Abstract:
One embodiment of the present invention provides a system that associates an error in a layout with a cell. During operation, the system receives a layout which is designed to create a target feature with an intended shape. Next, the system determines an error in a critical dimension of the target feature. The system then identifies a cell in the layout based on the error's location in the layout, thereby associating the error with the cell. Note that associating errors with cells allows the errors to be summarized based on the associated cells, which can reduce the amount of time required to identify and fix the errors.
Abstract:
One embodiment of the present invention provides a system that associates an error in a layout with a cell. During operation, the system receives a layout which is designed to create a target feature with an intended shape. Next, the system determines an error in a critical dimension of the target feature. The system then identifies a cell in the layout based on the error's location in the layout, thereby associating the error with the cell. Note that associating errors with cells allows the errors to be summarized based on the associated cells, which can reduce the amount of time required to identify and fix the errors.
Abstract:
A method for forming an L-shaped spacer using a sacrificial organic top coating. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. In the preferred embodiment, the dielectric spacer layer comprises a silicon nitride layer or a silicon oxynitride layer. A sacrificial organic layer is formed on the dielectric spacer layer. The sacrificial organic layer and the dielectric spacer layer are anisotropically etched to form spacers comprising a triangle-shaped sacrificial organic structure and an L-shaped dielectric spacer. The triangle-shaped sacrificial organic structure is removed leaving an L-shaped dielectric spacer.