-
1.发明授权Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures 有权控制多晶硅层中的晶粒尺寸的方法和具有多晶硅结构的半导体器件公开(公告)号：US07247924B2
公开(公告)日：2007-07-24
申请号：US10695336
申请日：2003-10-28
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11 , H01L21/331 , H01L21/8222
CPC分类号： H01L29/6656 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/26506 , H01L21/26513 , H01L21/2652 , H01L29/0804 , H01L29/1083 , H01L29/4916 , H01L29/4925 , H01L29/66242 , H01L29/7375 , H01L29/7378 , Y10S257/914
摘要： A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
摘要翻译： 调制多晶硅层的晶粒尺寸的方法和用该方法制造的器件。 该方法包括在衬底上形成多晶硅层; 并且进行多晶硅粒度调制物质的离子注入到所述多晶硅层中，使得在进行预定退火之后所述注入的多晶硅层的平均所得晶粒尺寸高于或低于平均得到的晶粒尺寸， 在多晶硅层上执行相同的预定退火，而不需要多晶粒度调节物质离子注入。
-
2.发明授权Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure 有权控制多晶硅层中的晶粒尺寸的方法和具有多晶硅结构的半导体器件公开(公告)号：US07777302B2
公开(公告)日：2010-08-17
申请号：US11770993
申请日：2007-06-29
IPC分类号： H01L27/082
CPC分类号： H01L29/6656 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/26506 , H01L21/26513 , H01L21/2652 , H01L29/0804 , H01L29/1083 , H01L29/4916 , H01L29/4925 , H01L29/66242 , H01L29/7375 , H01L29/7378 , Y10S257/914
摘要： A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method includes forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
摘要翻译： 调制多晶硅层的晶粒尺寸的方法和用该方法制造的器件。 该方法包括在衬底上形成多晶硅层; 并且进行多晶硅粒度调制物质的离子注入到所述多晶硅层中，使得在进行预定退火之后所述注入的多晶硅层的平均所得晶粒尺寸高于或低于平均得到的晶粒尺寸， 在多晶硅层上执行相同的预定退火，而不需要多晶粒度调节物质离子注入。
-
3.发明授权Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures 有权控制多晶硅层中的晶粒尺寸的方法和具有多晶硅结构的半导体器件公开(公告)号：US06682992B2
公开(公告)日：2004-01-27
申请号：US10147270
申请日：2002-05-15
IPC分类号： H01L2120
CPC分类号： H01L29/6656 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/26506 , H01L21/26513 , H01L21/2652 , H01L29/0804 , H01L29/1083 , H01L29/4916 , H01L29/4925 , H01L29/66242 , H01L29/7375 , H01L29/7378 , Y10S257/914
摘要： A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
摘要翻译： 调制多晶硅层的晶粒尺寸的方法和用该方法制造的器件。 该方法包括在衬底上形成多晶硅层; 并且进行多晶硅粒度调制物质的离子注入到所述多晶硅层中，使得在进行预定退火之后所述注入的多晶硅层的平均所得晶粒尺寸高于或低于平均得到的晶粒尺寸， 在多晶硅层上执行相同的预定退火，而不需要多晶粒度调节物质离子注入。
-
4.发明申请METHOD OF CONTROLLING GRAIN SIZE IN A POLYSILICON LAYER AND IN SEMICONDUCTOR DEVICES HAVING POLYSILICON STRUCTURE 有权控制多晶硅层中晶粒尺寸的方法及具有多晶硅结构的半导体器件公开(公告)号：US20070284694A1
公开(公告)日：2007-12-13
申请号：US11770993
申请日：2007-06-29
申请人： Peter Geiss , Joseph Greco , Richard Kontra , Emily Lanning
发明人： Peter Geiss , Joseph Greco , Richard Kontra , Emily Lanning
IPC分类号： H01L21/8222 , H01L21/331
CPC分类号： H01L29/6656 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/26506 , H01L21/26513 , H01L21/2652 , H01L29/0804 , H01L29/1083 , H01L29/4916 , H01L29/4925 , H01L29/66242 , H01L29/7375 , H01L29/7378 , Y10S257/914
摘要： A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method includes forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
摘要翻译： 调制多晶硅层的晶粒尺寸的方法和用该方法制造的器件。 该方法包括在衬底上形成多晶硅层; 并且进行多晶硅粒度调制物质的离子注入到所述多晶硅层中，使得在进行预定退火之后所述注入的多晶硅层的平均所得晶粒尺寸高于或低于平均得到的晶粒尺寸， 在多晶硅层上执行相同的预定退火，而不需要多晶粒度调节物质离子注入。
-
-
-
搜索结果
4 条记录 (耗时 0.023 秒)
