摘要:
The present invention relates to novel substituted enaminocarbonyl compounds, to processes for their preparation and to their use for controlling animal pests, especially arthropods, in particular insects.
摘要:
The present invention relates to novel substituted enaminocarbonyl compounds, to processes for their preparation and to their use for controlling animal pests, especially arthropods, in particular insects.
摘要:
The invention relates to compounds of the formula (I) in which A1, A2, R1, R2, R3, R4, R5 and X are as defined in the description, to processes and intermediates for their preparation, and to their use for controlling pests.
摘要:
A payload data can be received. The payload data can be packaged into a first immutable secure container at a first secure system. A new block of a blockchain can be created. The new block of the block chain can be separate from the first secure system. The new block can include a proof of existence of the payload data.
摘要:
Crack stops for semiconductor devices, semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a barrier structure for a semiconductor device includes a plurality of substantially V-shaped regions. Each of the plurality of substantially V-shaped regions is disposed adjacent another of the plurality of substantially V-shaped regions.
摘要:
The present invention relates to combination vaccines and/or the combined use of immunogenic compositions for the treatment and/or prophylaxis of cattle against microbiological infections, wherein the infections are caused by M. bovis and at least one further cattle relevant pathogen. The combination vaccine as described herein comprises at least one M. bovis antigen, preferably the attenuated, avirulent M. bovis as provided herewith and one or more further immunologically active components effective for the treatment and/or prophylaxis of infections caused by a further pathogen of cattle.
摘要:
Crack stops for semiconductor devices, semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a barrier structure for a semiconductor device includes a plurality of substantially V-shaped regions. Each of the plurality of substantially V-shaped regions is disposed adjacent another of the plurality of substantially V-shaped regions.
摘要:
A system (1), a method and an operating unit (62) for the creation of mixed layers for pallets (81, 82, 83, 84) are disclosed. A storage (10) is provided in which at least two different pack types are stored on a plurality of pallets (81, 82, 83, 84), including a plurality of layers of homogenous packs. The packs are intermediately stored in a plurality of individual, parallel conveyors (301, 302, . . . 30N) in a homogenous state. Based on the input of a user (5) on a touch panel (62), the packs are supplied to a grouping table (50) via a supply conveyor (40) in a predetermined sequence. A controller (60) is associated with the system (1) so that, in the grouping table (50), individual different pack types are allocated to the predefined positions of the different pack types as a function of predefined positions of the different pack types in a layer pattern (14) of a layer (24) of a production pallet (12).
摘要:
In one embodiment, an integrated circuit includes a memory array having a plurality of capacitors for storing data of an initial state in the memory array in an initial state. The integrated circuit also includes circuitry for occasionally inverting the data stored by the plurality of capacitors and tracking whether the current state of the data stored by the plurality of capacitors corresponds to the initial state. The circuitry inverts the data read out of the memory array during a read operation when the current state of the data does not correspond to the initial state.
摘要:
A method of fabricating a semiconductor device including a metal interconnect structure with a conductive region formed in a first dielectric layer, and an overlying, low-k, dielectric layer. A via and trench are formed in a dual damascene structure in the overlying dielectric layer, the via aligned with the conductive region and the trench. A sacrificial liner to release organic residues is deposited in the via and over the upper surface of the wafer, over which an organic planarization layer is deposited. The organic planarization layer is removed with a dry plasma etch, followed by a wet clean to remove the sacrificial liner. A diffusion barrier to separate the conductive material from the dielectric layers is deposited over the dual damascene structure and over the upper surface of the wafer. A conductive structure is formed over the diffusion barrier and polished to form an even surface for further processing steps.