公开(公告)号：US07034409B2

公开(公告)日：2006-04-25

申请号：US10718887

申请日：2003-11-21

申请人： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

发明人： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

IPC分类号： H01L29/12

CPC分类号： H01L21/0234 ,  C23C16/325 ,  C23C16/401 ,  G03F7/16 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S257/914

摘要： A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

公开(公告)号：US06656837B2

公开(公告)日：2003-12-02

申请号：US09977008

申请日：2001-10-11

申请人： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

发明人： Ping Xu ,  Li-Qun Xia ,  Larry A. Dworkin ,  Mehul Naik

IPC分类号： H01L2144

CPC分类号： H01L21/0234 ,  C23C16/325 ,  C23C16/401 ,  G03F7/16 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  Y10S257/914

摘要： A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.