公开(公告)号：US20230209994A1

公开(公告)日：2023-06-29

申请号：US18086797

申请日：2022-12-22

Applicant: Samsung Display Co., Ltd. ,  Postech Research And Business Development Foundation

Inventor： Hyungjun Kim ,  Yongyoung Noh ,  Junhyung Lim ,  Huihui Zhu

IPC: H10K85/50 ,  H10K59/125 ,  H10K71/10

CPC classification number: H10K85/50 ,  H10K59/125 ,  H10K71/10 ,  H10K10/462

Abstract: A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1:


[A]2[B][X]6:Z  Formula 1



wherein, in Formula 1,
A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof,
B includes Sn4+,
X includes a monovalent anion, and
Z includes a metal cation or a metalloid cation.

公开(公告)号：US20240128421A1

公开(公告)日：2024-04-18

申请号：US18364399

申请日：2023-08-02

Applicant: Samsung Display Co., Ltd. ,  Postech Research And Business Development Foundation

Inventor： Hyungjun Kim ,  Yongyoung Noh ,  Junhyung Lim ,  Ao Liu

IPC: H01L33/62 ,  H01L25/16 ,  H01L29/18 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L29/185 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78696 ,  H01L2933/0066

Abstract: A display device includes: a substrate; a thin-film transistor on the substrate; and a light-emitting diode electrically connected to the thin-film transistor, wherein the thin-film transistor includes: a semiconductor layer in which a source region, a drain region, and a channel region are defined; a gate electrode insulated from the semiconductor layer and overlapping the semiconductor layer; a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region, wherein the semiconductor layer includes a crystallized metal chalcogenide including a transition metal and a chalcogen element and has a layered structure.

公开(公告)号：US11335399B2

公开(公告)日：2022-05-17

申请号：US17011929

申请日：2020-09-03

Applicant: Postech Research and Business Development Foundation

Inventor： Jinseok Kim ,  Yulhwa Kim ,  Jae-Joon Kim ,  Hyungjun Kim

IPC: G11C11/41 ,  G06N3/08 ,  G11C11/412 ,  G11C11/418 ,  G11C11/419

Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.