-
公开(公告)号：US20170026021A1
公开(公告)日：2017-01-26
申请号：US15048744
申请日：2016-02-19
CPC分类号： H03H7/38 , H01F17/0006 , H01L21/702 , H01L23/642 , H01L23/645 , H03H7/0115 , H03H7/0153 , H03H7/1775 , H03H2007/386
摘要： A high performance integrated tunable impedance matching network with coupled merged inductors. Embodiments include a combination of merged multiport constructively coupled spiral inductors and tunable capacitors configured to reduce insertion losses, circuit size, and optimization time while maintaining a high Q factor for the coupled spiral inductors. Some embodiments integrate one or more filter circuits with a tunable impedance matching network, useful in conjunction with such applications as radio frequency power amplifiers.
摘要翻译： 具有耦合并联电感器的高性能集成可调谐阻抗匹配网络。 实施例包括合并的多端口构造耦合螺旋电感器和可调谐电容器的组合，其被配置为减小插入损耗，电路尺寸和优化时间，同时保持耦合的螺旋电感器的高Q因子。 一些实施例将一个或多个滤波器电路与可调谐阻抗匹配网络集成，这些应用与诸如射频功率放大器的应用相结合。
-
公开(公告)号：US20170324407A1
公开(公告)日：2017-11-09
申请号：US15597029
申请日：2017-05-16
发明人： Jianhua Lu , Peter Bacon , Raul Inocencio Alidio , Vikram Sekar
IPC分类号： H03K17/687 , H04B1/00 , H03K17/693 , H04B1/44 , H03K17/10
CPC分类号： H03K17/687 , H03K17/102 , H03K17/693 , H04B1/006 , H04B1/44
摘要： An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
-
公开(公告)号：US20180131368A1
公开(公告)日：2018-05-10
申请号：US15660675
申请日：2017-07-26
发明人： Jianhua Lu , Peter Bacon , Raul Inocencio Alidio , Vikram Sekar
IPC分类号： H03K17/687 , H04B1/00 , H03K17/693 , H04B1/44 , H03K17/10
CPC分类号： H03K17/687 , H03K17/102 , H03K17/693 , H04B1/006 , H04B1/44
摘要： An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
-
公开(公告)号：US09900004B2
公开(公告)日：2018-02-20
申请号：US15597029
申请日：2017-05-16
发明人： Jianhua Lu , Peter Bacon , Raul Inocencio Alidio , Vikram Sekar
IPC分类号： H03K17/687 , H03K17/10 , H03K17/693 , H04B1/44 , H04B1/00
CPC分类号： H03K17/687 , H03K17/102 , H03K17/693 , H04B1/006 , H04B1/44
摘要： An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
-
公开(公告)号：US09685946B2
公开(公告)日：2017-06-20
申请号：US14995023
申请日：2016-01-13
发明人： Jianhua Lu , Peter Bacon , Raul Inocencio Alidio , Vikram Sekar
IPC分类号： H03K17/687 , H03K17/10 , H03K17/693 , H04B1/44
CPC分类号： H03K17/687 , H03K17/102 , H03K17/693 , H04B1/006 , H04B1/44
摘要： An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
-
公开(公告)号：US20160226484A1
公开(公告)日：2016-08-04
申请号：US14995023
申请日：2016-01-13
发明人： Jianhua Lu , Peter Bacon , Raul Inocencio Alidio , Vikram Sekar
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H03K17/102 , H03K17/693 , H04B1/006 , H04B1/44
摘要： An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
摘要翻译： 一种具有分布式分流开关的射频开关装置，沿着传输线分布，以改善RF带宽以及器件的信号隔离。 分流开关可以物理地定位在传输线的两侧，以保持集成电路（IC）设计基本上对称，以便提供可预测和可靠的操作特性。 一些实施例包括堆叠的FET分流开关和串联开关以容忍高电压。 在一些实施例中，用于每个FET分流开关的栅极电阻器被分成两个或更多个部分。
-
公开(公告)号：US09831869B2
公开(公告)日：2017-11-28
申请号：US14610588
申请日：2015-01-30
发明人： Jianhua Lu , Peter Bacon , Raul Inocencio Alidio , Vikram Sekar
IPC分类号： H03K17/687 , H03K17/693 , H03K17/00 , H03K17/735
CPC分类号： H03K17/693 , H03K17/002 , H03K17/687 , H03K17/6871 , H03K17/735
摘要： An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
-
8.发明授权公开(公告)号：US09667217B2
公开(公告)日：2017-05-30
申请号：US14690212
申请日：2015-04-17
CPC分类号： H03H7/38 , H01F17/0006 , H03H2007/386
摘要： A high performance integrated tunable impedance matching network with coupled merged inductors. Embodiments include a combination of merged multiport constructively coupled spiral inductors and tunable capacitors configured to reduce insertion losses, circuit size, and optimization time while maintaining a high Q factor for the coupled spiral inductors.
-
9.发明申请High Performance Integrated Tunable Impedance Matching Network with Coupled Merged Inductors 有权具有耦合合并电感器的高性能集成可调阻抗匹配网络公开(公告)号：US20160308506A1
公开(公告)日：2016-10-20
申请号：US14690212
申请日：2015-04-17
CPC分类号： H03H7/38 , H01F17/0006 , H03H2007/386
摘要： A high performance integrated tunable impedance matching network with coupled merged inductors. Embodiments include a combination of merged multiport constructively coupled spiral inductors and tunable capacitors configured to reduce insertion losses, circuit size, and optimization time while maintaining a high Q factor for the coupled spiral inductors.
摘要翻译： 具有耦合并联电感器的高性能集成可调谐阻抗匹配网络。 实施例包括合并的多端口构造耦合螺旋电感器和可调谐电容器的组合，其被配置为减小插入损耗，电路尺寸和优化时间，同时保持耦合的螺旋电感器的高Q因子。
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.014 秒)
