公开(公告)号：US20160111343A1

公开(公告)日：2016-04-21

申请号：US14693857

申请日：2015-04-22

申请人： Powerchip Technology Corporation

发明人： Ming-Chen Lu ,  Chia-Ming Wu

IPC分类号： H01L21/66 ,  H01L29/06 ,  H01L21/311 ,  H01L29/66

CPC分类号： H01L22/20 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/66795 ,  H01L29/66825

摘要： A method of fabricating a flash memory includes providing a fin structure. The fin structure includes a floating gate material, an oxide layer and a semiconductive layer. An insulating layer is disposed at two sides of the fin structure. Then, a dielectric layer conformally covers the floating gate material and insulating layer. Later, a patterned first mask layer, a patterned second mask layer, and a control gate are stacked on the dielectric layer from bottom to top. The control gate crosses at least one fin structure. Next, at least one isotropic etching step is performed to entirely remove the exposed dielectric layer.

摘要翻译： 制造闪速存储器的方法包括提供翅片结构。 翅片结构包括浮栅材料，氧化物层和半导体层。 绝缘层设置在翅片结构的两侧。 然后，电介质层共形地覆盖浮栅材料和绝缘层。 之后，从底部到顶部，在电介质层上层叠图案化的第一掩模层，图案化的第二掩模层和控制栅极。 控制门跨越至少一个鳍结构。 接下来，执行至少一个各向同性蚀刻步骤以完全去除暴露的介电层。

公开(公告)号：US20180254316A1

公开(公告)日：2018-09-06

申请号：US15622080

申请日：2017-06-14

申请人： Powerchip Technology Corporation

发明人： Hsin Tai ,  Po-Cheng Chang ,  Hui-Chin Huang ,  Pei-Ting Tou ,  Ming-Chen Lu

IPC分类号： H01L49/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L28/60 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/32136

摘要： The invention provides a manufacturing method of a metal-insulator-metal device, including: forming a first metal layer, an insulation layer, and a second metal layer sequentially on a base to form a metal-insulator-metal structure; forming a patterned mask layer on at least a portion of the second metal layer, etching the second metal layer and the insulation layer on which the patterned mask layer is not formed using an etchant without carbon; and cleaning the etched metal-insulator-metal structure using a mixed solution containing oxidants and metal oxide etchants to remove excess polymer remaining on the metal-insulator-metal structure.

公开(公告)号：US09318396B1

公开(公告)日：2016-04-19

申请号：US14693857

申请日：2015-04-22

申请人： Powerchip Technology Corporation

发明人： Ming-Chen Lu ,  Chia-Ming Wu

IPC分类号： H01L27/115 ,  H01L21/66 ,  H01L29/66 ,  H01L29/06 ,  H01L21/311

CPC分类号： H01L22/20 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/66795 ,  H01L29/66825

摘要： A method of fabricating a flash memory includes providing a fin structure. The fin structure includes a floating gate material, an oxide layer and a semiconductive layer. An insulating layer is disposed at two sides of the fin structure. Then, a dielectric layer conformally covers the floating gate material and insulating layer. Later, a patterned first mask layer, a patterned second mask layer, and a control gate are stacked on the dielectric layer from bottom to top. The control gate crosses at least one fin structure. Next, at least one isotropic etching step is performed to entirely remove the exposed dielectric layer.

摘要翻译： 制造闪速存储器的方法包括提供翅片结构。 翅片结构包括浮栅材料，氧化物层和半导体层。 绝缘层设置在翅片结构的两侧。 然后，电介质层共形地覆盖浮栅材料和绝缘层。 之后，从底部到顶部，在电介质层上层叠图案化的第一掩模层，图案化的第二掩模层和控制栅极。 控制门跨越至少一个鳍结构。 接下来，执行至少一个各向同性蚀刻步骤以完全去除暴露的介电层。