公开(公告)号：US5812361A

公开(公告)日：1998-09-22

申请号：US624988

申请日：1996-03-29

申请人： Phillip Lawrence Jones ,  Seyed Jafar Jafarian-Tehrani ,  Boris V. Atlas ,  David R-Chen Liu ,  Ken Edward Tokunaga ,  Ching-Hwa Chen

发明人： Phillip Lawrence Jones ,  Seyed Jafar Jafarian-Tehrani ,  Boris V. Atlas ,  David R-Chen Liu ,  Ken Edward Tokunaga ,  Ching-Hwa Chen

IPC分类号： H01L21/68 ,  B25J15/06 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck system having an electrostatic chuck for securely holding a wafer on a surface of the electrostatic chuck. The electrostatic chuck system comprises a wafer bias sensor coupled to a first portion of the electrostatic chuck for sensing an alternating current signal at the first portion. The wafer bias sensor outputs, responsive to the alternating current signal, a direct current voltage level representative of a direct current bias level of the wafer. The electrostatic chuck system further comprises a variable electrostatic chuck power supply coupled to the wafer bias sensor. The variable electrostatic chuck power supply provides a first potential level to the first portion of the electrostatic chuck. The first potential level is modified, responsive to the direct current voltage level, to substantially maintain a first predefined potential difference between the first portion of the electrostatic chuck and a first region of the wafer overlaying the first portion irrespective of a magnitude of the direct current bias level of the wafer.

摘要翻译： 一种具有用于将晶片牢固地保持在静电卡盘的表面上的静电卡盘的静电卡盘系统。 静电吸盘系统包括耦合到静电卡盘的第一部分的晶片偏置传感器，用于感测第一部分处的交流信号。 晶片偏置传感器响应于交流信号输出代表晶片的直流偏置电平的直流电压电平。 静电卡盘系统还包括耦合到晶片偏置传感器的可变静电卡盘电源。 可变静电卡盘电源为静电卡盘的第一部分提供第一电位电平。 响应于直流电压电平修改第一电位电平，以基本上保持静电卡盘的第一部分和覆盖第一部分的晶片的第一区域之间的第一预定电位差，而不管直流电流的大小 晶片的偏置电平。

公开(公告)号：US6017825A

公开(公告)日：2000-01-25

申请号：US624301

申请日：1996-03-29

申请人： Sung Ho Kim ,  David R-Chen Liu

发明人： Sung Ho Kim ,  David R-Chen Liu

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/3213

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32165 ,  H01L21/32136 ,  H01L21/32137

摘要： A method in a plasma processing system having a top electrode and a bottom electrode for etching through a portion of a selected layer of a layer stack of a wafer. The method includes the step of etching at least partially through the selected layer while providing a first radio frequency (RF) signal having a first RF frequency to the top electrode. The method further includes the step of providing a second RF signal having a second RF frequency lower than the first RF frequency to the bottom electrode.

摘要翻译： 一种等离子体处理系统中的方法，其具有顶部电极和底部电极，用于蚀刻晶片的层叠层的选定层的一部分。 该方法包括至少部分地蚀刻所选择的层，同时向顶部电极提供具有第一RF频率的第一射频（RF）信号的步骤。 该方法还包括向底部电极提供具有低于第一RF频率的第二RF频率的第二RF信号的步骤。