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39 条记录 (耗时 0.026 秒)

    Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies
    3.
    发明授权
    Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies 有权
    基于石墨烯的结构和方法，用于在微波和太赫兹频率处的宽带电磁辐射吸收

    公开(公告)号：US08610617B1

    公开(公告)日：2013-12-17

    申请号：US13530725

    申请日：2012-06-22

    申请人： Phaedon Avouris ,  Alberto V. Garcia ,  Chun-Yung Sung ,  Fengnian Xia ,  Hugen Yan

    发明人： Phaedon Avouris ,  Alberto V. Garcia ,  Chun-Yung Sung ,  Fengnian Xia ,  Hugen Yan

    IPC分类号： H01Q17/00

    CPC分类号： H01Q17/00

    摘要： Structures and methods for cloaking an object to electromagnetic radiation at the microwave and terahertz frequencies include disposing a plurality of graphene sheets about the object. Intermediate layers of a transparent dielectric material can be disposed between graphene sheets to optimize the performance. In other embodiments, the graphene can be formulated into a paint formulation or a fabric and applied to the object. The structures and methods absorb at least a portion of the electromagnetic radiation at the microwave and terabyte frequencies.

    摘要翻译： 将物体掩盖在微波和太赫兹频率处的电磁辐射的结构和方法包括在物体周围设置多个石墨烯片。 可以在石墨烯片之间设置透明介电材料的中间层以优化性能。 在其它实施方案中，石墨烯可以配制成涂料配方或织物并施加到物体上。 该结构和方法以微波和太字节频率吸收至少一部分电磁辐射。

    Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices
    9.
    发明授权
    Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices 有权
    利用有机缓冲层制造高性能碳纳米电子器件

    公开(公告)号：US08614141B2

    公开(公告)日：2013-12-24

    申请号：US13568324

    申请日：2012-08-07

    申请人： Phaedon Avouris ,  Damon B. Farmer ,  Fengnian Xia

    发明人： Phaedon Avouris ,  Damon B. Farmer ,  Fengnian Xia

    IPC分类号： H01L29/78

    CPC分类号： H01L29/4908 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78684

    摘要： A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.

    摘要翻译： 提供了一种用于纳米电子器件和器件的制造工艺。 通道材料沉积在基底上以形成通道。 源极金属触点和漏极金属触点沉积在沟道材料上，源极金属触点和漏极金属触点位于沟道材料的相对端上。 多羟基苯乙烯衍生物沉积在通道材料上。 顶栅氧化物沉积在聚合物层上。 顶栅极金属沉积在顶栅氧化物上。

    Utilization of Organic Buffer Layer to Fabricate High Performance Carbon Nanoelectronic Devices
    10.
    发明申请
    Utilization of Organic Buffer Layer to Fabricate High Performance Carbon Nanoelectronic Devices 有权
    利用有机缓冲层制造高性能碳纳米电子器件

    公开(公告)号：US20120298962A1

    公开(公告)日：2012-11-29

    申请号：US13568324

    申请日：2012-08-07

    申请人： Phaedon Avouris ,  Damon B. Farmer ,  Fengnian Xia

    发明人： Phaedon Avouris ,  Damon B. Farmer ,  Fengnian Xia

    IPC分类号： H01L29/78 ,  B82Y99/00

    CPC分类号： H01L29/4908 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78684

    摘要： A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.

    摘要翻译： 提供了一种用于纳米电子器件和器件的制造工艺。 通道材料沉积在基底上以形成通道。 源极金属触点和漏极金属触点沉积在沟道材料上，源极金属触点和漏极金属触点位于沟道材料的相对端上。 多羟基苯乙烯衍生物沉积在通道材料上。 顶栅氧化物沉积在聚合物层上。 顶栅极金属沉积在顶栅氧化物上。