公开(公告)号：US06878559B2

公开(公告)日：2005-04-12

申请号：US10253121

申请日：2002-09-23

申请人： Peter G. Borden ,  G. Jonathan Kluth ,  Eric Paton

发明人： Peter G. Borden ,  G. Jonathan Kluth ,  Eric Paton

IPC分类号： G01N21/21 ,  G01N21/84 ,  G01N21/95 ,  G01N21/956 ,  G01R31/311 ,  H01L23/544 ,  H01L21/66

CPC分类号： H01L22/34 ,  G01N21/21 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8416 ,  G01N2201/0691 ,  G01R31/311 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Any semiconductor wafer fabrication process may be changed to monitor lateral abruptness of doped layers as an additional step in the wafer fabrication process. In one embodiment, a test structure including one or more doped regions is formed in a production wafer (e.g. simultaneously with one or more transistors) and one or more dimension(s) of the test structure are measured, and used as an estimate of lateral abruptness in other doped regions in the wafer, e.g. in the simultaneously formed transistors. Doped regions in test structures can be located at regularly spaced intervals relative to one another, or alternatively may be located with varying spacings between adjacent doped regions. Alternatively or in addition, multiple test structures may be formed in a single wafer, with doped regions at regular spatial intervals in each test structure, while different test structures have different spatial intervals.

公开(公告)号：US06521501B1

公开(公告)日：2003-02-18

申请号：US09310170

申请日：1999-05-11

申请人： Jeff Erhardt ,  Bin Yu ,  G. Jonathan Kluth

发明人： Jeff Erhardt ,  Bin Yu ,  G. Jonathan Kluth

IPC分类号： H01L21336

CPC分类号： H01L29/6653 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L29/6659

摘要： A method of forming a CMOS structure, the method including the acts of: forming a gate structure over a substrate layer; forming a silicide layer over the substrate layer; forming shallow source/drain areas in the substrate layer; forming an oxide diffusion barrier layer over the structure; forming a metal absorption layer over the oxide diffusion barrier layer; and melting portions of the substrate layer directly overlying the shallow source/drain areas, thereby transforming the shallow source/drain areas into shallow source/drain regions. The act of melting includes the act of exposing the metal absorption layer to pulsed laser beams.

摘要翻译： 一种形成CMOS结构的方法，所述方法包括以下动作：在衬底层上形成栅极结构; 在衬底层上形成硅化物层; 在衬底层中形成浅的源极/漏极区域; 在所述结构上形成氧化物扩散阻挡层; 在所述氧化物扩散阻挡层上形成金属吸收层; 并且将衬底层的部分直接覆盖在浅源极/漏极区域上，从而将浅的源极/漏极区域变换成浅的源极/漏极区域。 熔化的行为包括将金属吸收层暴露于脉冲激光束的行为。