公开(公告)号：US09761494B2

公开(公告)日：2017-09-12

申请号：US13465885

申请日：2012-05-07

申请人： Po-Yu Chen ,  Wan-Hua Huang ,  Jing-Ying Chen ,  Kuo-Ming Wu

发明人： Po-Yu Chen ,  Wan-Hua Huang ,  Jing-Ying Chen ,  Kuo-Ming Wu

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L29/06 ,  H01L21/768

CPC分类号： H01L21/823425 ,  H01L21/76895 ,  H01L21/823475 ,  H01L29/0603 ,  H01L29/7833

摘要： A semiconductor structure includes a gate structure disposed on a substrate. At least one lightly doped region adjoins the gate structure in the substrate. The at least one lightly doped region has a first conductivity type. A source feature and a drain feature are on opposite sides of the gate structure in the substrate. The source feature and the drain feature have the first conductivity type. The source feature is in the at least one lightly doped region. A bulk pick-up region adjoins the source feature in the at least one lightly doped region. The bulk pick-up region has a second conductivity type.

公开(公告)号：US20090020826A1

公开(公告)日：2009-01-22

申请号：US11778525

申请日：2007-07-16

申请人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

发明人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

IPC分类号： H01L29/78

CPC分类号： H01L29/782 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402

摘要： A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.

摘要翻译： 半导体结构包括半导体衬底; 半导体衬底中的第一导电类型的第一阱区; 所述第一阱区域上的含金属层，其中所述含金属层和所述第一阱区形成肖特基势垒; 以及第一阱区中的第一导电类型的第一重掺杂区，其中第一重掺杂区与水分离金属层。

公开(公告)号：US08022446B2

公开(公告)日：2011-09-20

申请号：US11778525

申请日：2007-07-16

申请人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

发明人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

IPC分类号： H01L29/78

CPC分类号： H01L29/782 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402

摘要： A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.

摘要翻译： 半导体结构包括半导体衬底; 半导体衬底中的第一导电类型的第一阱区; 所述第一阱区域上的含金属层，其中所述含金属层和所述第一阱区形成肖特基势垒; 以及第一阱区中的第一导电类型的第一重掺杂区，其中第一重掺杂区与水分离金属层。