MULTI-SECTOR ANTENNA
    7.
    发明申请
    MULTI-SECTOR ANTENNA 审中-公开
    多部门天线

    公开(公告)号:US20100066622A1

    公开(公告)日:2010-03-18

    申请号:US12312797

    申请日:2007-11-29

    IPC分类号: H01Q13/10

    摘要: The present invention relates to a multi-sector antenna comprising N (N>1) planar antennas each constituted of a longitudinal radiation slot etched on a first substrate provided with a ground plane and supplied by an excitation line. The N first substrates are fixed on a second common substrate so that the radiation axis of each antenna is parallel to said second substrate, the N first substrates being interconnected around an axis perpendicular to the second substrate. The invention can be applied to high definition wireless cameras.

    摘要翻译: 本发明涉及一种包括N(N> 1)个平面天线的多扇形天线,每个天线均由在被设置有接地平面并由激励线提供的第一基板上被蚀刻的纵向辐射槽构成。 N个第一衬底固定在第二公共衬底上,使得每个天线的辐射轴平行于所述第二衬底,N个第一衬底围绕垂直于第二衬底的轴互相连接。 本发明可应用于高清无线摄像机。

    OMNIDIRECTIONAL VOLUMETRIC ANTENNA
    10.
    发明申请
    OMNIDIRECTIONAL VOLUMETRIC ANTENNA 审中-公开
    OMNIDIRECTIVE VOLUMETRIC ANTENNA

    公开(公告)号:US20120068903A1

    公开(公告)日:2012-03-22

    申请号:US12452003

    申请日:2008-06-04

    IPC分类号: H01Q9/28

    摘要: The invention relates to a wide-band omnidirectional antenna including at least a first conducting member and a second conducting member having a revolution symmetry about a common revolution axis and central openings, said members being arranged opposite each other, at least one member having a progressively flaring area, characterised in that it comprises a gap between the conducting members and a central coaxial excitation line so as to achieve a three-dimensional contactless transition between the coaxial excitation line and the conducting members and members for modifying the radiation pattern in the flaring area of the diode type for selectively radiating the gap depending on the on- or off-state of said diodes.

    摘要翻译: 本发明涉及一种宽带全向天线,其包括至少第一导电构件和第二导电构件,所述第一导电构件和第二导电构件具有围绕共同旋转轴线和中心开口的旋转对称性,所述构件彼此相对布置,至少一个构件具有逐渐地 扩口区域,其特征在于,其包括导电构件和中心同轴激励线之间的间隙,以实现同轴激励线与导电构件之间的三维非接触过渡,以及用于修改扩口区域中的辐射图案的构件 的二极管类型,用于根据所述二极管的导通或截止状态选择性地辐射间隙。