,  H01L21/768 ,  C08G81/02 ,  C23F1/00 ,  G03F7/20 ,  G03F7/40 ,  G03F7/00 ,  G03F7/16 ,  G03F7/32 ,  B82Y40/00 ,  H01L21/3065 ,  H01L21/027 ,  B82Y10/00 ,  H01L21/02

CPC classification number: H01L21/0274 ,  B82Y10/00 ,  B82Y40/00 ,  C08G81/027 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/165 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0271 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/76816

Abstract: High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.

公开(公告)号：US20170123316A1

公开(公告)日：2017-05-04

申请号：US15297526

申请日：2016-10-19

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Huaxing Zhou ,  Vipul Jain ,  Jin Wuk Sung ,  Peter Trefonas, III ,  Phillip D. Hustad ,  Mingqi Li

IPC: G03F7/038 ,  G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/004 ,  C08F293/00

CPC classification number: G03F7/038 ,  B81C2201/0149 ,  C08F293/00 ,  C08F293/005 ,  C08F2438/03 ,  C08L53/00 ,  C09D153/00 ,  C09D183/10 ,  G03F7/0045 ,  G03F7/11 ,  G03F7/162 ,  G03F7/165 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/31144

Abstract: Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.

公开(公告)号：US20170076940A1

公开(公告)日：2017-03-16

申请号：US15067951

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yusuke KASAHARA ,  Hideki KANAI

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/165 ,  G03F7/2016 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/033 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31144

Abstract: According to one embodiment, a pattern forming method includes forming a resist pattern on an under-layer, forming a recessed portion in the under-layer by etching the under-layer using the resist pattern as a mask, slimming the resist pattern, forming a neutral layer having an affinity for first and second polymers on a region of the under-layer not covered with the slimmed resist pattern, forming a block copolymer film containing the first polymer and the second polymer on the slimmed resist pattern and the neutral layer, and forming a microphase separation pattern comprising a first portion formed of the first polymer and a second portion formed of the second polymer by applying microphase separation processing to the block copolymer film.

Abstract translation: 根据一个实施例，图案形成方法包括在下层上形成抗蚀剂图案，通过使用抗蚀剂图案作为掩模蚀刻底层，在下层中形成凹陷部分，使抗蚀剂图案减薄，形成 在未被薄的抗蚀剂图案覆盖的下层的区域上对第一和第二聚合物具有亲和性的中性层，在纤薄的抗蚀剂图案和中性层上形成含有第一聚合物和第二聚合物的嵌段共聚物膜，以及 形成微相分离图案，其包含由第一聚合物形成的第一部分和由第二聚合物形成的第二部分，通过对嵌段共聚物膜进行微相分离处理。

公开(公告)号：US20170062229A1

公开(公告)日：2017-03-02

申请号：US15215016

申请日：2016-07-20

Applicant: The University of Chicago ,  Wisconsin Alumni Research Foundation

Inventor： Paul Franklin Nealey ,  Tzu-Hsuan Chang ,  Shisheng Xiong ,  Zhenqiang Ma ,  Michael Scott Arnold ,  Robert Jacobberger

IPC: H01L21/308 ,  H01J37/32 ,  C09D153/00 ,  C23C16/455

CPC classification number: G03F7/165 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/04 ,  C08L53/00 ,  C09D153/00 ,  C23C16/0227 ,  C23C16/26 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/168 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/3086

Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.

Abstract translation: 本文提供了关于原子层化学图案和相关组合物的定向自组装（DSA）的方法。 原子层化学图案可以由诸如石墨烯的二维材料形成。 原子层化学图案提供高分辨率，低缺陷指向的自组装。 例如，可以使用石墨烯图案上的DSA实现在三维图案（例如聚合物刷）上可实现的DSA的分辨率的十倍。 原子层化学图案上的嵌段共聚物的组装也可以促进随后的蚀刻，因为原子层化学图案比常规图案材料更容易蚀刻。

公开(公告)号：US09523917B2

公开(公告)日：2016-12-20

申请号：US15137819

申请日：2016-04-25

Applicant: SK hynix Inc.

Inventor： Keun Do Ban ,  Cheol Kyu Bok ,  Jung Gun Heo ,  Hong Ik Kim

IPC: G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  C09D153/00 ,  G03F7/11 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  C08F293/00 ,  C08L53/00

CPC classification number: G03F7/168 ,  C08F293/00 ,  C08L53/005 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/11 ,  G03F7/165 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.

Abstract translation: 形成图案的方法包括中性层上的引导图案。 引导图案和中性层上的自组装嵌段共聚物（BCP）层。 通过退火自组装BCP层，形成第一聚合物嵌段区域和第二聚合物嵌段区域。引导图案由可显影的抗反射材料形成。 中性层由交联的聚合物材料形成。

公开(公告)号：US20160276167A1

公开(公告)日：2016-09-22

申请号：US14808109

申请日：2015-07-24

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuriko SEINO

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/31138 ,  B81C1/00031 ,  B82Y40/00 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144

Abstract: According to one embodiment, a pattern formation method includes forming a resist pattern on an underlying film, slimming the resist pattern, forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film, forming a neutral, film having affinity for the first polymer and a second polymer on the underlying film after the etching, forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film, forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation.

Abstract translation: 根据一个实施例，图案形成方法包括在下面的膜上形成抗蚀剂图案，使抗蚀剂图案减薄，通过在薄的抗蚀剂图案的表面上沉积产生产生的蚀刻产物，形成对第一聚合物具有亲和性的钉扎部分 通过蚀刻下面的膜，在蚀刻之后形成对第一聚合物具有亲和力的中性膜和位于下面的膜上的第二聚合物，在钉扎部分上形成含有第一聚合物和第二聚合物的嵌段共聚物膜和中性膜 ，通过对嵌段共聚物膜施加预定的工艺来形成微相分离图案，进行微相分离。

公开(公告)号：US20160276149A1

公开(公告)日：2016-09-22

申请号：US15068833

申请日：2016-03-14

Applicant: Tokyo Electron Limited

Inventor： Jeffrey Smith

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/16

CPC classification number: G03F7/11 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/004 ,  G03F7/16 ,  G03F7/165 ,  G03F7/2059 ,  G03F7/26 ,  G03F7/265 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31058

Abstract: Techniques disclosed herein include methods for creating a directed self-assembly tunable neutral layer that works with multiple different block copolymer materials. Techniques herein can include depositing a neutral layer and then post-processing this neutral layer to tune its characteristics so that the neutral layer is compatible with a particular block copolymer scheme or schemes. Post-processing herein of such a neutral layer can modify a ratio of pi and sigma bonds in a given carbon film or other film to approximate a given self-assembly film that will be deposited on this neutral layer. Accordingly, a generic or single material can be used for a neutral layer and modified to match a given block copolymer to be deposited.

Abstract translation: 本文公开的技术包括用于产生与多种不同嵌段共聚物材料一起使用的定向自组装可调谐中性层的方法。 本文的技术可以包括沉积中性层，然后后处理该中性层以调节其特性，使得中性层与特定的嵌段共聚物方案或方案相容。 这种中性层的后处理可以改变给定碳膜或其它膜中的π和σ键的比例，以近似将沉积在该中性层上的给定自组装膜。 因此，通用或单一材料可以用于中性层并经修饰以匹配待沉积的给定嵌段共聚物。

公开(公告)号：US20160172187A1

公开(公告)日：2016-06-16

申请号：US14958072

申请日：2015-12-03

Applicant: Jeong-ju PARK ,  Seung-chul KWON ,  Eun-sung KIM ,  Jae-woo NAM ,  Shi-yong YI ,  Hyun-woo KIM

Inventor： Jeong-ju PARK ,  Seung-chul KWON ,  Eun-sung KIM ,  Jae-woo NAM ,  Shi-yong YI ,  Hyun-woo KIM

IPC: H01L21/027 ,  H01L21/311

CPC classification number: H01L21/31144 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/10855

Abstract: A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

Abstract translation: 形成精细图案的方法包括：形成规则排列在特征层上的柱状引导件，在柱状引导件周围的特征层上形成嵌段共聚物层，相分离嵌段共聚物层，形成规则排列在第 具有柱状引导件的特征层，在围绕柱状引导件和第一域的特征层上形成第二结构域，通过蚀刻特征层来去除第一区域并形成与特征层中的第一区域相对应的孔 使用柱形引导件和第二域作为蚀刻掩模。 嵌段共聚物层包括聚合物共混物，其具有分别具有第一和第二重复单元的第一和第二聚合物嵌段，第一均聚物和第二均聚物。 第一结构域包括第一聚合物嵌段和第一均聚物，第二结构域包括第二聚合物嵌段和第二均聚物。