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1.发明授权Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption 失效用于选择MRAM器件的各向异性轴角度以降低功耗的方法和结构公开(公告)号：US07102916B2
公开(公告)日：2006-09-05
申请号：US10710281
申请日：2004-06-30
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method for determining a desired anisotropy axis angle for a magnetic random access memory (MRAM) device includes selecting a plurality of initial values for the anisotropy axis angle and determining, for each selected initial value, a minimum thickness for at least one ferromagnetic layer of the MRAM device. The minimum thickness corresponds to a predefined activation energy of an individual cell within the MRAM device. For each selected value, a minimum applied magnetic field value in a wordline direction and a bitline direction of the MRAM device is also determined so as maintain the predefined activation energy. For each selected value, an applied power per bit value is calculated, wherein the desired anisotropy axis angle is the selected anisotropy axis angle corresponding to a minimum power per bit value.
摘要翻译： 一种用于确定磁性随机存取存储器（MRAM）装置的期望的各向异性轴角的方法包括：为各向异性轴角选择多个初始值，并为每个所选择的初始值确定至少一个铁磁层的最小厚度 MRAM设备。 最小厚度对应于MRAM设备内单个单元的预定激活能。 对于每个选择的值，还确定MRAM装置的字线方向和位线方向上的最小施加磁场值，以便维持预定的激活能量。 对于每个选择的值，计算每位值的施加功率，其中期望的各向异性轴角是对应于每位值的最小功率的所选各向异性轴角。
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公开(公告)号：US07477567B2
公开(公告)日：2009-01-13
申请号：US10615147
申请日：2003-07-08
IPC分类号： G11C8/00
CPC分类号： H01L27/222 , G11C7/04 , G11C11/16 , G11C11/1675 , H01L43/10
摘要： A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
摘要翻译： 提供一种包括具有可变磁区的存储单元的存储器存储装置。 可变磁性区域包括具有响应于温度变化的磁化状态的材料。 存储器存储装置还包括加热元件。 加热元件靠近存储单元，用于选择性地改变存储单元的可变磁区的温度。 通过加热元件加热存储单元，与通过直接施加电流来加热存储单元不同，在存储单元的制造中提供了更多的灵活性。
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公开(公告)号：US20080304353A1
公开(公告)日：2008-12-11
申请号：US10615147
申请日：2003-07-08
IPC分类号： G11C8/00
CPC分类号： H01L27/222 , G11C7/04 , G11C11/16 , G11C11/1675 , H01L43/10
摘要： A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
摘要翻译： 提供一种包括具有可变磁区的存储单元的存储器存储装置。 可变磁性区域包括具有响应于温度变化的磁化状态的材料。 存储器存储装置还包括加热元件。 加热元件靠近存储单元，用于选择性地改变存储单元的可变磁区的温度。 通过加热元件加热存储单元，与通过直接施加电流来加热存储单元不同，在存储单元的制造中提供了更多的灵活性。
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4.发明授权公开(公告)号：US06667897B1
公开(公告)日：2003-12-23
申请号：US10185659
申请日：2002-06-28
IPC分类号： G11C1122
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222
摘要： A magnetic tunnel junction device is provided that includes a free layer and a pinned layer separated by a barrier layer. According to the invention, the free layer includes a ferrimagnetic layer and an anti-parallel layer having a magnetic moment that is substantially anti-parallel to a magnetic moment of the ferrimagnetic layer at least within a predetermined temperature range of the magnetic tunnel junction device. A memory array that includes such a magnetic tunnel junction is also provided.
摘要翻译： 提供了一种磁性隧道结装置，其包括由阻挡层分隔的自由层和钉扎层。 根据本发明，自由层包括铁磁性层和抗平行层，其具有至少在磁性隧道结装置的预定温度范围内基本上与铁氧体层的磁矩平行的磁矩。 还提供了包括这种磁性隧道结的存储器阵列。
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公开(公告)号：US20090207653A1
公开(公告)日：2009-08-20
申请号：US12328401
申请日：2008-12-04
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： H01L27/222 , G11C7/04 , G11C11/16 , G11C11/1675 , H01L43/10
摘要： A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
摘要翻译： 提供一种包括具有可变磁区的存储单元的存储器存储装置。 可变磁性区域包括具有响应于温度变化的磁化状态的材料。 存储器存储装置还包括加热元件。 加热元件靠近存储单元，用于选择性地改变存储单元的可变磁区的温度。 通过加热元件加热存储单元，与通过直接施加电流来加热存储单元不同，在存储单元的制造中提供了更多的灵活性。
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公开(公告)号：US06724674B2
公开(公告)日：2004-04-20
申请号：US10128838
申请日：2002-04-23
IPC分类号： G11C704
CPC分类号： H01L27/222 , G11C7/04 , G11C11/16 , G11C11/1675 , H01L43/10
摘要： A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
摘要翻译： 提供一种包括具有可变磁区的存储单元的存储器存储装置。 可变磁性区域包括具有响应于温度变化的磁化状态的材料。 存储器存储装置还包括加热元件。 加热元件靠近存储单元，用于选择性地改变存储单元的可变磁区的温度。 通过加热元件加热存储单元，与通过直接施加电流来加热存储单元不同，在存储单元的制造中提供了更多的灵活性。
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公开(公告)号：US06623158B2
公开(公告)日：2003-09-23
申请号：US09882651
申请日：2001-06-15
IPC分类号： G01N2572
CPC分类号： G01B21/085 , G11B5/607 , G11B33/10 , G11B33/14 , G11B2005/0021
摘要： A method and apparatus for mapping the character and location of small surface variations on a planar surface. Energy in the form of pulses is supplied to an object in close proximity to the planar surface to thereby raise the temperature of the object and at part of the surface. A change in temperature of the object is detected when it is in proximity to the variation to define the location and character of the variation. By supplying the energy in the form of pulses, the size of the thermal signature produced in the planar surface is limited wherein a more accurate and more sensitive mapping method and apparatus are provided. The energy supply may be thermal energy or optical energy but preferably is electrical energy which heats a resistive element. Preferably, the object is a magnetoresistive head of a disk drive assembly and the surface may be that of a magnetic recording material. The change in temperature is detected by monitoring the resistance of the magnetoresistive coil of the head. It is preferred that the object be positioned with respect to the surface so that when that relative motion between the surface and the object occurs, the object does not contact the surface.
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公开(公告)号：US06538919B1
公开(公告)日：2003-03-25
申请号：US09708207
申请日：2000-11-08
IPC分类号： G11C1114
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/098 , H01F10/3281 , H01F10/3286
摘要： The use of ferrimagnetic materials is proposed for use in magnetic devices. Such magnetic devices include magnetic tunnel junctions (MTJ) which have at least two magnetic layers separated by an insulating barrier layer, wherein at least one of the two magnetic layers is ferrimagnetic. Such MTJ's are used in MRAM (magnetic random access memory) structures. Where the magnetic device is a magnetic sensor, it preferably includes a layer that comprises a ferrimagnetic material separated from another magnetic layer by a barrier layer and the magnetizations of the magnetic layer are oriented at an angle to one another.
摘要翻译： 提出使用铁磁材料用于磁性器件。 这种磁性装置包括具有由绝缘阻挡层隔开的至少两个磁性层的磁隧道结（MTJ），其中两个磁性层中的至少一个是亚铁磁性的。 这种MTJ用于MRAM（磁随机存取存储器）结构。 在磁性装置是磁性传感器的情况下，其优选地包括包含由阻挡层与另一个磁性层分离的铁磁材料的层，并且磁性层的磁化被定向成彼此成角度。
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公开(公告)号：US06385082B1
公开(公告)日：2002-05-07
申请号：US09708253
申请日：2000-11-08
IPC分类号： G11C1114
CPC分类号： G11C11/16 , G11C11/15 , G11C11/1675
摘要： It is important to ensure good selectivity of a single magnetic tunnel junction storage cell within a memory array without affecting nearby storage cells. For this purpose, this memory array of storage cells preferably comprises a) an array of electrically conducting bit lines and electrically conducting word lines which form intersections therebetween, b) a storage cell disposed at each of said intersections, each storage cell comprising at least one reversible magnetic region or layer characterized by a magnetization state which can be reversed by applying thereto a selected external magnetic field, said reversible magnetic layer comprising a material whose magnetization state is more easily reversed upon a change in the temperature thereof, and c) a temperature change generator for changing the temperature of said reversible magnetic layer of only a selected one of said array of storage cells at any moment. To select a cell, it is preferable to select a cell by using a brief pulse of tunnelling current between the intersecting bit and word lines at that cell in order to provide sufficient Joule heating to facilitate a change in the magnetization state of its reversible magnetic layer, which preferably comprises a ferrimagnetic material.
摘要翻译： 重要的是确保单个磁性隧道结储存单元在存储器阵列内的良好选择性，而不影响附近的存储单元。 为此，存储单元的该存储器阵列优选地包括：a）导电位线阵列和导电字线，其在它们之间形成相交; b）设置在每个所述相交处的存储单元，每个存储单元包括至少一个 可逆磁性区域或层，其特征在于通过向其施加选定的外部磁场可以反转的磁化状态，所述可逆磁性层包括其磁化状态在其温度变化时更容易反转的材料，以及c）温度 改变发生器，用于随时改变仅存储单元阵列中选定的一个所述可逆磁性层的温度。 为了选择单元，优选通过使用在该单元处的相交位和字线之间的隧道电流的简短脉冲来选择单元，以便提供足够的焦耳加热以促进其可逆磁性层的磁化状态的变化 ，其优选包含亚铁磁材料。
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10.发明授权Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory 有权具有垂直磁各向异性的磁性堆叠，用于自旋动量传递磁阻随机存取存储器公开(公告)号：US08866207B2
公开(公告)日：2014-10-21
申请号：US13602533
申请日：2012-09-04
CPC分类号： G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
摘要翻译： 磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 位于邻近自由层的绝缘隧道屏障; 具有不变磁化方向的磁性固定层，所述固定层邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间，其中所述自由层和所述固定层具有垂直的磁各向异性; 以及复合固定层中的一个或多个，所述复合固定层包括除尘层，间隔层和参考层; 合成反铁磁（SAF）固定层结构，SAF固定层结构包括位于固定层和第二固定磁性层之间的SAF间隔物; 和偶极子层，其中自由层位于偶极层和隧道势垒之间。
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