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公开(公告)号：US06291352B1
公开(公告)日：2001-09-18
申请号：US09167819
申请日：1998-10-07
IPC分类号： H01L21311
CPC分类号： H01L23/5252 , H01L21/0332 , H01L21/31144 , H01L21/76802 , H01L21/76813 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Amorphous or polycrystalline silicon layers are sometimes used in the metallization steps of IC processes, for example as antireflex coatings or as etching stopper layers for etching back of tungsten. A problem is that such a layer cannot be provided by CVD or LPCVD on account of the high deposition temperature which is not compatible with standard Al metallizations. Other deposition techniques, such as sputtering or plasma CVD, often lead to a lesser material quality, a longer processing time per wafer, or a worse step covering. According to the invention, the layer is provided by CVD or LPCVD at a temperature below 500° C. under the addition of Ge. The GexSi1−x layer (8) thus obtained is found to have good properties as regards step covering, optical aspects, electrical aspects, and etching aspects, and is compatible with any Al metallization (6) already present.
摘要翻译： 有时在IC工艺的金属化步骤中使用无定形或多晶硅层，例如作为抗反射涂层或用于蚀刻钨的蚀刻停止层。 一个问题是，由于与标准Al金属化不兼容的高沉积温度，这种层不能通过CVD或LPCVD提供。 诸如溅射或等离子体CVD的其它沉积技术通常导致较小的材料质量，每个晶片的更长的处理时间或较差的步骤覆盖。 根据本发明，通过CVD或LPCVD在低于500℃的温度下，在Ge的添加下提供该层。 发现如此获得的GexSi1-x层（8）在步骤覆盖，光学方面，电学方面和蚀刻方面具有良好的性能，并且与已经存在的任何Al金属化（6）兼容。
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公开(公告)号：US06368763B2
公开(公告)日：2002-04-09
申请号：US09878981
申请日：2001-06-12
IPC分类号： G03F900
CPC分类号： G03F7/706 , G03F7/70241 , G03F7/70358 , Y10S430/143
摘要： Aberrations of an imaging system (PL) can be detected in an accurate and reliable way by imaging, by means of the imaging system, a circular phase structure (22) on a photoresist (PR), developing the resist and scanning it with a scanning detection device (SEM) which is coupled to an image processor (IP). The circular phase structure is imaged in a ring structure (25) and each type of aberration, like coma, astigmatism, three-point aberration, etc. causes a specific change in the shape of the inner contour (CI) and the outer contour (CE) of the ring and/or a change in the distance between these contours, so that the aberrations can be detected independently of each other. Each type of aberration is represented by a specific Fourier harmonic (Z-), which is composed of Zernike coefficients (Z-), each representing a specific lower or higher order sub-aberration. The new method enables to determine these sub-aberrations The new method may be used for measuring a projection system for a lithographic projection apparatus.
摘要翻译： 可以通过成像系统在光致抗蚀剂（PR）上成像圆形相结构（22），以准确和可靠的方式检测成像系统（PL）的像差，显影抗蚀剂并用扫描扫描 检测装置（SEM），其耦合到图像处理器（IP）。 圆形相结构以环形结构（25）成像，并且每种类型的像差（如昏迷，散光，三点像差等）导致内部轮廓（CI）和外部轮廓（CI）的形状的特定变化 CE）和/或这些轮廓之间的距离的变化，使得能够彼此独立地检测像差。 每种类型的像差由特定的傅立叶谐波（Z-）表示，其由Zernike系数（Z-）组成，每个代表特定的较低或更高阶的子像差。 新方法可以确定这些子像差新方法可用于测量光刻投影设备的投影系统。
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3.发明授权
公开(公告)号：US5866283A
公开(公告)日：1999-02-02
申请号：US929537
申请日：1997-09-15
IPC分类号： G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70558 , G03F7/20 , G03F7/70591
摘要： A method of monitoring a photolithographic process whereby a test pattern (4) is imaged a number of times side by side with the same radiant energy on a photoresist layer (1) provided on a surface (2) of a substrate (3), but in a series of different irradiation times, after which the photoresist is developed. The irradiation dose or "energy-to-clear" with which the photoresist becomes just soluble in developer can thus be ascertained. The radiant energy with which the test pattern is imaged on the photoresist is only a fraction here of the radiant energy available in the process itself for imaging patterns on photoresist which is to be monitored. The method is thus suitable for monitoring a photolithographic process in which pulsed laser radiation is used for the pattern irradiation. The energy-to-clear can be accurately determined also in these processes.
摘要翻译： 一种监测光刻工艺的方法，其中测试图案（4）在设置在基板（3）的表面（2）上的光致抗蚀剂层（1）上以相同的辐射能并排成像多次，但是 在一系列不同的照射时间之后，光致抗蚀剂被显影。 因此可以确定光致抗蚀剂刚刚溶于显影剂中的照射剂量或“能量到澄清”。 测试图案在光致抗蚀剂上成像的辐射能量仅在该过程本身中可用的辐射能的一部分，用于对待监测的光致抗蚀剂上的图案进行成像。 因此，该方法适用于监测其中脉冲激光辐射用于图案照射的光刻工艺。 在这些过程中也可以准确地确定能量清除。
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4.发明授权公开(公告)号：US06331368B2
公开(公告)日：2001-12-18
申请号：US09844122
申请日：2001-04-27
IPC分类号： G03F800
CPC分类号： G03F7/706 , G03F7/70241 , G03F7/70358
摘要： Aberrations of an imaging system (PL) can be detected in an accurate and reliable way by imaging, by means of the imaging system, a test object having circular phase structure (22) on a photoresist (PR), developing the resis and scanning it with a scanning detection device (SEM) which is coupled to an image processor (IP). The circular phase structure is imaged in a ring structure (25) and each of several possible aberrations, like coma, astigmatism, three-point aberration, etc. causes a specific change in the shape of the inner contour (CI) and the outer contour (CE) of the ring and/or a change in the distance between these contours, so that the aberrations can be detected independently of each other.
摘要翻译： 通过成像系统，在光致抗蚀剂（PR）上成像具有圆形相位结构（22）的测试对象，可以以准确和可靠的方式检测成像系统（PL）的像差，从而显影和扫描成像系统 具有耦合到图像处理器（IP）的扫描检测装置（SEM）。 圆形相结构被成像为环形结构（25），并且几个可能的像差中的每一个像昏迷，散光，三点像差等都导致内部轮廓（CI）和外部轮廓的形状的特定变化 （CE）和/或这些轮廓之间的距离的变化，使得可以彼此独立地检测像差。
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公开(公告)号：US06248486B1
公开(公告)日：2001-06-19
申请号：US09407532
申请日：1999-09-29
IPC分类号： G03F900
CPC分类号： G03F7/706 , G03F7/70241 , G03F7/70358
摘要： Aberrations of an imaging system can be detected in an accurate and reliable way by imaging, by means of the imaging system, a circular phase structure on a photoresist, developing the resist and scanning it with a scanning detection device which is coupled to an image processor. The circular phase structure is imaged in a ring structure and each of several possible aberrations, like coma, astigmatism, three-point aberration, etc. causes a specific change in the shape of the inner contour and the outer contour of the ring and/or a change in the distance between these contours, so that the aberrations can be detected independently of each other. The new method may be used for measuring a projection system for a lithographic projection apparatus.
摘要翻译： 可以以准确和可靠的方式检测成像系统的像差，通过成像系统在光致抗蚀剂上成像圆形相结构，显影抗蚀剂并用耦合到图像处理器的扫描检测装置进行扫描 。 圆形相结构以环形结构成像，并且几个可能的像差中的每一个像昏迷，散光，三点像差等都导致环的内部轮廓和外部轮廓的形状的特定变化和/或 这些轮廓之间的距离发生变化，从而彼此独立地检测像差。 该新方法可用于测量光刻投影装置的投影系统。
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