公开(公告)号：US11444696B2

公开(公告)日：2022-09-13

申请号：US14326364

申请日：2014-07-08

Applicant: PhotonIC International Pte. Ltd.

Inventor： Birendra Dutt ,  Ashok Kapoor ,  Weiwei Song ,  Raj Rajasekharan

IPC: H04B10/00 ,  H04B10/40 ,  H04B10/50 ,  H04J14/02 ,  G02B6/293 ,  H04B10/66 ,  G02B6/12 ,  G02B6/42 ,  G02B6/43 ,  G02F1/01 ,  G02F1/025 ,  H04B10/516

Abstract: Various embodiments of a micro-disc modulator as well as a silicon photonic device and an optoelectronic communication apparatus using the micro-disc modulator are described. In one aspect, a device includes a SOI substrate and a silicon photonic structure formed on a primary surface of the SOI substrate. The semiconductor substrate includes a silicon waveguide and a micro-disc modulator. The micro-disc modulator is adjacent to the silicon waveguide and has a top surface substantially parallel to the primary surface of the SOI substrate. The top surface of the micro-disc modulator includes one or more discontinuities therein. The micro-disc modulator may be a multi junction micro-disc modulator having two vertical p-n junctions with a single resonance frequency to achieve high-speed modulation and low-power consumption.

公开(公告)号：US20160013865A1

公开(公告)日：2016-01-14

申请号：US14326364

申请日：2014-07-08

Applicant: PhotonIC International Pte. Ltd.

Inventor： Birendra Dutt ,  Ashok Kapoor ,  Weiwei Song ,  Raj Rajasekharan

IPC: H04B10/40 ,  G02F1/01 ,  H04B10/50 ,  G02B6/43 ,  H04B10/516 ,  G02F1/025 ,  G02B6/42

CPC classification number: H04B10/40 ,  G02B6/12007 ,  G02B6/29341 ,  G02B6/4295 ,  G02B6/43 ,  G02F1/0147 ,  G02F1/025 ,  G02F2201/18 ,  G02F2202/105 ,  G02F2203/055 ,  G02F2203/15 ,  G02F2203/69 ,  H04B10/50 ,  H04B10/501 ,  H04B10/516 ,  H04B10/66 ,  H04J14/02

Abstract: Various embodiments of a micro-disc modulator as well as a silicon photonic device and an optoelectronic communication apparatus using the micro-disc modulator are described. In one aspect, a device includes a SOI substrate and a silicon photonic structure formed on a primary surface of the SOI substrate. The semiconductor substrate includes a silicon waveguide and a micro-disc modulator. The micro-disc modulator is adjacent to the silicon waveguide and has a top surface substantially parallel to the primary surface of the SOI substrate. The top surface of the micro-disc modulator includes one or more discontinuities therein. The micro-disc modulator may be a multi junction micro-disc modulator having two vertical p-n junctions with a single resonance frequency to achieve high-speed modulation and low-power consumption.

Abstract translation: 描述了微盘调制器以及硅光子器件和使用微盘调制器的光电通信装置的各种实施例。 在一个方面，一种器件包括形成在SOI衬底的主表面上的SOI衬底和硅光子结构。 半导体衬底包括硅波导和微盘调制器。 微盘调制器与硅波导相邻，并且具有基本上平行于SOI衬底的主表面的顶表面。 微盘调制器的顶表面包括其中的一个或多个不连续性。 微盘调制器可以是具有具有单个谐振频率的两个垂直p-n结的多结微盘调制器，以实现高速调制和低功耗。