公开(公告)号：US09761494B2

公开(公告)日：2017-09-12

申请号：US13465885

申请日：2012-05-07

申请人： Po-Yu Chen ,  Wan-Hua Huang ,  Jing-Ying Chen ,  Kuo-Ming Wu

发明人： Po-Yu Chen ,  Wan-Hua Huang ,  Jing-Ying Chen ,  Kuo-Ming Wu

IPC分类号： H01L21/8234 ,  H01L29/78 ,  H01L29/06 ,  H01L21/768

CPC分类号： H01L21/823425 ,  H01L21/76895 ,  H01L21/823475 ,  H01L29/0603 ,  H01L29/7833

摘要： A semiconductor structure includes a gate structure disposed on a substrate. At least one lightly doped region adjoins the gate structure in the substrate. The at least one lightly doped region has a first conductivity type. A source feature and a drain feature are on opposite sides of the gate structure in the substrate. The source feature and the drain feature have the first conductivity type. The source feature is in the at least one lightly doped region. A bulk pick-up region adjoins the source feature in the at least one lightly doped region. The bulk pick-up region has a second conductivity type.

公开(公告)号：US08022446B2

公开(公告)日：2011-09-20

申请号：US11778525

申请日：2007-07-16

申请人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

发明人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

IPC分类号： H01L29/78

CPC分类号： H01L29/782 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402

摘要： A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.

摘要翻译： 半导体结构包括半导体衬底; 半导体衬底中的第一导电类型的第一阱区; 所述第一阱区域上的含金属层，其中所述含金属层和所述第一阱区形成肖特基势垒; 以及第一阱区中的第一导电类型的第一重掺杂区，其中第一重掺杂区与水分离金属层。

公开(公告)号：US20090020826A1

公开(公告)日：2009-01-22

申请号：US11778525

申请日：2007-07-16

申请人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

发明人： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

IPC分类号： H01L29/78

CPC分类号： H01L29/782 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402

摘要： A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.

摘要翻译： 半导体结构包括半导体衬底; 半导体衬底中的第一导电类型的第一阱区; 所述第一阱区域上的含金属层，其中所述含金属层和所述第一阱区形成肖特基势垒; 以及第一阱区中的第一导电类型的第一重掺杂区，其中第一重掺杂区与水分离金属层。

公开(公告)号：US08576786B2

公开(公告)日：2013-11-05

申请号：US12655515

申请日：2009-12-30

申请人： Pei-Kai Liao ,  Yu-Hao Chang ,  Kuo-Ming Wu

发明人： Pei-Kai Liao ,  Yu-Hao Chang ,  Kuo-Ming Wu

IPC分类号： H04W4/00

CPC分类号： H04L5/005 ,  H04L27/2601 ,  H04W56/0015 ,  H04W72/04

摘要： A hierarchical downlink (DL) synchronization channel (SCH) is provided for wireless OFDM/OFDMA systems. The SCH includes a Primary SCH (P-SCH) for carrying PA-Preambles used for coarse timing and frequency synchronization, and a Secondary SCH (S-SCH) for carrying SA-Preambles used for cell ID detection. The total time length occupied by P-SCH and S-SCH is equal to one OFDM symbol time length of a data channel, and S-SCH is located in front of P-SCH in each DL frame. A perfect multi-period time-domain structure is created and maintained in P-SCH to increase preciseness of frame boundary estimation. With overlapping deployment of macrocells and femtocells, a predefined SCH configuration scheme is provided to separate frequency subbands used for macrocells and femtocells such that interferences in S-SCH can be mitigated. In addition, a self-organized SCH configuration scheme is provided to allow more flexibility for femtocells to avoid or introduce interference in S-SCH.

摘要翻译： 为无线OFDM / OFDMA系统提供分层下行链路（DL）同步信道（SCH）。 SCH包括用于携带用于粗定时和频率同步的PA前导的主SCH（P-SCH）和用于携带用于小区ID检测的SA-前导的辅SCH（S-SCH）。 由P-SCH和S-SCH占用的总时间长度等于数据信道的一个OFDM符号时间长度，并且S-SCH位于每个DL帧中的P-SCH前面。 在P-SCH中创建并保持了完美的多周期时域结构，以增加帧边界估计的精确度。 通过宏单元和毫微微小区的重叠部署，提供预定义的SCH配置方案来分离用于宏小区和毫微微小区的频率子带，从而可以减轻S-SCH中的干扰。 另外，提供了自组织的SCH配置方案，以允许毫微微小区更灵活地避免或引入S-SCH中的干扰。

公开(公告)号：US08236642B2

公开(公告)日：2012-08-07

申请号：US12910591

申请日：2010-10-22

申请人： Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

发明人： Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

IPC分类号： H01L21/02

CPC分类号： H01L29/1083 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.

摘要翻译： 半导体结构包括半导体衬底; 从半导体衬底的顶表面延伸到半导体衬底中的n型桶，其中n型桶包括埋在半导体衬底中的底部; 在桶的底部设置p型掩埋层（PBL），其中p型掩埋层埋在半导体衬底中; 和高压n型金属氧化物半导体（HVNMOS）器件，并且在由n型槽的侧面包围的区域内。

公开(公告)号：US20100158163A1

公开(公告)日：2010-06-24

申请号：US12342044

申请日：2008-12-22

申请人： Kuo-Ming Wu ,  Wen-How Lee

发明人： Kuo-Ming Wu ,  Wen-How Lee

IPC分类号： H04L27/06

CPC分类号： H04L27/2647 ,  H04W64/006

摘要： A method for estimating the velocity of the Mobile Station (MS) in Orthogonal Frequency Divisional Multiplexing (OFDM)/Orthogonal Frequency Divisional Multiplexing Access (OFDMA) system is disclosed. First, the pilots in the preamble are received by MS and the pilots in a specified symbol of the specific zone are received by MS. An auto-correlation between the received pilots in preamble and the received pilots in the specified symbol of the specific zone is calculated. The auto-correlation is the calculated with frame by frame basis, and the average auto-correlation is calculated from number of frames. Once the average auto-correlation is obtained, the velocity of MS is estimated from predetermined function according to the obtained average auto-correction.

摘要翻译： 公开了一种在正交频分复用（OFDM）/正交频分复用接入（OFDMA）系统中估计移动台（MS）的速度的方法。 首先，前导码中的导频由MS接收，并且特定区域的指定符号中的导频由MS接收。 计算前导码中的接收到的导频与特定区域的指定符号中的接收到的导频之间的自相关。 自相关是逐帧计算的，平均自相关是根据帧数计算的。 一旦获得了平均自相关，则根据获得的平均自动校正从预定函数估计MS的速度。

公开(公告)号：US07602037B2

公开(公告)日：2009-10-13

申请号：US11692213

申请日：2007-03-28

申请人： Yi-Chun Lin ,  Chi-Chih Chen ,  Kuo-Ming Wu ,  Ruey-Hsin Liu

发明人： Yi-Chun Lin ,  Chi-Chih Chen ,  Kuo-Ming Wu ,  Ruey-Hsin Liu

IPC分类号： H01L27/088 ,  H01L29/06

CPC分类号： H01L29/7816 ,  H01L21/26586 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7835

摘要： An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite thereto, overlies the well region. Within the well region, a doped body region includes a channel region extending under a portion of the gate stack and a drift region is adjacent to the channel region. A drain region is within the drift region and spaced apart by a distance from the first side thereof and a source region is within the doped body region near the second side thereof. There is no P-N junction between the doped body region and the well region.

摘要翻译： 能够进行高压操作的半导体器件的示例性实施例包括其中具有阱区的衬底。 具有与其相对的第一侧和第二侧的栅极堆叠覆盖在阱区域上。 在阱区内，掺杂体区域包括在栅叠层的一部分下延伸的沟道区，漂移区与沟道区相邻。 漏极区域在漂移区域内并与其第一侧隔开距离，并且源极区域在其第二侧附近的掺杂体区域内。 在掺杂体区和阱区之间不存在P-N结。

公开(公告)号：US07564927B2

公开(公告)日：2009-07-21

申请号：US11162831

申请日：2005-09-25

申请人： Kuo-Ming Wu ,  Der-Zheng Liu

发明人： Kuo-Ming Wu ,  Der-Zheng Liu

IPC分类号： H04L27/00

CPC分类号： H04L27/2657 ,  H04L2027/0026

摘要： A band averaging circuit and a related method for estimating a carrier frequency offset are applied in a multi-band multi-carrier communication system. A packet of the multi-band multi-carrier communication system is transmitted via a plurality of carriers. The band averaging circuit includes a frequency offset estimation unit for generating a plurality of carrier frequency offset ratios corresponding to the carriers according to a received packet; and a frequency offset adjustment circuit coupled to the frequency offset estimation unit for calculating a weighted average carrier frequency offset ratio according to carrier frequency offset ratios and comparison results of the carrier frequency offset ratios, and also for calculating a carrier frequency offset of each carrier according to the weighted average carrier frequency offset ratio and a center frequency of the carrier.

摘要翻译： 用于估计载波频率偏移的频带平均电路和相关方法被应用在多频带多载波通信系统中。 经由多个载波发送多频带多载波通信系统的分组。 频带平均电路包括：频率偏移估计单元，用于根据接收的分组产生对应于载波的多个载波频率偏移比; 以及频率偏移调整电路，其耦合到所述频率偏移估计单元，用于根据载波频率偏移比和所述载波频率偏移比的比较结果计算加权平均载波频率偏移比，并且还用于根据载波频率偏移比来计算每个载波的载波频率偏移 加权平均载波频率偏移比和载波的中心频率。

公开(公告)号：US20070127607A1

公开(公告)日：2007-06-07

申请号：US11465452

申请日：2006-08-18

申请人： Kuo-Ming Wu ,  Der-Zheng Liu ,  Kuang-Yu Yen

发明人： Kuo-Ming Wu ,  Der-Zheng Liu ,  Kuang-Yu Yen

IPC分类号： H04L27/06

CPC分类号： H04L27/2662 ,  H04B1/7183 ,  H04L27/2675

摘要： The present invention relates to a symbol acquisition apparatus and a method thereof. The method includes: determining a first boundary according to a first preamble symbol and generating a first confidence value according to signal quality of the first preamble symbol; determining a second boundary according to a second preamble symbol and generating a second confidence value according to signal quality of the second preamble symbol; and determining a symbol boundary from the first and the second boundaries according to the first and the second confidence values.

摘要翻译： 符号获取装置及其方法技术领域本发明涉及符号获取装置及其方法。 该方法包括：根据第一前导码符号确定第一边界，并根据第一前导符号的信号质量产生第一置信度值; 根据第二前导码符号确定第二边界，并根据第二前导符号的信号质量产生第二置信度值; 以及根据第一和第二置信度从第一边界和第二边界确定符号边界。

公开(公告)号：US07177377B2

公开(公告)日：2007-02-13

申请号：US10463143

申请日：2003-06-17

申请人： Kuo-Ming Wu ,  Hung-Kun Chen ,  Mao-Ching Chiu ,  Jui-Hsi Cheng

发明人： Kuo-Ming Wu ,  Hung-Kun Chen ,  Mao-Ching Chiu ,  Jui-Hsi Cheng

IPC分类号： H04B14/06

CPC分类号： C30B25/18 ,  H04L27/0014 ,  H04L2027/0065

摘要： An avoidance method for co-channel interference in a wireless network. The first step of the method is to evaluate an interference measure on each subcarrier. Based on the interference measure of each subcarrier, a peak-to-average measure ratio of interference within the received symbol is then obtained. If the peak-to-average measure ratio of interference is greater than a predetermined threshold, a most interfered subcarrier at which the maximal interference measure occurs is detected. Accordingly, a downgrading factor is set for the most interfered subcarrier.

摘要翻译： 一种用于无线网络中同信道干扰的回避方法。 该方法的第一步是评估每个子载波的干扰测量。 基于每个子载波的干扰测量，然后获得接收符号内的干扰的峰均平均测量比。 如果干扰的峰均平均测量比大于预定阈值，则检测发生最大干扰测量的最受干扰的子载波。 因此，对最受干扰的子载波设置降级因子。