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公开(公告)号：US06693322B2
公开(公告)日：2004-02-17
申请号：US10352731
申请日：2003-01-27
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/8083 , H01L29/8122 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor configuration for current control has an n-type first semiconductor region with a first surface, a p-type covered island region, within the first semiconductor region, with a second surface, an n-type contact region arranged on the second surface within the island region and a lateral channel region, formed between the first and second surface as part of the first semiconductor region. The channel is part of a current path from or to the contact region. The current within the lateral channel region may be influenced by at least one depletion zone. A lateral edge of the lateral channel region extends as far as the contact region.
摘要翻译： 用于电流控制的半导体配置具有在第一半导体区域内具有第一表面，p型覆盖岛状区域的n型第一半导体区域，第二表面，布置在第二表面上的第二表面上的n型接触区域 所述岛区域和横向沟道区域形成在所述第一和第二表面之间，作为所述第一半导体区域的一部分。 通道是从或接触区域的当前路径的一部分。 横向通道区域内的电流可能受到至少一个耗尽区的影响。 横向通道区域的横向边缘延伸到接触区域的最远处。
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公开(公告)号：US07206178B2
公开(公告)日：2007-04-17
申请号：US10450408
申请日：2001-12-03
IPC分类号： H02H3/00
CPC分类号： H03K17/08142 , H03K17/0828 , H03K2017/0806 , H03K2017/6875
摘要： A switching device includes a working circuit, to which an operating voltage can be or is applied to which has at least one electronic switching element. This switching element includes at least one control terminal for applying a switching signal and is switched off or switched on depending on the switching signal. At least one electronic protection element is for protecting the switching element in its switched state from excessive Joule losses in the event of danger, especially in the event of an overload or a short circuit. The protection element bears the predominant part of the operating voltage that is released at the working circuit. The switching device includes a switching-off device, which, in the event of danger, automatically switches the switching element to the switched off state, using the energy contained in the operating current or the operating voltage passing through the working circuit or the voltage that is released at the working circuit or at the protection element exceeds a predetermined upper limit value.
摘要翻译： 开关装置包括工作电路，工作电压可以施加到其上，具有至少一个电子开关元件。 该开关元件包括用于施加开关信号的至少一个控制端子，并且根据开关信号而被切断或接通。 至少有一个电子保护元件用于在开关状态下保护开关元件免受过度焦耳损失的危害，特别是在过载或短路的情况下。 保护元件是工作电路释放的工作电压的主要部分。 开关装置包括关断装置，在危险的情况下，使用包含在工作电流中的能量或通过工作电路的工作电压或开关元件的电压，将开关元件自动切换到关闭状态 在工作电路处或在保护元件处被释放超过预定的上限值。
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公开(公告)号：US07071503B2
公开(公告)日：2006-07-04
申请号：US10950027
申请日：2004-09-24
IPC分类号： H01L29/80
CPC分类号： H01L29/0619 , H01L29/8083
摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
摘要翻译： 用于控制和切换电流的半导体结构具有开关元件和边缘元件。 开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域 到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。 边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上 边缘区域。
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公开(公告)号：US07082020B2
公开(公告)日：2006-07-25
申请号：US10466472
申请日：2002-01-03
IPC分类号： H02H9/08
CPC分类号： H01L27/085 , H03K17/08128 , H03K17/08142 , H03K17/567 , Y10T307/865
摘要： A switching device includes at least one MOSFET switching element and at least one JFET protective element, which is connected electrically in series to the switching element and which limits the electric current to a maximum current (saturated current) and control elements, which increase the maximum current of the JFET protective element during the closing operation or in a time-delayed manner, at least in the temporal mean, to at least a higher value and subsequently reduce said maximum current to at least a lower value. The advantage of said switching device is that it allows higher starting or closing overcurrents, which are subsequently limited.
摘要翻译： 开关装置包括至少一个MOSFET开关元件和至少一个JFET保护元件，其与开关元件串联电连接并且将电流限制到最大电流（饱和电流）和控制元件，这增加了最大值 JFET保护元件的电流在闭合动作期间或以时间延迟的方式，至少在时间平均值中至少为较高值，并随后将所述最大电流减小到至少较低的值。 所述开关器件的优点在于其允许较高的起始或闭合过电流，其随后被限制。
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5.发明授权Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure 有权包括高掺杂导电沟道区的半导体结构和用于制造半导体结构的方法公开(公告)号：US07615802B2
公开(公告)日：2009-11-10
申请号：US10549784
申请日：2003-03-19
CPC分类号： H01L29/1608 , H01L29/0634 , H01L29/1025 , H01L29/1029 , H01L29/1033 , H01L29/66053 , H01L29/66068 , H01L29/7392 , H01L29/7722 , H01L29/7828 , H01L29/8083 , H01L29/8122
摘要： The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).
摘要翻译： 本发明涉及一种用于控制电流（I）的半导体结构，包括第一n导电半导体区域（2），在第一半导体区域（2）内延伸的电流路径和沟道区域（22）。 沟道区域（22）形成第一半导体区域（2）的一部分并且包括基极掺杂。 通道区域（22）中的电流（I）可以通过至少一个耗尽区（23,24）的影响。 沟道区（22）包含用于传导电流的n导电沟道区（225），所述后区具有比基底掺杂更高的掺杂水平。 导电沟道区域（225）通过离子注入在围绕沟道区域（22）的外延层（262）中产生。
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公开(公告)号：US07646026B2
公开(公告)日：2010-01-12
申请号：US12088298
申请日：2006-09-19
IPC分类号： H01L31/00 , H01L31/117
CPC分类号： H01L29/861 , H01L29/1608 , H01L29/36
摘要： An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.
摘要翻译： 集成的纵向SiC-PN功率二极管具有第一导电类型的高掺杂SiC半导体本体，第一导电类型的低掺杂漂移区，布置在发射极侧的半导体主体上方，具有第二导电性的发射极区 类型，施加到漂移区，以及至少一个第一导电类型的薄中间层。 中间层布置在漂移区内，具有比漂移区更高的掺杂浓度，并将漂移区分成至少一个第一阳极侧漂移区层和至少一个第二阴极侧漂移区层。 还公开了具有这种SiC-PN功率二极管的电路结构。
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7.发明授权Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure 失效具有预定的α-碳化硅区域的半导体结构以及该半导体结构的使用公开(公告)号：US06316791B1
公开(公告)日：2001-11-13
申请号：US09523158
申请日：2000-02-22
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor structure includes at least one &agr;-silicon carbide region and an electrically insulating region, e.g. made of an oxide layer, and an interface located between them. The selection of an &agr;-silicon carbide polytype having a smaller energy gap than that of the 6H silicon carbide polytype for at least one region near the interface results in a high charge carrier mobility in this region.
摘要翻译： 半导体结构包括至少一个α-碳化硅区域和电绝缘区域，例如， 由氧化物层制成，以及位于它们之间的界面。 对于界面附近的至少一个区域，具有比6H碳化硅多型体更小的能隙的α-碳化硅多型体的选择导致该区域中的高电荷载流子迁移率。
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8.发明授权Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration 有权具有欧姆接触连接的半导体结构和用于接触半导体配置的方法公开(公告)号：US06667495B2
公开(公告)日：2003-12-23
申请号：US09732989
申请日：2000-12-08
IPC分类号： H01L310312
CPC分类号： H01L29/45 , H01L21/0485 , H01L2924/0002 , Y10S438/931 , H01L2924/00
摘要： A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.
摘要翻译： 具有欧姆接触连接的半导体结构包括由碳化硅制成的第一和第二半导体区域，每个具有不同的导电类型。 第一和第二接触区域用于接触连接。 第一接触区域和第二接触区域具有至少大致相同的材料组成，其在相应的接触区域内几乎是均匀的。 提供了一种用于将n导电和p导电碳化硅接触连接的方法，在每种情况下具有至少大致相同的材料。
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公开(公告)号：US06815351B2
公开(公告)日：2004-11-09
申请号：US10384315
申请日：2003-03-07
IPC分类号： H01L2144
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/1608 , H01L29/7722 , H01L2924/0002 , Y10S438/931 , H01L2924/00
摘要： A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.
摘要翻译： 具有欧姆接触连接的半导体结构包括由碳化硅制成的p导电半导体区域。 p型接触区域用于接触连接。 p型接触区域由至少含有镍和铝的材料构成。 在整个p型接触区域中存在基本均匀的材料组成。 还提供了一种用于将导电碳化硅与至少含有镍和铝的材料接触连接的方法。 两个组分镍和铝同时施加在p导电半导体区域上。
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10.发明授权Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device 失效具有欧姆接触连接的半导体器件和用于半导体器件的欧姆接触连接的方法公开(公告)号：US06468890B2
公开(公告)日：2002-10-22
申请号：US09799866
申请日：2001-03-02
IPC分类号： H01L2144
CPC分类号： H01L29/808 , H01L21/0485 , H01L29/0634 , H01L29/0847 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L2924/0002 , H01L2924/00
摘要： The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having a first and a second material component. A silicide formed from the first material component and the silicon of the silicon carbide and a carbide formed from the second material component and the carbon of the silicon carbide are contained in a junction region between the semiconductor region and the ohmic contact layer. The silicide and carbide formation take place at maximum 1000° C.
摘要翻译： 所公开的半导体器件包括在由n导电碳化硅制成的半导体区域和大体均匀的欧姆接触层（110）之间的欧姆接触，其邻接半导体区域并且由具有第一和第二材料成分的材料制成。 由半导体区域和欧姆接触层之间的接合区域包含由第一材料成分和碳化硅的硅形成的硅化物和由第二材料成分形成的碳化物和碳化硅的碳。 硅化物和碳化物的形成发生在最大1000°C
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