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1.发明授权Semiconductor device with an operating frequency larger than 50 MHz comprising a body composed of a soft ferrite material 失效工作频率大于50MHz的半导体器件包括由软铁氧体材料构成的主体公开(公告)号：US06323533B1
公开(公告)日：2001-11-27
申请号：US09556547
申请日：2000-04-24
IPC分类号： H01L2900
CPC分类号： H01F17/0006 , H01L27/08
摘要： A semiconductor device (1) with an operating frequency above 50 MHz comprises a body (2) composed of a soft ferrite material, which body (2) has a surface (3) to which a semiconductor element (4), a pattern of conductors (5,6) and a passive element in the form of a planar inductor (7) are fastened by means of a layer (8) of adhesive. In order to reduce the manufacturing costs of the semiconductor device without adversely affecting the performance of the semiconductor device performance, a soft ferrite material is applied having a ferromagnetic resonance frequency smaller than the operating frequency of the semiconductor device.
摘要翻译： 工作频率高于50MHz的半导体器件（1）包括由软铁氧体材料构成的主体（2），所述主体（2）具有与半导体元件（4）一起的表面（3），导体图案 （5,6）和平面电感器（7）形式的无源元件通过粘合剂层（8）固定。 为了降低半导体器件的制造成本而不会不利地影响半导体器件性能的性能，施加具有小于半导体器件的工作频率的铁磁共振频率的软铁氧体材料。
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2.发明授权Method of manufacturing a hybrid integrated circuit comprising a semiconductor element and a piezoelectric filter 有权包括半导体元件和压电滤波器的混合集成电路的制造方法公开(公告)号：US06379987B1
公开(公告)日：2002-04-30
申请号：US09790346
申请日：2001-02-21
申请人： Ronald Dekker , Wilhelmus Mathias Clemens Dolmans , Lukas Leyten , Henricus Godefridus Rafael Maas
发明人： Ronald Dekker , Wilhelmus Mathias Clemens Dolmans , Lukas Leyten , Henricus Godefridus Rafael Maas
IPC分类号： H01L2100
CPC分类号： H03H3/02 , H03H9/0542
摘要： A method of manufacturing a hybrid integrated circuit comprising a semiconductor element (1) and a piezoelectric filter (2), which are situated next to each other and connected to a carrier substrate (3). The semiconductor element comprises semiconductor regions (5, 6) which are formed in a silicon layer (13, 28); the piezoelectric filter comprises an acoustic resonator (8, 9, 10) which is situated on an acoustic reflector layer (7), which acoustic resonator comprises a layer of piezoelectric material (8), a first electrode (9) situated between the layer of piezoelectric material and the acoustic reflector layer, and a second electrode (10) which is situated on the opposite side of the piezoelectric layer and faces the first electrode. In the method, the semiconductor element is formed on the first side (11) of a silicon wafer (12, 25). On the same side of this wafer, also the layer of piezoelectric material and the first electrode are formed, after which the surface is covered with the acoustic reflector layer. Subsequently, an adhesive layer (22) is used to attach the structure thus formed with the acoustic reflector layer to the carrier substrate. Finally, at the location of the filter, silicon is removed from the second side of the wafer, and the comparatively thick acoustic reflector need not be patterned so that underlying features cannot be damaged during etching said reflector layer.
摘要翻译： 一种制造混合集成电路的方法，该混合集成电路包括彼此相邻并连接到载体衬底（3）的半导体元件（1）和压电滤波器（2）。 半导体元件包括形成在硅层（13,28）中的半导体区域（5,6）。 压电滤波器包括位于声反射器层（7）上的声共振器（8,9,10），该谐振器包括一层压电材料（8），第一电极（9）位于第 压电材料和声反射器层，以及位于压电层的相对侧并面向第一电极的第二电极（10）。 在该方法中，半导体元件形成在硅晶片（12,25）的第一侧（11）上。 在该晶片的同一侧，形成压电材料层和第一电极，此后，表面被声反射层覆盖。 随后，使用粘合剂层（22）将由此形成的结构与声反射器层附接到载体基板。 最后，在滤光器的位置处，从晶片的第二侧去除硅，并且不需要对比较厚的声反射器进行图案化，使得在蚀刻所述反射器层期间底层特征不会被损坏。
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公开(公告)号：US07206555B2
公开(公告)日：2007-04-17
申请号：US10523389
申请日：2003-06-27
摘要： The invention relates to an antenna diversity comprising a first and a second antenna element where the first antenna element is operated in an active mode whereas the second antenna element is operated in a parasitic mode. The present invention minimizes the amount of mismatch while still being able to maximize a predetermined signal quality criterion for the electromagnetic signal on the active path between the first antenna element and the transceiver. By providing a pre-selection unit 130 as well as a selection unit 140 for selecting an optimal adjustable impedance connected to the second antenna ensuring that the amount of said mismatch is below a predetermined threshold value and that simultaneously a predetermined quality criterion for the transceived electromagnetic signal is fulfilled best within the range determined by the allowable mismatch. The invention further relates to a method for operating such an antenna diversity.
摘要翻译： 本发明涉及包括第一和第二天线元件的天线分集，其中第一天线元件以活动模式操作，而第二天线元件以寄生模式操作。 本发明使失配量最小化，同时仍然能够使第一天线元件和收发器之间的有源路径上的电磁信号的预定信号质量标准最大化。 通过提供预选单元130以及用于选择连接到第二天线的最佳可调阻抗的选择单元140，确保所述失配的量低于预定阈值，并且同时确定用于收发电磁的预定质量标准 信号在由允许的不匹配确定的范围内是最佳的。 本发明还涉及一种用于操作这种天线分集的方法。
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公开(公告)号：US06917338B2
公开(公告)日：2005-07-12
申请号：US10497338
申请日：2002-11-26
CPC分类号： H04B7/0802 , H01Q3/24 , H01Q21/29 , H04B7/0602
摘要： The invention relates to an antenna diversity comprising a first and a second antenna element one of which is operated in an active mode whereas the other one of which is operated in a parasitic mode. It is the object of the present invention to further minimize the amount of mismatch by still being able to maximize a predetermined signal quality criterion for the electromagnetic signal on the active path between the active antenna and the transceiver. This object is solved by a switching unit 120 for either operating the first antenna element in the parasitic mode and simultaneously operating the second antenna element in the active mode or vice versa and by providing a pre-selection unit 130 as well as a selection unit 140 for selecting an optimal configuration for the antenna diversity ensuring that the amount of said mismatch is below a predetermined threshold value and that simultaneously a predetermined quality criterion for the transceived electromagnetic signal is fulfilled best. The antenna diversity further comprises a control unit 150 for adjusting said selected configuration. The invention further relates to a method for operating such an antenna diversity.
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